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The resistive switching effect of various materials has been investigated because of their promising advantages such as high scalability, low cost, simple structure and less power consumption of such memory devices. In this study, the resistive switching effect in nanocomposites of zinc oxide nanowires (ZnO NWs) and zinc stannate nanocubes (ZnSnO3 NCs) has been explored. The device was fabricated on a flexible poly(ethylene terephthalate) substrate on which highly conductive (0.3 Ω cm) patterns of silver (Ag) were deposited as bottom electrodes using a reverse offset printing technique. Vertically aligned and highly dense ZnO NWs were grown on the Ag patterns using hydrothermal synthesis followed by spraying of ZnSnO3 NCs using an electrohydrodynamic atomization (EHDA) technique. Finally, the top Ag electrode was patterned using an EHD patterning technique to complete the fabrication of the device. The fabricated device exhibited bipolar and rewritable characteristics, and had a nonvolatile resistive switching memory with an off/on ratio of 5.8 × 102 and a retention time of 104 s at a small operating voltage (1.2 V). The electrical results obtained with the Ag–ZnO/ZnSnO3–Ag memory device were remarkable and they showed significant repeatability. The significantly stable, highly durable and promising results obtained with the ZnO NWs–ZnSnO3 NCs heterostructure make this semiconductive nanocomposite a potential candidate for use in future flexible memory devices. [ABSTRACT FROM AUTHOR]

Organic–inorganic hybrid nanocomposites are an attractive choice for various electronic device applications. Owing to the unique characteristics of hybrid nanocomposites, we have explored the memory effect in a device, based on a 2D material: boron nitride (BN) and a polymer, polyvinyl alcohol (PVOH). This memory device has been fabricated on a flexible ITO coated PET substrate by using an all printed approach including electrohydrodynamic atomization (EHDA) and reciprocating head (RPC). The fabricated device displayed nonvolatile, rewritable and characteristic bipolar resistive switching at a low current compliance and small operating voltage. The conduction mechanism was deduced to be conductive filamentary and verified by the effect of temperature and device size on switching characteristics. Raman, FTIR and UV/Vis spectroscopies were employed in studying the optical properties of as-deposited hBN/PVOH thin films. The morphological characteristics were analyzed by FESEM and AFM techniques. A bendability test at various bending diameters (50–4 mm) for 1500 cycles was carried out to show the mechanical robustness of the fabricated device. The remarkably stable and repeatable results of electrical and mechanical characterization make this hybrid nanocomposite a potential candidate for future flexible, robust and low power nonvolatile memory devices. [ABSTRACT FROM AUTHOR]