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The authors would like to correct the author list in ref. 17 of the published article. The amended citation details are as shown in ref. 1 below. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

The authors would like to correct the author list in ref. 17 of the published article. The amended citation details are as shown in ref. 1 below. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

Cu-Zn disorder is known to deeply affect kesterite (Cu2ZnSnS4, CZTS) due to the low temperature order-disorder phase transition, leading to a random occupation of the two cations in the shared crystallographic planes. This defect complex has been extensively studied in the thin film photovoltaic sector, with considerable efforts in developing methods to quantify disorder. In this study, a preliminary investigation of thermoelectric properties in temperature for thin film CZTS is presented. It is found that Cu-Zn disorder enhances both electrical conductivity and Seebeck coefficient. This can positively affect the thermoelectric performance, showing a mechanism of potential interest for a broad class of quaternary chalcogenides. The order-disorder transition is clearly visible in the electronic properties. This feature is repeatable, with samples from different preparations and groups showing consistent results, qualitatively suggesting electronic measurements as possible methods to quantify disorder. Furthermore, the reversibility of the transition allows the electronic properties to be tuned via specific thermal treatments, pointing to interesting applications in tunable electronics.

High kinetic energy impacts between inorganic surfaces and molecular beams seeded by organics represent a fundamental tool in materials science, particularly when they activate chemical-physical processes leading to nanocrystals' growth. Here we demonstrate single-layer graphene synthesis on copper by C60 supersonic molecular beam (SuMBE) epitaxy. A growth temperature down to 645°C, lower than that typical of chemical vapour deposition (1000°C), is achieved by thermal decomposition of C60 with the possibility of further reduction. Using a variety of electron spectroscopy and microscopy techniques, and first-principles simulations, we describe the chemical-physical mechanisms activated by SuMBE and assisted by thermal processes, resulting in graphene growth. In particular, we find a role of high kinetic energy deposition in enhancing the organic/inorganic interface interaction and controlling the fullerene cage openings. These results, while discussed in the specific case of graphene on copper, are potentially extendible to different metallic or semiconductor substrates and where lower processing temperature is desirable.