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Magnetoelectric multiferroics hold great promise for the development of new sustainable memory devices. However, practical applications of many existing multiferroic materials are infeasible due to the weak nature of the coupling between the magnetic and electrical orderings, meaning new magnetoelectric multiferroics featuring intrinsic coupling between their component orderings are sought instead. Here, we apply a symmetry-informed design approach to identify and realize the new manganite perovskite CeBaMn2O6 in which magnetoelectric coupling can be achieved via an intermediary non-polar structural distortion. Through first-principles calculations, we demonstrate that our chosen prototype system contains the required ingredients to achieve the desired magnetoelectric coupling. Using high-pressure/high-temperature synthesis conditions, we have been able to synthesize the CeBaMn2O6 perovskite system for the first time. Our subsequent neutron and electron diffraction measurements reveal that the desired symmetry-breaking ingredients exist in this system on a nanoscopic length scale, enabling magnetoelectric nanoregions to emerge within the material. Through this work, we showcase the potential of the new CeBaMn2O6 perovskite material as a promising system in which to realize strong magnetoelectric coupling, highlighting the potential of our symmetry-informed design approach in the pursuit of new magnetoelectric multiferroics for next-generation memory devices. [ABSTRACT FROM AUTHOR]

It has been realized lately that disorder, primarily in the form of oxygen vacancies, cation stoichiometry, atomic inter-diffusion and antisite defects, has a major effect on the electronic and transport properties of a 2D electron liquid at oxide hetero-interfaces – the first and the last being the two key players. In order to delineate the roles of these two key factors, we have investigated the effect of oxygen vacancies on the antisite disorder at a large number of interfaces separating two La-based transition metal oxides, using density functional theory. The oxygen vacancy is found to suppress antisite disorder in some heterostructures thereby stabilizing the ordered structure, while in some others, it tends to favor disorder, opening up the possibility of using it to control the order. Our calculations show that the oxygen vacancy offers an opportunity to generate new magnetic states by manipulating the inter-site coupling. Moreover, it can be used to control the electrical transport. The oxygen vacancy and antisite disorder are intrinsic to oxide heterostructures and it is therefore incumbent to engineer the latter and tune the magnetic and transport properties by controlling the oxygen partial pressure during growth. [ABSTRACT FROM AUTHOR]