Search

A terahertz (THz) photomixer: (i) a meander type antenna with integrated nanoelectrodes on (ii) a low temperature grown GaAs has been fabricated and characterized. It was designed for spectral range of 0.3-0.4 THz where molecular fingerprinting and sensing are performed. By combination of electron beam lithography with post-processing using focused ion beam (FIB), milling the THz emitter was successfully fabricated. Nanogaps as small as 40 nm width in the active area of photomixer were milled by FIB. Nanocontacts enhance electric fields of the illuminated and THz radiation and contribute to a better collection of photo-electrons. THz emission was obtained and spectrally characterized.

A terahertz (THz) photomixer: (i) a meander type antenna with integrated nanoelectrodes on (ii) a low temperature grown GaAs has been fabricated and characterized. It was designed for spectral range of 0.3-0.4 THz where molecular fingerprinting and sensing are performed. By combination of electron beam lithography with post-processing using focused ion beam (FIB), milling the THz emitter was successfully fabricated. Nanogaps as small as 40 nm width in the active area of photomixer were milled by FIB. Nanocontacts enhance electric fields of the illuminated and THz radiation and contribute to a better collection of photo-electrons. THz emission was obtained and spectrally characterized.

A terahertz (THz or T-rays) photomixer consisting of a meander type antenna with integrated nanoelectrodes on a low temperature grown GaAs (LT-GaAs) is demonstrated. The antenna was designed for molecular fingerprinting and sensing applications within a spectral range of 0.3-0.4 THz. A combination of electron beam lithography (EBL) and focused ion beam (FIB) milling was used to fabricate the T-ray emitter. Antenna and nanoelectrodes were fabricated by standard EBL and lift-off steps. Then a 40-nm-wide gap in an active photomixer area separating the nanoelectrodes was milled by a FIB. The integrated nano-contacts with nano-gaps enhance the illuminated light and THz electric fields as well as contribute to a better collection of photo-generated electrons. T-ray emission power from the fabricated photomixer chips were few hundreds of nanowatts at around 0.15 THz and tens of nanowatts in the 0.3-0.4 THz range.

A terahertz (THz or T-rays) photomixer consisting of a meander type antenna with integrated nanoelectrodes on a low temperature grown GaAs (LT-GaAs) is demonstrated. The antenna was designed for molecular fingerprinting and sensing applications within a spectral range of 0.3-0.4 THz. A combination of electron beam lithography (EBL) and focused ion beam (FIB) milling was used to fabricate the T-ray emitter. Antenna and nanoelectrodes were fabricated by standard EBL and lift-off steps. Then a 40-nm-wide gap in an active photomixer area separating the nanoelectrodes was milled by a FIB. The integrated nano-contacts with nano-gaps enhance the illuminated light and THz electric fields as well as contribute to a better collection of photo-generated electrons. T-ray emission power from the fabricated photomixer chips were few hundreds of nanowatts at around 0.15 THz and tens of nanowatts in the 0.3-0.4 THz range.