54 results on '"Zavarin, E. E."'
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2. The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE
3. Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells
4. Insulating GaN Epilayers Co-Doped with Iron and Carbon
5. Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
6. The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
7. Theoretical and experimental studies of the current–voltage and capacitance–voltage of HEMT structures and field-effect transistors
8. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
9. Specific features of proton interaction with transistor structures having a 2D AlGaN/GaN channel
10. effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
11. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
12. Elastic strains and delocalized optical phonons in AlN/GaN superlattices
13. The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial
14. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
15. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
16. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
17. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
18. The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy
19. MOVPE of III-N LED structures with short technological process
20. Optical lattices of excitons in InGaN/GaN quantum well systems
21. Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers
22. X-ray diffraction study of short-period AlN/GaN superlattices
23. Resonance Bragg structure with double InGaN quantum wells
24. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
25. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
26. InGaN/GaN heterostructures grown by submonolayer deposition
27. Monolithic white LEDs: Approaches, technology, design
28. Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide
29. Double-cross epitaxial overgrowth of nonpolar gallium nitride layers
30. Specific features of gallium nitride selective epitaxy in round windows
31. Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them
32. High growth rate of AlN in a planetary MOVPE reactor
33. Study of tunneling transport of carriers in structures with an InGaN/GaN active region
34. High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range
35. Formation of composite InGaN/GaN/InAlN quantum dots
36. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
37. Structural and optical properties of InAlN/GaN distributed Bragg reflectors
38. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices
39. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
40. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
41. Indium-rich island structures formed by in-situ nanomasking technology
42. Optical and X-ray diffraction studies of multilayer structures based on InGaN/GaN solid solutions
43. Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers
44. Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs
45. Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen
46. InGaAlN heterostructures for LEDs grown on patterned sapphire substrates
47. Energy characteristics of excitons in structures based on InGaN alloys
48. Photoluminescence of localized excitons in InGan quantum dots
49. Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots
50. The study of lateral carrier transport in structures with InGaN quantum dots in the active region
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