44 results on '"Tsatsulnikov, A. F."'
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2. Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells
3. The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE
4. Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam
5. Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells
6. GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography
7. Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB
8. Selective Epitaxy of Submicron GaN Structures
9. Insulating GaN Epilayers Co-Doped with Iron and Carbon
10. Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
11. Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography
12. InGaN/GaN light-emitting diode microwires of submillimeter length
13. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
14. effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
15. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
16. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
17. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
18. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
19. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
20. The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy
21. Capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures
22. MOVPE of III-N LED structures with short technological process
23. Optical lattices of excitons in InGaN/GaN quantum well systems
24. Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions
25. Dependence of the efficiency of III-N blue LEDs on the structural perfection of GaN epitaxial buffer layers
26. Influence of the carrier Gas, trimethylgallium flow, and growth time on the character of the selective epitaxy of GaN
27. Electron scattering in AlGaN/GaN heterostructures with a two-dimensional electron gas
28. Composite InGaN/GaN/InAlN heterostructures emitting in the yellow-red spectral region
29. InGaN/GaN heterostructures grown by submonolayer deposition
30. Monolithic white LEDs: Approaches, technology, design
31. Group-III-nitride-based light-emitting diode on silicon substrate with epitaxial nanolayer of silicon carbide
32. Double-cross epitaxial overgrowth of nonpolar gallium nitride layers
33. Specific features of gallium nitride selective epitaxy in round windows
34. Influence of hydrogen on local phase separation in InGaN thin layers and properties of light-emitting structures based on them
35. High growth rate of AlN in a planetary MOVPE reactor
36. Study of tunneling transport of carriers in structures with an InGaN/GaN active region
37. The use of short-period InGaN/GaN superlattices in blue-region light-emitting diodes
38. A monolithic white LED with an active region based on InGaN QWs separated by short-period InGaN/GaN superlattices
39. Active region based on graded-gap InGaN/GaN superlattices for high-power 440- to 470-nm light-emitting diodes
40. Effect of pressure in the growth reactor on the properties of the active region in the InGaN/GaN light-emitting diodes
41. Indium-rich island structures formed by in-situ nanomasking technology
42. Effect of carrier gas and doping profile on the surface morphology of MOVPE grown heavily doped GaN:Mg layers
43. Effect of strain relaxation on active-region formation in InGaN/(Al)GaN heterostructures for green LEDs
44. AlGaN/GaN-HEMTs with a breakdown voltage higher than 100 V and maximum oscillation frequency f max as high as 100 GHz
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