68 results on '"Tsatsul’nikov, A. F."'
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2. Peculiarities of Epitaxial Growth of III–N LED Heterostructures on SiC/Si Substrates
3. The Effect of the Method by Which a High-Resistivity GaN Buffer Layer Is Formed on Properties of InAlN/GaN and AlGaN/GaN Heterostructures with 2D Electron Gas
4. Photonic-crystal waveguide for the second-harmonic generation
5. Growth and structure of GaN layers on silicon carbide synthesized on a Si substrate by the substitution of atoms: A model of the formation of V-defects during the growth of GaN
6. Resonance Bragg structure with double InGaN quantum wells
7. High-efficiency InGaN/GaN/AlGaN light-emitting diodes with short-period InGaN/GaN superlattice for 530–560 nm range
8. Formation of composite InGaN/GaN/InAlN quantum dots
9. Structural and optical properties of InAlN/GaN distributed Bragg reflectors
10. Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes
11. Optical and X-ray diffraction studies of multilayer structures based on InGaN/GaN solid solutions
12. Phase separation and nonradiative carrier recombination in active regions of light-emitting devices based on InGaN quantum dots in a GaN or AlGaN matrix
13. Vapor phase epitaxy of aluminum nitride from trimethylaluminum and molecular nitrogen
14. InGaAlN heterostructures for LEDs grown on patterned sapphire substrates
15. InGaN nanoinclusions in an AlGaN matrix
16. Energy characteristics of excitons in structures based on InGaN alloys
17. Effect of hydrogen on anisotropy of the p-GaN growth rate in the case of side-wall MOCVD
18. Photoluminescence of localized excitons in InGan quantum dots
19. Nonequilibrium population of charge carriers in structures with InGaN deep quantum dots
20. The study of lateral carrier transport in structures with InGaN quantum dots in the active region
21. Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition
22. Optical properties of MBE-grown ultrathin GaAsN insertions in GaAs matrix
23. Theoretical and experimental study of the effect of InAs growth rate on the properties of QD arrays in InAs/GaAs system
24. Structural and optical properties of InAs quantum dots in AlGaAs matrix
25. Optical properties of structures with ultradense arrays of Ge QDs in an Si matrix
26. Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates
27. High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates
28. Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures
29. The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix
30. 1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots
31. 1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them
32. The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm
33. Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range
34. Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 μm
35. Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots
36. Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots
37. A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate
38. Heteroepitaxial growth of InAs on Si: A new type of quantum dot
39. Gain characteristics of quantum-dot injection lasers
40. Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures
41. Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface
42. Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
43. Investigation of MOVPE-grown GaN layers doped with As atoms
44. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures
45. Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
46. Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix
47. Gain in injection lasers based on self-organized quantum dots
48. Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates
49. Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix
50. GaAsN/GaAs and InGaAsN/GaAs heterostructures grown by molecular beam epitaxy
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