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Start Over Author "P. F. Lugakov" Publisher pleiades publishing ltd
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1. Recombination of charge carriers in dislocation-free silicon containing growth microdefects of various types

Author

L. A. Kazakevich and P. F. Lugakov

Subjects
Materials science, Silicon, Condensed matter physics, business.industry, chemistry.chemical_element, Condensed Matter Physics, Dislocation free, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, chemistry, Electromagnetism, Optoelectronics, Charge carrier, business, Recombination
Abstract

The temperature and injection dependence of the charge-carrier lifetime in dislocation-free n-Si is analyzed, making it possible to characterize the recombination activity of various types of microdefects. The parameters of the primary recombination centers with A-and B-type microdefects have been found.

Published
1998
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