32 results on '"Zegrya, G. G."'
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2. Limiting Thickness of Pore Walls Formed in Processes of Anode Etching of Heavily Doped Semiconductors
3. Combustion Rate of Powdered Porous Silicon with Limited Space
4. Comparative Analysis of the Electroluminescence Efficiency in Type-I and Type-II Heterostructures Based on III–V Narrow-Gap Compounds
5. Piezoelectric Properties of Porous Silicon
6. Laser Effect in the Explosion of Porous Silicon
7. Properties of Two and Three-Component Explosive Compositions Based on Porous Silicon
8. Energy Spectrum of Electrons of Deep Impurity Centers in Wide-Bandgap Mesoscopic Semiconductors
9. Laser Initiation of Energy-Saturated Composites Based on Nanoporous Silicon
10. Mechanosensitivity of Nanoporous Silicon-Based Binary Mixtures
11. Mechanism of Singlet-Oxygen Generation on the Surface of Excited Nanoporous Silicon
12. Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions
13. Examination of the Capabilities of Metalorganic Vapor-Phase Epitaxy in Fabrication of Thin InAs/GaSb Layers
14. The Effect of Shungite Additives on Electric Discharge in Ammonium Perchlorate
15. Intraband Radiation Absorption by Free Holes in GaAs/InGaAs Quantum Wells with Allowance for Nonsphericity of the kP Hamiltonian
16. Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies
17. The Possibilities of Energy-Saturated Nanoporous Silicon-Based Composites (Review and New Results)
18. On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method
19. The Mechanism of Generation of Singlet Oxygen in the Presence of Excited Nanoporous Silicon
20. Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well
21. Erratum to: Effect of Conductivity Type and Doping Level of Silicon Crystals on the Size of Formed Pore Channels during Anodic Etching in Hydrofluoric Acid Solutions
22. Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs
23. Impact ionization rate in direct gap semiconductors
24. Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments
25. Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers
26. Role of Acoustoelectric Interaction in the Formation of Nanoscale Periodic Structures of Adsorbed Atoms
27. Nonradiative resonance energy transfer between semiconductor quantum dots
28. Effect of nonparabolicity of the electron and light-hole energy spectrum on the optical properties of heterostructures with deep AlSb/InAs0.86Sb0.14/AlSb quantum wells
29. Temperature dependence of the carrier lifetime in Cd x Hg1 − x Te narrow-gap solid solutions with consideration for Auger processes
30. The influence of the nonparabolic energy spectrum of charge carriers on the optical characteristics of AlSb/InAs0.84Sb0.16/AlSb heterostructures with deep quantum wells
31. Optical properties of heterostructures with deep AlSb/InAs0.84Sb0.16/AlSb quantum wells
32. The role of exchange interaction in nonradiative energy transfer between semiconductor quantum dots
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