29 results on '"Tsatsulnikov, A. F."'
Search Results
2. Study of Ga2O3 Deposition by MOVPE from Trimethylgallium and Oxygen in a Wide Temperature Range
3. A GaN/AlGaN Resonance Bragg Structure
4. Critical Disorder in InGaN/GaN Resonant Bragg Structures
5. A Light-Emitting Diode Based on AlInGaN Heterostructures Grown on SiC/Si Substrates and Its Fabrication Technology
6. Resonant Reflection of Light from an Excitonic Optical Grating Formed by 100 InGaN Quantum Wells
7. The Influence of Reactor Pressure on the Properties of GaN Layers Grown by MOVPE
8. Luminescence Line Broadening Caused by Alloy Disorder in InGaN Quantum Wells
9. Effect of Annealing on Luminescence of InGaN/GaN Structures Etched by a Focused Ion Beam
10. Calculation of the Ga+ FIB Ion Dose Distribution by SEM Image
11. Etching of Disc and Ring Patterns in Si3N4/GaN Structure by Ga+ FIB
12. GaN Selective Epitaxy in Sub-Micron Windows with Different Depths Formed by Ion Beam Nanolithography
13. Selective Epitaxy of Submicron GaN Structures
14. Insulating GaN Epilayers Co-Doped with Iron and Carbon
15. Ultrathin Barrier InAlN/GaN Heterostructures for HEMTs
16. Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography
17. InGaN/GaN light-emitting diode microwires of submillimeter length
18. Optical spectroscopy of a resonant Bragg structure with InGaN/GaN quantum wells
19. effect of the parameters of AlN/GaN/AlGaN and AlN/GaN/InAlN heterostructures with a two-dimensional electron gas on their electrical properties and the characteristics of transistors on their basis
20. Epitaxial growth of GaN/AlN/InAlN heterostructures for HEMTs in horizontal MOCVD reactors with different designs
21. Semi-insulating GaN:C epilayers grown by metalorganic vapor phase epitaxy using propane as a carbon source
22. The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
23. Optimization of the parameters of HEMT GaN/AlN/AlGaN heterostructures for microwave transistors using numerical simulation
24. Effect of the design of the active region of monolithic multi-color LED heterostructures on their spectra and emission efficiency
25. The influence of aluminum content on the surface morphology of heavily doped (Al)GaN mesastrip structures grown by selective metalorganic vapor phase epitaxy
26. Capacitance-voltage characteristics of (Al/Ti)/Al2O3/n-GaN MIS structures
27. MOVPE of III-N LED structures with short technological process
28. Optical lattices of excitons in InGaN/GaN quantum well systems
29. Properties of InGaN/GaN heterostructures obtained using growth interruption under various conditions
Catalog
Books, media, physical & digital resources
Discovery Service for Jio Institute Digital Library
For full access to our library's resources, please sign in.