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1. 2D multilayer InSe – An applicable 1000 nm light emitter and absorber

Author

Bo-Xian Yeh, Min-Han Lin, Ching-An Chuang, Yun-Ju Chu, and Ching-Hwa Ho

Subjects
Materials science, Photoluminescence, business.industry, Photoconductivity, Light intensity, symbols.namesake, Optics, Semiconductor, symbols, Optoelectronics, Light emission, business, Luminescence, Raman spectroscopy, Absorption (electromagnetic radiation)
Abstract

Multilayer InSe with a thickness above 20 nm is a direct semiconductor for flexible-optoelectronics use. We show a superior 1000-nm light emission and absorption capability of 2D multilayer InSe studied by photoluminescence and photoconductivity herein.

Published
2016
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