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We propose wavelength-selective infrared sensors made by multiple metallic resonant waveguide gratings integrated on a germanium photodetector array. The detective spectrum can cover from 1.25μm to 1.55μm with the FWHM less than 25nm.

A low-voltage dual-drive push-pull Si Mach-Zehnder modulator is demonstrated to implement an optical 25 Gbaud (50 Gb/s) PAM-4 transmission.

A high speed Si modulator with fringe field junctions is presented. Low carrier absorption (1.3 dB/mm) and Vπ L (1.8 V-cm) are demonstrated. The measured modulation speed and depth are 11.8-GHz and 8-dB.

We report a silicon avalanche photodetector with low breakdown voltage of −6.44V. Through a design of narrow interdigitated junction spacing and Ni-silicide process, a high avalanche gain of 30 and low dark current are achieved.

We present slow light pulse propagation in MEMS-tunable microdisks at telecom wavelength for the first time. Furthermore we obtain delays up to 94 ps, a slowdown factor of 700, and a delay-bandwidth product of 0.5.