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We propose a force sensor, with optical detection, based on a reconfigurable multicavity photonic molecule distributed over two parallel photonic crystal membranes. The system spectral behaviour is described with an analytical model based on coupled mode theory and validated by finite difference time domain simulations. The deformation of the upper photonic crystal membrane, due to a localized vertical force, is monitored by the relative spectral positions of the photonic molecule resonances. The proposed system can act both as force sensor, with pico-newton sensitivity, able to identify the position where the force is applied, and as torque sensor able to measure the torsion of the membrane along two perpendicular directions.

We present a novel method to fabricate fiber-tip sensors. Using high-throughput semiconductor fabrication methods combined with a simple fiber-attachment scheme, we can mass-produce the sensors, preserving their surface unaltered. We experimentally demonstrate the sensor performance.

We propose a novel photon number resolving detector structure with large dynamic range. It consists of the series connection of N superconducting nanowires, each connected in parallel to an integrated resistor. Photon absorption in a wire switches its current to the parallel resistor producing a voltage pulse and the sum of these voltages is measured at the output. The combination of this structure and a high input impedance preamplifier result in linear, high fidelity, and fast photon detection in the range from one to several tens of photons.

We demonstrate high-performance nanowire superconducting single photon detectors (SSPDs) on ultrathin NbN films grown at a temperature compatible with monolithic integration. NbN films ranging from 150nm to 3nm in thickness were deposited by dc magnetron sputtering on MgO substrates at 400C. The superconducting properties of NbN films were optimized studying the effects of deposition parameters on film properties. SSPDs were fabricated on high quality NbN films of different thickness (7 to 3nm) deposited under optimal conditions. Electrical and optical characterizations were performed on the SSPDs. The highest QE value measured at 4.2K is 20% at 1300nm.

Light sources on the micro and nano-scale are of great interest in recent years. Especially for data communication over centimeters densely integrated lasers are required. Ultra-small devices have been demonstrated[1]; the efficiency of such devices on the other hand is far behind values demonstrated for larger integrated laser concepts [2]. As a consequence the density of laser integration is currently limited by power consumption and cooling properties rather than the actual device footprint. In this work we present a design and first fabrication trials for a micron-scale laser promising record efficiencies exceeding 20%. A schematic representation of the laser is shown in figure 1 a).