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Metalenses are attracting a large interest for the implementation of complex optical functionalities in planar and compact devices. However, chromatic and off-axis aberrations remain standing challenges. Here, we experimentally investigate the broadband behavior of metalenses based on quadratic phase profiles. We show that these metalenses do not only guarantee an arbitrarily large field of view but are also inherently tolerant to longitudinal and transverse chromatic aberrations. As such, we demonstrate a single-layer, silicon metalens with a field of view of 86° and a bandwidth up to 140 nm operating at both 1300 nm and 1550 nm telecommunication wavelength bands.

Integrated mid-infrared micro-spectrometers have a great potential for applications in environmental monitoring and space exploration. Silicon-on-insulator (SOI) is a promising platform to tackle this integration challenge, owing to its unique capability for large volume and low-cost production of ultra-compact photonic circuits. However, the use of SOI in the mid-infrared is restricted by the strong absorption of the buried oxide layer for wavelengths beyond 4 µm. Here, we overcome this limitation by utilizing metamaterial-cladded suspended silicon waveguides to implement a spatial heterodyne Fourier-transform (SHFT) spectrometer operating at wavelengths near 5.5 µm. The metamaterial-cladded geometry allows removal of the buried oxide layer, yielding measured propagation loss below 2 dB/cm at wavelengths between 5.3 and 5.7 µm. The SHFT spectrometer comprises 19 Mach-Zehnder interferometers with a maximum arm length imbalance of 200 µm, achieving a measured spectral resolution of 13 cm -1 and a free spectral range of 100 cm -1 at wavelengths near 5.5 µm.

Integrated wavelength filters with high optical rejection are key components in several silicon photonics circuits, including quantum photon-pair sources and spectrometers. Non-coherent cascading of modal-engineered Bragg filters allows for remarkable optical rejections in structures that only support transverse-electric (TE) polarized modes such as uncladded 220-nm-thick silicon. However, the restriction to TE-only platforms limits the versatility of the non-coherent cascading approach. Here, we propose and experimentally demonstrate a new, to the best of our knowledge, approach for high-rejection filters in polarization-diverse platforms by combining non-coherent cascading of modal-engineered Bragg filters and anisotropy-engineered metamaterial bends. Bragg filters provide a high rejection of the TE mode, while the metamaterial bends remove any residual power propagating in the transverse-magnetic (TM) mode, without any penalty in terms of insertion loss or device footprint. Based on this strategy, we demonstrate optical rejection exceeding 60 dB in 300-nm-thick, cladded silicon waveguides.

Silicon photonics on-chip spectrometers are finding important applications in medical diagnostics, pollution monitoring, and astrophysics. Spatial heterodyne Fourier transform spectrometers (SHFTSs) provide a particularly interesting architecture with a powerful passive error correction capability and high spectral resolution. Despite having an intrinsically large optical throughput (étendue, also referred to as Jacquinot's advantage), state-of-the-art silicon SHFTSs have not exploited this advantage yet. Here, we propose and experimentally demonstrate for the first time, to the best of our knowledge, an SHFTS implementing a wide-area light collection system simultaneously feeding an array of 16 interferometers, with an input aperture as large as 90µ m ×60µ m formed by a two-way-fed grating coupler. We experimentally demonstrate 85 pm spectral resolution, 600 pm bandwidth, and 13 dB étendue increase, compared with a device with a conventional grating coupler input. The SHFTS was fabricated using 193 nm deep-UV optical lithography and integrates a large-size input aperture with an interferometer array and monolithic Ge photodetectors, in a 4.5 m m 2 footprint.

Surface grating couplers are fundamental building blocks for coupling the light between optical fibers and integrated photonic devices. However, the operational bandwidth of conventional grating couplers is intrinsically limited by their wavelength-dependent radiation angle. The few dual-band grating couplers that have been experimentally demonstrated exhibit low coupling efficiencies and rely on complex fabrication processes. Here we demonstrate for the first time, to the best of our knowledge, the realization of an efficient dual-band grating coupler fabricated using 193 nm deep-ultraviolet lithography for 10 Gbit symmetric passive optical networks. The footprint of the device is 17×10µ m 2 . We measured coupling efficiencies of -4.9 and -5.2 d B with a 3-dB bandwidth of 27 and 56 nm at the wavelengths of 1270 and 1577 nm, corresponding to the upstream and downstream channels, respectively.

A polarization tolerant optical receiver is a key building block for the development of wavelength division multiplexing based high-speed optical data links. However, the design of a polarization independent demultiplexer is not trivial. In this Letter, we report on the realization of a polarization tolerant arrayed waveguide grating (AWG) on a 300-mm silicon nitride (SiN) photonic platform. By introducing a series of individual polarization rotators in the middle of the waveguide array, the polarization dependence of the AWG has been substantially reduced. Insertion losses below 2.2 dB and a crosstalk level better than -29 d B has been obtained for transverse electric and transverse magnetic polarizations on a four-channel coarse AWG. The AWG temperature sensitivity has also been evaluated. Thanks to the low thermo-optical coefficient of SiN, a thermal shift below 12 pm/°C has been demonstrated.

Waveguide Bragg grating filters with narrow bandwidths and high optical rejections are key functions for several advanced silicon photonics circuits. Here, we propose and demonstrate a new, to the best of our knowledge, Bragg grating geometry that provides a narrowband and high rejection response. It combines the advantages of subwavelength and modal engineering. As a proof-of-concept demonstration, we implement the proposed Bragg filters in 220-nm-thick Si technology with a single etch step. We experimentally show flexible control of the filter selectivity, with measured null-to-null bandwidths below 2 nm, and strength of 60 dB rejection with a null-to-null bandwidth of 1.8 nm.

Brillouin optomechanics has recently emerged as a promising tool to implement new functionalities in silicon photonics, including high-performance opto-RF processing and nonreciprocal light propagation. One key challenge in this field is to maximize the photon-phonon interaction and the phonon lifetime, simultaneously. Here, we propose a new, to the best of our knowledge, strategy that exploits subwavelength engineering of the photonic and phononic modes in silicon membrane waveguides to maximize the Brillouin gain. By properly designing the dimensions of the subwavelength periodic structuration, we tightly confine near-infrared photons and GHz phonons, minimizing leakage losses and maximizing the Brillouin coupling. Our theoretical analysis predicts a high mechanical quality factor of up to 700 and a remarkable Brillouin gain yielding 3500( W ⋅ m ) -1 for minimum feature size of 50 nm, compatible with electron-beam lithography. We believe that the proposed waveguide with subwavelength nanostructure holds great potential for the engineering of Brillouin optomechanical interactions in silicon.

The mid-infrared (mid-IR) wavelength range hosts unique vibrational and rotational resonances of a broad variety of substances that can be used to unambiguously detect the molecular composition in a non-intrusive way. Mid-IR photonic-integrated circuits (PICs) are thus expected to have a major impact in many applications. Still, new challenges are posed by the large spectral width required to simultaneously identify many substances using the same photonic circuit. Ge-rich graded SiGe waveguides have been proposed as a broadband platform approach for mid-IR PICs. In this work, ultra-broadband waveguides are experimentally demonstrated within unprecedented wavelength range, efficiently guiding light from 5 to 11 µm. Interestingly, losses from 0.5 to 1.2 dB/cm are obtained between 5.1 and 8 µm wavelength, and values below 3 dB/cm are measured from 9.5 to 11.2 µm wavelength. An increase of propagation losses is seen between 8 and 9.5 µm; however, values stay below 4.6 dB/cm in the entire wavelength range. A detailed analysis of propagation losses is reported, supported by secondary ion mass spectrometry measurement, and different contributions are analyzed: silicon substrate absorption, oxygen impurities, free carrier absorption by residual doping, sidewall roughness and multiphonon absorption. Finally, Mach-Zehnder interferometers are characterized, and wideband operation is experimentally obtained from 5.5 to 10.5 µm wavelength.

We demonstrated a class of highly nonlinear hybrid waveguide structures based on infiltration of As 2 S 3 chalcogenide glass into silicon slot waveguides. The nonlinear properties of the hybrid waveguides were precisely quantified via a bidirectional top-hat D-scan method, enabling a direct comparison between properties measured using different device geometries. We experimentally demonstrate hybrid As 2 S 3 -Si slot waveguides with a two-photon absorption (TPA) figure of merit exceeding 2 at near infrared wavelengths. These waveguides largely satisfy the critical criterion for efficient nonlinear integrated photonics (FOMTPAwg>1), allowing phase shifts greater than π with minimal overall losses. These results pave the way for efficient and robust ultrafast all-optical devices and circuits in large-scale silicon photonics technology.

The availability of low-loss optical interfaces to couple light between standard optical fibers and high-index-contrast silicon waveguides is essential for the development of chip-integrated nanophotonics. Input and output couplers based on diffraction gratings are attractive coupling solutions. Advanced grating coupler designs, with Bragg or metal mirror underneath, low- and high-index overlays, and multi-level or multi-layer layouts, have proven less useful due to customized or complex fabrication, however. In this work, we propose a rather simpler in design of efficient off-chip fiber couplers that provide a simulated efficiency up to 95% (-0.25 dB) at a wavelength of 1.55 µm. These grating couplers are formed with an L-shaped waveguide profile and synthesized subwavelength grating metamaterials. This concept jointly provides sufficient degrees of freedom to simultaneously control the grating directionality and out-radiated field profile of the grating mode. The proposed chip-to-fiber couplers promote robust sub-decibel coupling of light, yet contain device dimensions (> 120 nm) compatible with standard lithographic technologies presently available in silicon nanophotonic foundries. Fabrication imperfections are also investigated. Dimensional offsets of ± 15 nm in shallow-etch depth and ± 10 nm in linewidth's and mask misalignments are tolerated for a 1-dB loss penalty. The proposed concept is meant to be universal, which is an essential prerequisite for developing reliable and low-cost optical couplers. We foresee that the work on L-shaped grating couplers with sub-decibel coupling efficiencies could also be a valuable direction for silicon chip interfacing in integrated nanophotonics.

Long-wave infrared photonics is an exciting research field meant to revolutionize our daily life by means of key advances in several domains including communications, imaging systems, medical care, environmental monitoring, or multispectral chemical sensing, among others. For this purpose, integrated photonics is particularly promising owing to its compactness, mass fabrication, and energy-efficient characteristics. We present in this Letter, for the first time to the best of our knowledge, broadband integrated racetrack ring resonators operating within the crucial molecular fingerprint region. Devices show an operation bandwidth of Δλ≈900  nm with a central wavelength of λ≈8  μm, a quality factor of Q≈3200, and an extinction ratio of ER≈10  dB around the critical coupling condition. These resonant structures establish the basis of a new generation of integrated building blocks for long-wave infrared photonics that opens the route towards miniaturized multitarget molecule detection systems.

Taking advantage of unique molecular absorption lines in the mid-infrared fingerprint region and of the atmosphere transparency window (3-5 µm and 8-14 µm), mid-infrared silicon photonics has attracted more research activities with a great potential for applications in different areas, including spectroscopy, remote sensing, free-space communication and many others. However, the demonstration of resonant structures operating at long-wave infrared wavelengths still remains challenging. Here, we demonstrate Bragg grating-based Fabry-Perot resonators based on Ge-rich SiGe waveguides with broadband operation in the mid-infrared. Bragg grating waveguides are investigated first at different wavelengths from 5.4 µm up to 8.4 µm, showing a rejection band up to 21 dB. Integrated Fabry-Perot resonators are then demonstrated for the first time in the 8 µm-wavelength range, showing Q-factors as high as 2200. This first demonstration of integrated mid-infrared Fabry-Perot resonators paves the way towards resonance-enhanced sensing circuits and non-linear based devices at these wavelengths.

Miniaturized on-chip spectrometers covering a wide band of the mid-infrared spectrum have an immense potential for multi-target detection in high-impact applications, such as chemical sensing or environmental monitoring. Specifically, multi-aperture spatial heterodyne Fourier-transform spectrometers (SHFTS) provide high throughput and improved tolerance against fabrication errors, compared to conventional counterparts. Still, state-of-the-art implementations have only shown single-polarization operation in narrow bandwidths within the near and short infrared. Here, we demonstrate the first, to the best of our knowledge, dual-polarization ultra-wideband SHFTS working beyond 5 μm wavelength. We exploit the unique flexibility in material engineering of the graded-index germanium-rich silicon-germanium (Ge-rich SiGe) photonic platform to implement a SHFTS that can be operated in an unprecedented range of 800  cm -1 , showing experimental resolution better than 15  cm -1 for both orthogonal polarizations and free spectral range of 132  cm -1 , in the wavelength range between 5 and 8.5 μm.

Bragg filters stand as key building blocks of the silicon-on-insulator (SOI) photonics platform, allowing the implementation of advanced on-chip signal manipulation. However, achieving narrowband Bragg filters with large rejection levels is often hindered by fabrication constraints and imperfections. Here, we show that the combination of single-side corrugation asymmetry and subwavelength engineering provides a narrowband response with large corrugations, overcoming minimum feature size constraints of conventional Si Bragg filters. We comprehensively study the impact of the corrugation asymmetry in conventional and subwavelength single-etched SOI Bragg filters, showing their potential for bandwidth reduction. Finally, we experimentally demonstrate novel subwavelength geometry based on shifted corrugation teeth, achieving null-to-null bandwidths and rejections of 0.8 nm and 40 dB for the symmetric configuration and 0.6 nm and 15 dB for the asymmetric case.

Mid-infrared (mid-IR) silicon photonics is expected to lead key advances in different areas including spectroscopy, remote sensing, nonlinear optics or free-space communications, among others. Still, the inherent limitations of the silicon-on-insulator (SOI) technology, namely the early mid-IR absorption of silicon oxide and silicon at λ~3.6 µm and at λ ~8.5 µm respectively, remain the main stumbling blocks that prevent this platform to fully exploit the mid-IR spectrum (λ ~2-20 µm). Here, we propose using a compact Ge-rich graded-index Si 1-x Ge x platform to overcome this constraint. A flat propagation loss characteristic as low as 2-3 dB/cm over a wavelength span from λ = 5.5 µm to 8.5 µm is demonstrated in Ge-rich Si 1-x Ge x waveguides of only 6 µm thick. The comparison of three different waveguides design with different vertical index profiles demonstrates the benefit of reducing the fraction of the guided mode that overlaps with the Si substrate to obtain such flat low loss behavior. Such Ge-rich Si 1-x Ge x platforms may open the route towards the implementation of mid-IR photonic integrated circuits with low-loss beyond the Si multi-phonon absorption band onset, hence truly exploiting the full Ge transparency window up to λ ~15 µm.

In this work, we theoretically and experimentally demonstrate an unusual air mode silicon nanobeam cavity design with dielectric mirrors. This design combines an extremely strong localization of light-matter interaction in the cavity center and a reduced sensitivity of the resonator wavelength to temperature or top cladding material refractive index variations. The proposed approach allows accurate control of the resonator cavity quality factor combined with flexible choice of the cavity effective mode volume. Q-factors higher than 50,000 have been determined for such cavities and mode volumes smaller than (λ/n) 3 were achieved in the investigated configurations. Such a cavity design provides a robust approach to study the hybrid integration of various active materials in the silicon platform, including carbon nanotubes, III-V nanowires, graphene, etc., for light emission, modulation, or detection.

This Letter explores the use of Ge-rich Si 0.2 Ge 0.8 waveguides on graded Si 1-x Ge x substrate for the demonstration of ultra-wideband photonic integrated circuits in the mid-infrared (mid-IR) wavelength range. We designed, fabricated, and characterized broadband Mach-Zehnder interferometers fully covering a range of 3 μm in the mid-IR band. The fabricated devices operate indistinctly in quasi-TE and quasi-TM polarizations, and have an extinction ratio higher than 10 dB over the entire operating wavelength range. The obtained results are in good correlation with theoretical predictions, while numerical simulations indicate that the device bandwidth can reach one octave with low additional losses. This Letter paves the way for further realization of mid-IR integrated spectrometers using low-index-contrast Si 1-x Ge x waveguides with high germanium concentration.

Grating couplers enable position-friendly interfacing of silicon chips by optical fibers. The conventional coupler designs call upon comparatively complex architectures to afford efficient light coupling to sub-micron silicon-on-insulator (SOI) waveguides. Conversely, the blazing effect in double-etched gratings provides high coupling efficiency with reduced fabrication intricacy. In this Letter, we demonstrate for the first time, to the best of our knowledge, the realization of an ultra-directional L-shaped grating coupler, seamlessly fabricated by using 193 nm deep-ultraviolet (deep-UV) lithography. We also include a subwavelength index engineered waveguide-to-grating transition that provides an eight-fold reduction of the grating reflectivity, down to 1% (-20  dB). A measured coupling efficiency of -2.7  dB (54%) is achieved, with a bandwidth of 62 nm. These results open promising prospects for the implementation of efficient, robust, and cost-effective coupling interfaces for sub-micrometric SOI waveguides, as desired for large-volume applications in silicon photonics.

Germanium photodetectors are considered to be mature components in the silicon photonics device library. They are critical for applications in sensing, communications, or optical interconnects. In this work, we report on design, fabrication, and experimental demonstration of an integrated waveguide PIN photodiode architecture that calls upon lateral double Silicon/Germanium/Silicon (Si/Ge/Si) heterojunctions. This photodiode configuration takes advantage of the compatibility with contact process steps of silicon modulators, yielding reduced fabrication complexity for transmitters and offering high-performance optical characteristics, viable for high-speed and efficient operation near 1.55 μm wavelengths. More specifically, we experimentally obtained at a reverse voltage of 1V a dark current lower than 10 nA, a responsivity higher than 1.1 A/W, and a 3 dB opto-electrical cut-off frequency over 50 GHz. The combined benefits of decreased process complexity and high-performance device operation pave the way towards attractive integration strategies to deploy cost-effective photonic transceivers on silicon-on-insulator substrates.

Controlling the group velocity dispersion of silicon nanophotonic waveguides has been recognized as a key ingredient to enhance the development of various on-chip optical applications. However, the strong wavelength dependence of the dispersion in waveguides implemented on the high index contrast silicon-on-insulator (SOI) platform substantially hinders their wideband operation, which in turn, limits their deployment. In this work, we exploit the potential of non-resonant sub-wavelength grating (SWG) nanostructures to perform a flexible and wideband control of dispersion in SOI waveguides. In particular, we demonstrated that the overall dispersion of the SWG-engineered metamaterial waveguides can be tailored across the transparency window of the SOI platform, keeping easy-to-handle single-etch step manufacturing. The SWG silicon waveguides overcladded by silicon nitride exhibit significant reduction of wavelength dependence of dispersion, yet providing intriguing and customizable synthesis of various attractive dispersion profiles. These include large normal up to low anomalous operation regimes, both of which could make a great promise for plethora of emerging applications in silicon photonics.

Polymer-sorted semiconducting single-walled carbon nanotubes (SWNTs) provide room-temperature emission at near-infrared wavelengths, with potential for large volume production of high-quality solutions and wafer-scale deposition. These features make SWNTs a very attractive material for the realization of on-chip light sources. Coupling SWNT into optical microcavities could enhance and guide their emission, while enabling spectral selection by cavity resonance engineering. This could allow the realization of bright, narrowband sources. Here, we report the first demonstration of coupling SWNTs into the resonant modes of Si hollow-core photonic crystal cavities. We exploit the strong evanescent field in these resonators to interact with SWNT emission, coupling it into an integrated access waveguide. Based on this concept, we demonstrate narrowband SWNT emission resonantly coupled into a Si bus waveguide with a full width at half-maximum of 0.34 nm and an off-resonance rejection exceeding 5 dB.

The high index contrast of the silicon-on-insulator (SOI) platform allows the realization of ultra-compact photonic circuits. However, this high contrast hinders the implementation of narrow-band Bragg filters. These typically require corrugation widths of a few nanometers or double-etch geometries, hampering device fabrication. Here we report, for the first time, to the best of our knowledge, on the realization of SOI Bragg filters based on sub-wavelength index engineering in a differential corrugation width configuration. The proposed double periodicity structure allows narrow-band rejection with a single etch step and relaxed width constraints. Based on this concept, we experimentally demonstrate a single-etch, 220 nm thick, Si Bragg filter featuring a corrugation width of 150 nm, a rejection bandwidth of 1.1 nm, and an extinction ratio exceeding 40 dB. This represents a 10-fold width increase, compared to conventional single-periodicity, single-etch counterparts with similar bandwidths.

This work explores the use of Ge-rich graded-index Si 1- xGex rib waveguides as building blocks to develop integrated nonlinear optical devices for broadband operation in the mid-IR. The vertical Ge gradient concentration in the waveguide core renders unique properties to the guided optical mode, providing tight mode confinement over a broadband mid-IR wavelength range from λ = 3 µm to 8 µm. Additionally, the gradual vertical confinement pulls the optical mode upwards in the waveguide core, overlapping with the Ge-rich area where the nonlinear refractive index is larger. Moreover, the Ge-rich graded-index Si 1- xGex waveguides allow efficient tailoring of the chromatic dispersion curves, achieving flat anomalous dispersion for the quasi-TM optical mode with D ≤ 14 ps/nm/km over a ~1.4 octave span while retaining an optimum third-order nonlinear parameter, γeff. These results confirm the potential of Ge-rich graded-index Si 1- xGex waveguides as an attractive platform to develop mid-IR nonlinear approaches requiring broadband dispersion engineering.

We report an efficient energy-time entangled photon-pair source based on four-wave mixing in a CMOS-compatible silicon photonics ring resonator. Thanks to suitable optimization, the source shows a large spectral brightness of 400 pairs of entangled photons /s/MHz for 500 μW pump power, compatible with standard telecom dense wavelength division multiplexers. We demonstrate high-purity energy-time entanglement, i.e., free of photonic noise, with near perfect raw visibilities (> 98%) between various channel pairs in the telecom C-band. Such a compact source stands as a path towards more complex quantum photonic circuits dedicated to quantum communication systems.

We experimentally investigate refractive index sensing in silicon slot waveguide ring resonators by the detection of the giant shift of the ring transmission spectrum envelope enabled by the following specific conditions: the slot waveguide cross section as well as the ring couplers have been designed to lead to a V-shaped microring resonator spectrum modulated by the classical frequency comb and exhibiting quality factor peaks of 2000-6000 around λ=1.5  μm. By tracking the spectrum envelope wavelength shift, sensitivity up to S=1,300  nm per refraction index unit (RIU) is reported when the slots are filled by liquids with refraction index values close to 1.33.

Vertical slot waveguide micro-ring resonators in silicon photonics have already been demonstrated in previous works and applied to several schemes, including sensing and hybrid nonlinear optics. Their performances, first quantified by the reachable Q-factors, are still perceived to be restrained by larger intrinsic propagation losses than those suffered by simple Si wire waveguides. In this Letter, the optical loss mechanisms of slot waveguide micro-ring resonators are thoroughly investigated with a special focus on the coupler loss contribution that turns out to be the key obstacle to achieving high Q-factors. By engineering the coupler design, slotted ring resonators with a 50 μm radius are experienced with a loaded Q-factor up to 10 times improvement from Q=3,000 to Q=30,600. The intrinsic losses due to the light propagation in the bent slot ring itself are proved to be as low as 1.32±0.87  dB/cm at λ=1,550  nm. These investigations of slot ring resonators open high performance potentials for on-chip nonlinear optical processing or sensing in hybrid silicon photonics.

The integration of germanium (Ge)-rich active devices in photonic integrated circuits is challenging due to the lattice mismatch between silicon (Si) and Ge. A new Ge-rich silicon-germanium (SiGe) waveguide on graded buffer was investigated as a platform for integrated photonic circuits. At a wavelength of 1550 nm, low loss bends with radii as low as 12 µm and Multimode Interferometer beam splitter based on Ge-rich SiGe waveguide on graded buffer were designed, fabricated and characterized. A Mach Zehnder interferometer exhibiting a contrast of more than 10 dB has been demonstrated.

The large field enhancement that can be achieved in high quality factor and small mode volume photonic crystal microcavities leads to strengthened nonlinear interactions. However, the frequency shift dynamics of the cavity resonance under a pulsed excitation, which is driven by nonlinear refractive index change, tends to limit the coupling efficiency between the pulse and the cavity. As a consequence, the cavity enhancement effect cannot last for the entire pulse duration, limiting the interaction between the pulse and the intra-cavity material. In order to preserve the benefit of light localization throughout the pulsed excitation, we report the first experimental demonstration of coherent excitation of a nonlinear microcavity, leading to an enhanced intra-cavity nonlinear interaction. We investigate the nonlinear behavior of a Silicon-based microcavity subject to tailored positively chirped pulses, enabling to increase the free carrier density generated by two-photon absorption by up to a factor of 2.5 compared with a Fourier-transform limited pulse excitation of equal energy. It is accompanied by an extended frequency blue-shift of the cavity resonance reaching 19 times the linear cavity bandwidth. This experimental result highlights the interest in using coherent excitation to control intra-cavity light-matter interactions and nonlinear dynamics of microcavity-based optical devices.

We present the realization of an optical sensor based on an infiltrated high-Q slot photonic crystal cavity in a nonfreestanding membrane configuration. Successive infiltrations by liquids with refractive indices ranging from 1.345 to 1.545 yield a sensitivity S of 235 nm/RIU (refractive index unit), while the Q-factor is comprised between 8000 and 25,000, giving a sensor figure of merit up to 3700. This sensor has a detection limit of 1.25×10⁻⁵. The operation of this device on a silicon-on-insulator (SOI) substrate allows a straightforward integration in the silicon photonics platform, while providing a compliant mechanical stability.

We investigate the influence of the wavelength, within the 1.3μm-1.63μm range, on the second-order optical nonlinearity in silicon waveguides strained by a silicon nitride (Si₃N ₄) overlayer. The effective second-order optical susceptibility χxxy(2)¯ evolutions have been determined for 3 different waveguide widths 385 nm, 435 nm and 465 nm and it showed higher values for longer wavelengths and narrower waveguides. For wWG = 385 nm and λ = 1630 nm, we demonstrated χxxy(2)¯ as high as 336 ± 30 pm/V. An explanation based on the strain distribution within the waveguide and its overlap with optical mode is then given to justify the obtained results.

We demonstrate high-speed silicon modulators based on carrier depletion in interleaved pn junctions fabricated on 300 mm-SOI wafers using CMOS foundry facilities. 950 µm-long Mach Zehnder (MZ) and ring resonator (RR) modulator with a 100 µm radius, were designed, fabricated and characterized. 40 Gbit/s data transmission has been demonstrated for both devices. The MZ modulator exhibited a high extinction ratio of 7.9 dB with only 4 dB on-chip losses at the operating point.

The use of a birefringent graded photonic crystal (GPhC) is proposed for the realization of an efficient polarization beam splitter. This approach allows decoupling the two functions of efficient light injection for both polarizations and TE/TM beam splitting. A smooth light polarization splitting is naturally achieved due to the different curved trajectories followed within the graded medium by the TE and TM waves. A 160 nm operating bandwidth with insertion loss around 1 dB and interpolarization crosstalk below -15 dB is predicted by a finite difference time domain simulation. The unusually exploited electromagnetic phenomena are experimentally evidenced by scanning near-field optical measurements performed on samples fabricated using the silicon on insulator photonics technology. These experimental works open perspectives for the use of birefringent GPhCs to manage polarization diversity in silicon photonic circuits.

Room-temperature quantum-confined Stark effect in a Ge/SiGe quantum-well structure is reported at the wavelength of 1.3 μm. The operating wavelength is tuned by the use of strain engineering. Low-energy plasma-enhanced chemical vapor deposition is used to grow 20 periods of strain-compensated quantum wells (8 nm Ge well and 12 nm Si(0.35)Ge(0.65) barrier) on Si(0.21)Ge(0.79) virtual substrate. The fraction of light absorbed per well allows for a strong modulation around 1.3 μm. The half-width at half-maximum of the excitonic peak of only 12 meV allows for a discussion on physical mechanisms limiting the performances of such devices.

A flexible design of slot photonic crystal waveguide with a wide comb is investigated. Introduction of a carefully designed comb within the photonic crystal waveguide allows an accurate dispersion engineering in order to achieve slow light and increase the optical confinement within the comb. The strong light confinement results in an extremely small nonlinear effective area around 0.015  μm2. We report experimental realization of a comb photonic crystal waveguide with measured group indices higher than 100 in a Mach-Zehnder interferometer configuration and extract losses limited to 3.7 dB for a 100 μm device at n(g)=37.

Experimental results on light bending in a non-homogenizable graded photonic crystal operating at optical wavelengths are presented in this paper. A square lattice silicon on insulator photonic crystal made of a two-dimensional chirp of the air-hole filling factor is exploited to produce the bending effect in a near bandgap frequency range. The sensitivity of light paths to wavelength tuning is also exploited to show demultiplexing capability with low insertion loss (<2dB) and low crosstalk (~-20dB). This experimental demonstration opens opportunities for light manipulation using a generalized two-dimensional chirp of photonic crystal lattice parameters. It also constitutes an alternative solution to the use of photonic metamaterials combining dielectric and metallic materials with sub-wavelength unit cells.

We report on high speed operation of a Ge/SiGe multiple quantum well (MQW) electro-absorption modulator in a waveguide configuration. 23 GHz bandwidth is experimentally demonstrated from a 3 µm wide and 90 µm long Ge/SiGe MQW waveguide. The modulator exhibits a high extinction ratio of more than 10 dB over a wide spectral range. Moreover with a swing voltage of 1 V between 3 and 4 V, an extinction ratio as high as 9 dB can be obtained with a corresponding estimated energy consumption of 108 fJ per bit. This demonstrates the potentiality of Ge/SiGe MQWs as a building block of silicon compatible photonic integrated circuits for short distance energy efficient optical interconnections.

We report room-temperature quantum-confined Stark effect in Ge/SiGe multiple quantum wells (MQWs) with light propagating parallel to the plane of the Ge/SiGe MQWs for applications in integrated photonics. Planar waveguides embedded in a p-i-n diode are fabricated in order to investigate the absorption spectra at different reverse bias voltages from optical transmission measurements for both TE and TM polarizations. Polarization dependence of the absorption spectra of the Ge/SiGe MQWs is clearly observed. The planar waveguides exhibit a high extinction ratio and low insertion loss over a wide spectral range for TE polarization., (© 2011 Optical Society of America)

The optical near-field technique is applied to provide a direct experimental observation of the refracted beam propagation inside a photonic crystal structure displaying a superprism effect. The obtained results show a 35° light beam angle deviation for a wavelength variation from 1500 to 1600 nm. The experimentally determined beam divergence is in good agreement with modeling predictions and previously performed transmittance experiments. A marked self-collimation propagation over a broad 20 nm wide spectral range centered at λ=1550 nm is experimentally demonstrated. The developed technique opens promising perspectives for the invisibility cloaking structures investigation.

A star coupler-based beam splitter for rib waveguides is reported. A design method is presented and applied in the case of silicon-on-insulator rib waveguides. Experimental results are in good agreement with simulations. Excess loss lower than 1 dB is experimentally obtained for star coupler lengths from 0.5 to 1 μm. Output balance is better than 1 dB, which is the measurement accuracy, and broadband transmission is obtained over 90 nm.

We investigate the room-temperature quantum-confined Stark effect in Ge/SiGe multiple quantum wells (MQWs) grown by low-energy plasma-enhanced chemical vapor deposition. The active region is embedded in a p-i-n diode, and absorption spectra at different reverse bias voltages are obtained from optical transmission, photocurrent, and differential transmission measurements. The measurements provide accurate values of the fraction of light absorbed per well of the Ge/SiGe MQWs. Both Stark shift and reduction of exciton absorption peak are observed. Differential transmission indicates that there is no thermal contribution to these effects.

We report new results about the improvement of delay-bandwidth product in photonic crystal slow light waveguides. Previous studies have obtained large delay-bandwidth product at the price of small average group index. It is pointed out here that the radius and the distance between the two boundary rows of holes have a key contribution for delay-bandwidth product. We show the possibility of improving this factor of merit meanwhile maintaining the same group index. We succeed in improving normal delay-bandwidth product from 0.15 to 0.35, keeping at the same time the group index unchanged at high value of 90. This optimization approach may be applicable for previous flat band slow light devices.

We report studies of optical Fabry-Perot microcavities based on semiconducting single-wall carbon nanotubes with a quality factor of 160. We experimentally demonstrate a huge photoluminescence signal enhancement by a factor of 30 in comparison with the identical film and by a factor of 180 if compared with a thin film containing non-purified (8,7) nanotubes. Furthermore, the spectral full-width at half-maximum of the photo-induced emission is reduced down to 8 nm with very good directivity at a wavelength of about 1.3 microm. Such results prove the great potential of carbon nanotubes for photonic applications.

We demonstrate a novel type of slow light photonic crystal waveguide which can produce unusual "U" type group index - frequency curves with constant group index n(g) over large bandwidth. By shifting the boundaries of this waveguide, flexible control of n(g) (10

This paper addresses the problem of a photonic crystal (PhC) superprism design for coarse wavelength division multiplexing (CWDM) application. The proposed solution consists in using a PhC structure that presents an efficient balance between the wavelength dispersion and the beam divergence. It is shown that a bidimensional rhombohedral lattice PhC displays both a high beam collimation and an important wavelength dependant angular dispersion. We report the design, fabrication and experimental demonstration of a 4-channel optical demultiplexer with a spectral spacing of 25 nm and a cross-talk level of better than -16 dB using a 2800 microm(2) PhC region. The minimum of insertion losses of the demultiplexer is less than 2 dB. The obtained results present an important milestone toward PhC devices for practical applications.

We report the experimental demonstration of a germanium metal-semiconductor-metal (MSM) photodetector integrated in a SOI rib waveguide. Femtosecond pulse and frequency experiments have been used to characterize those MSM Ge photodetectors. The measured bandwidth under 6V bias is about 25 GHz at 1.55 microm wavelength with a responsivity as high as 1 A/W. The used technological processes are compatible with complementary-metal-oxide-semiconductor (CMOS) technology.

Experimental results for refractive index variation induced by depletion in a silicon structure integrated in a PIN diode are reported. Thermal effect has been dissociated from the electrical contribution due to carrier density variation induced by a reverse bias voltage. A figure of merit V(pi)L(pi) of 3.1 V.cm has been obtained at 1.55mum. Numerical simulations show a good agreement between experimental and theoretical index variations.