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Circular microdisk mechanical resonators vibrating in their various resonance modes have emerged as important platforms for a wide spectrum of technologies including photonics, cavity optomechanics, optical metrology, and quantum optics. Optically transduced microdisk resonators made of advanced materials such as silicon carbide (SiC), diamond, and other wide- or ultrawide-bandgap materials are especially attractive. They are also of strong interest in the exploration of transducers or detectors for harsh environments and mission-oriented applications. Here we report on the first experimental investigation and analysis of energetic proton radiation effects on microdisk resonators made of 3C-SiC thin film grown on silicon substrate. We fabricate and study microdisks with diameters of ∼48 µm and ∼36 µm, and with multimode resonances in the ∼1 to 20 MHz range. We observe consistent downshifts of multimode resonance frequencies, and measure fractional frequency downshifts from the first three flexural resonance modes, up to ∼-3420 and -1660 ppm for two devices, respectively, in response to 1.8 MeV proton radiation at a dosage of 1014/cm2. Such frequency changes are attributed to the radiation-induced Young’s modulus change of ∼0.38% and ∼0.09%, respectively. These devices also exhibit proton detection responsivity of ℜ ≈ -5 to -6 × 10−6 Hz/proton. The results provide new knowledge of proton radiation effects in SiC materials, and may lead to better understanding and exploitation of micro/nanoscale devices for harsh-environment sensing, optomechanics, and integrated photonics applications.

Silicon photonics is considered to be an ideal solution as optical interconnect in radiation environments. Our previous study has demonstrated experimentally that radiation responses of device are related to waveguide size, and devices with thick top silicon waveguide layers are expected to be less sensitive to irradiation. Here, we design radiation-resistant arrayed waveguide gratings and Mach-Zehnder interferometers based on silicon-on-insulator with 3 µm-thick silicon optical waveguide platform. The devices are exposed to 60Co γ-ray irradiation up to 41 Mrad(Si) and 170-keV proton irradiation with total fluences from 1×1013 to 1×1016 p/cm2 to evaluate performance after irradiation. The results show that these devices can function well and have potential application in harsh radiation environments.