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Silicon nitride has great potential for integrated quantum photonics. We demonstrate monolithic integration of intrinsic quantum emitters in SiN with waveguides which show a room-temperature off-chip count rate of ~104 counts/s and clear antibunching behavior.

We demonstrate 300 percent increase of second-harmonic generation from Weyl semimetal TaAs surface by distributing plasmonic silver nanoantennas on TaAs. Normalizing laser spot size area over silver nanoantenna areas yields actual SHG enhancement is 90-fold.

We report on the generation of single-photon emitters in silicon nitride. We demonstrate monolithic integration of these quantum emitters with silicon nitride waveguides showing a room-temperature off-chip count-rate of ~104 counts/s and clear antibunching behavior.

We demonstrate 120-fold photoluminescence enhancement of VB- spin defects in hBN by coupling them to nanopatch antennas. Since the laser spot is 6.25 times larger than the antenna area, the actual enhancement is 750-fold.