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This study introduced design informatics using deep learning in a topological photonics system and applied it to a topological waveguide with a sharp bending structure to further reduce propagation loss. The sharp bend in the topological waveguide composed of two photonic crystals wherein dielectrics having C 6v symmetry were arranged in triangle lattices of hexagons, and the designing of parameters individually for 6 × 6 unit cells near the bending region using deep learning resulted in an output improvement of 60% compared to the initial structure. The proposed structural design method has high versatility and applicability for various topological photonic structures.

A defect structure is proposed for enhancing the coupling efficiency of vertically incident circularly polarized light in a topological waveguide. In the topological edge-state waveguide based on triangle lattices of hexagons consisting of six nanoholes respecting C 6v symmetry in a silicon optical circuit, the vertical coupling rate is improved by removing the nanoholes from one hexagonal cell near the line. The coupling efficiency was evaluated with and without the defect structure. The introduced defect structure operates suitably for focused beams of left- and right-handed circularly polarized light, enhancing the optical communication wavelength bandwidth by up to 10 dB.

Optical waveguide theory is essential to the development of various optical devices. Although there are reports on the theory of optical waveguides with magneto-optical (MO) and magnetoelectric (ME) effects, a comprehensive theoretical analysis of waveguides considering these two effects has not yet been published. In this study, the conventional waveguide theory is extended by considering constitutive relations that account for both MO and ME effects. Using the extended waveguide theory, the propagation properties are also analyzed in a medium where metamaterials and magnetic materials are arranged such that MO and ME effects can be controlled independently. It has been confirmed that the interaction between MO and ME effects occurs depending on the arrangement of certain metamaterials and the direction of magnetization. This suggests a nonreciprocal polarization control that rotates the polarization in only one direction when propagating in plane wave propagation and enhances the nonreciprocal nature of the propagating waves in waveguide propagation.

We analyze a new type of photonic crystal fiber which consists of the core and cladding that distinct in topology by tuning the position of air holes in each hexagonal unit cell where the C 6v symmetry is respected. The p-d band inversion between the core and cladding leads to topological interface modes inside the band gap, which can propagate along the fiber with a nonzero momentum in perpendicular to the corss section of a fiber. The helical topological interface modes possess the pseudospin-momentum locking effect inherited from the corresonding two-dimensional photonic crystal characterized by the Z 2 topology. The wave functions for the topological interface modes are analytically studied and compared successfully to the numerical results, enlighting a novel way to use photonic crystal fiber to transfer information.

We propose a method for selectively propagating optical vortex modes with specific charge numbers in a photonic integrated circuit (PIC) by using a topological photonic system. Specifically, by performing appropriate band tuning in two photonic structures that comprise a topological waveguide, one specific electromagnetic mode at the Γ point of a band diagram can be excited. Based on theoretical analysis, we successfully propagated optical vortex modes with specific charge numbers over a wide range in the C band in the proposed topological waveguide. The proposed method could be useful in controlling optical vortex signals at the chip level in future orbital angular momentum multiplexing technologies.

Infrared refractive index is an indispensable parameter for various fields including infrared photonics. To date, critical-angle refractometers, V-block refractometers, and spectroscopic ellipsometry have been commonly used to measure the refractive index. Although every method has an accuracy of four decimal places for the refractive index, a measurable wavelength region is limited up to about 2 µm. In this study, we demonstrated a metamaterial infrared refractometer for determining broadband complex refractive index. Using the device, a broadband (40-120 THz; wavelength 2.5-7.5 µm) and high-precision(< 5 ×10 -3 ) complex refractive index of polymethyl methacrylate was measured for the first time.

We demonstrated a novel slow-light Si-wire waveguide combined with metamaterials, which can be easily integrated with other Si photonics devices. The slow-light effect can be produced simply by placing metamaterials at an appropriate position on a Si-wire waveguide. It was confirmed that the large group index of more than 40 could be obtained because of a steep and discontinuous change of dispersion relation near the resonance frequency of metamaterials.

Toward the realization of ultralow-power-consumption on-chip optical interconnection, two types of membrane-based GaInAs/InP p-i-n photodiodes were fabricated on Si host substrates by using benzocyclobutene bonding. A responsivity of 0.95 A/W was estimated with a conventional waveguide-type photodiode with an ∼30-μm-long absorption region. The fitting curves based on the experimental data indicated that an absorption efficiency above 90% could be achieved with a length of 10 μm. In addition, increased absorption per length of a photonic crystal waveguide-type photodiode was obtained because of the enhanced lateral optical confinement or the slow-light effect, enabling a further reduction in the device length.

We propose the concept of organic membrane photonic integrated circuits (OMPICs), which incorporate various functions needed for optical signal processing into a flexible organic membrane. We describe the structure of several devices used within the proposed OMPICs (e.g., transmission lines, I/O couplers, phase shifters, photodetectors, modulators), and theoretically investigate their characteristics. We then present a method of fabricating the photonic devices monolithically in an organic membrane and demonstrate the operation of transmission lines and I/O couplers, the most basic elements of OMPICs.

We analyzed two types of Mach-Zehnder plasmonic modulators on a silicon-on-insulator platform with a different furan-thiophene chromophore electro-optic polymer to compare to other reports. The metal-taper coupling structure and the metal-insulator-metal cross section in our design have been optimized based on the new material parameters. According to the simulation result, a modulator with a slot width of 50 nm and an on-off voltage of Vπ=20  V can be 21 μm long, leading to a total modulator loss of 15 dB, which is comparable to previously reported devices.

Low-power consumption directly-modulated lasers are a key device for on-chip optical interconnection. We fabricated a GaInAsP/InP membrane DFB laser that exhibited a low-threshold current of 0.21 mA and single-mode operation with a sub-mode suppression ratio of 47 dB at a bias current of 2 mA. A high modulation efficiency of 11 GHz/mA 1/2 was obtained. A 10 Gbit/s direct modulation using a non-return-to-zero 2 31 -1 pseudo-random bit sequence signal was performed with a bias current of 1 mA, which is the lowest bias current ever reported for direct modulation of a DFB laser. A bit-error rate of 10 -9 was successfully achieved.

The direct modulation characteristics of a membrane distributed feedback (DFB) laser on a silicon substrate were investigated. Enhancement of the optical confinement factor in the membrane structure facilitates the fabrication of a strongly index-coupled (κ(I) = 1500 cm(-1)) DFB laser with the cavity length of 80 µm and a threshold current of 270 µA. Small-signal modulation measurements yielded a -3dB bandwidth of 9.5 GHz at 1.03-mA bias current, with modulation efficiency of 9.9 GHz/mA(1/2), which is, to the best of our knowledge, the highest value among those reported for DFB lasers.

Photonic wire bonding (PWB) was used to achieve flexible chip-scale optical interconnection as a kind of 3D-freeform polymer waveguide based on the two-photon polymerization of SU-8. First, the fabrication conditions of PWB were determined for the two-photon absorption process, and the coupling structure between PWB and III-V optical components was numerically simulated in order to obtain high coupling efficiency. Then, using PWB, chip-to-chip optical transmission was realized between laser and detector chips located on a common Si substrate. We fabricated a 2.5-μm-wide PWB with 1:3 aspect ratio between two optical chips of 140-μm gap and achieved a connection loss of approximately 10 dB.

We fabricated GaInAsP/InP waveguide-integrated lateral-current-injection (LCI) membrane distributed feedback (DFB) lasers on a Si substrate by using benzocyclobutene (BCB) adhesive bonding for on-chip optical interconnection. The integration ofa butt-jointed built-in (BJB) GaInAsP passive waveguide was performed by organometallic vapor-phase epitaxy (OMVPE).By introducing a strongly index-coupled DFB structure with a 50-µm-long cavity, a threshold current of 230 µA was achieved for a stripe width of 0.8 µm under room-temperature continuous-wave (RT-CW) conditions. The maximum output power of 32 µW was obtained. The lasing wavelength and submode suppression ratio (SMSR) were 1534 nm and 28 dB, respectively, at a bias current of 1.2 mA.

With the goal of creating magneto-optical devices, we demonstrated forming nanostructures inside a substrate of cerium-substituted yttrium iron garnet (Ce:YIG) by means of direct laser writing. Laser irradiation changed both the optical and magnetic properties of Ce:YIG. The measurements showed that the refractive index was increased by 0.015 (about 0.7% change) and the magnetization property was changed from hard to soft to decrease the coercivity. This technology enables the formation of 3-dimensional optical and magnetic nanostructures in YIG and will contribute to the development of novel devices for optical communication and photonic integration.

We fabricated a novel lateral-current-injection-type distributed feedback (DFB) laser with amorphous-Si (a-Si) surface grating as a step to realize membrane lasers. This laser consists of a thin GaInAsP core layer grown on a semi-insulating InP substrate and a 30-nm-thick a-Si surface layer for DFB grating. Under a room-temperature continuous-wave condition, a low threshold current of 7.0 mA and high efficiency of 43% from the front facet were obtained for a 2.0-μm stripe width and 300-μm cavity length. A small-signal modulation bandwidth of 4.8 GHz was obtained at a bias current of 30 mA.