Search

Electrical and dielectric properties of Au/1% graphene (GP)+[Ca.sub.1.9][Pr.sub.0.1][Co.sub.4][O.sub.x] doped poly(vinyl alcohol)/n-Si structures have been investigated using the admittance spectroscopy method in the temperature and voltage ranges of 160-300 K and -4-5 V, respectively. Experimental results show that both the main electrical and dielectric parameters, such as barrier height ([Φ.sub.b]), depletion layer width ([W.sub.d]), series resistance ([R.sub.s]) of structure, real and imaginary parts of dielectric constant (ζ', ζ') and electric modulus (M' and M'), tanδ, and AC conductivity ([σ.sub.ac]) were found to be strong functions of temperature and applied bias voltage. M' and M' versus V plots have a peak at about 1V. While the peak position shifted towards negative biases, the magnitude of the peak decreases with increasing temperature. Such peak behavior in M' and M' can be attributed to the existence of particular density distribution profile interface states at the interfacial layer-n-Si interface and their reordering and restructure under external electric field and interface polarization. These peaks also indicated that the Au/1% GP+[Ca.sub.1.9][Pr.sub.0.1][Co.sub.4][O.sub.x] doped poly(vinyl alcohol)/n-Si structure exhibits relaxation phenomena. PACS Nos.: 73.61.Jc, 73.61.Ey, 77.84.Jd. En utilisant la spectroscopie d'admittance a des temperatures de 160 a 300 K et des voltages de -4 a +5 V, nous etudions les proprietes electriques et dielectriques de structures poly(vinyle alcool)/n-Si dopees au Au/1% graphene+[Ca.sub.1.9][Pr.sub.0.1][Co.sub.4][O.sub.x]. Les mesures montrent que les deux types de parametres, electriques et dielectriques, comme la hauteur de barriere ([Φ.sub.b]), la largeur de la couche de depletion ([W.sub.d]), la structure de resistance serie ([R.sub.s]), les parties reelle et imaginaire de la constante dielectrique (ζ', ζ') et les modules electriques (M' et M'), tanδ et la conductivite AC [σ.sub.ac], dependent tous fortement de la temperature et du voltage de polarisation. Les graphiques de M' et M' versus V ont un pic autour de 1 V. Alors que ce pic se deplace vers des valeurs negatives, sa hauteur diminue lorsque la temperature augmente. Un tel comportement du pic peut etre attribue a un profile de distribution de densite particulier d'etats inter-faciaux dans la couche inter-faciale/n-Si et leur rearrangement et restructuration sous un champ electrique externe et une polarisation d'interface. Ces pics indiquent aussi qu'existent des phenomenes de relaxation dans les structures etudiees ici. [Traduit par la Redaction], 1. Introduction Graphene (GP) is two-dimensional carbon material that has attracted considerable research interest because of its unique structure and fascinating properties [1], high room-temperature carrier mobility of 15000 [cm.sup.2][(Vs).sup.-1], [...]