29 results on '"Volovik, B. V."'
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2. The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm
3. Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range
4. Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots
5. Heteroepitaxial growth of InAs on Si: A new type of quantum dot
6. Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
7. Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures
8. InGaAs/GaAs structures with quantum dots in vertical optical cavities for wavelengths near 1.3 µm
9. Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
10. Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix
11. Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates
12. Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix
13. Effect of the quantum-dot surface density in the active region on injection-laser characteristics
14. Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
15. Lateral association of vertically coupled quantum dots
16. Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures
17. Effect of the growth parameters on the electron structure of quantum dots in InGaAs/GaAs heterostructures
18. 1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots
19. Optical properties of submonolayer germanium clusters formed by molecular-beam epitaxy in a silicon matrix
20. Photoluminescence from multilayer InAs/GaAs structures with quantum dots in the 1.3–1.4 μm wavelength range
21. Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 μm
22. Long-wavelength emission in InGaAsN/GaAs heterostructures with quantum wells
23. Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface
24. Investigation of the device characteristics of a low-threshold quantum-dot laser emitting at 1.9 µm
25. Lasing in submonolayer InAs/AlGaAs structures without external optical confinement
26. Operating characteristics and their anisotropy in a high-power laser (1.5 W, 300 K) with a quantum-dot active region
27. Photoluminescence of InSb quantum dots in GaAs and GaSb matrices
28. Low-threshold quantum-dot injection heterolaser emitting at 1.84 μm
29. Room-temperature lasing in structures with CdSe quantum islands in a ZnMgSSe matrix without external optical confinement
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