58 results on '"Tsatsul’nikov, A. F."'
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2. The study of lateral carrier transport in structures with InGaN quantum dots in the active region
3. Studies of the electron spectrum in structures with InGaN quantum dots using photocurrent spectroscopy
4. The optical properties of heterostructures with quantum-confined InGaAsN layers on a GaAs substrate and emitting at 1.3–1.55 μm
5. A study of carrier statistics in InGaN/Gan LED structures
6. Kinetics and inhomogeneous carrier injection in InGaN nanolayers
7. Optical and structural properties of InAs quantum dot arrays grown in an InxGa1−x As matrix on a GaAs substrate
8. Growth of AlGaN epitaxial layers and AlGaN/GaN superlattices by metal-organic chemical vapor deposition
9. Optical properties of MBE-grown ultrathin GaAsN insertions in GaAs matrix
10. Theoretical and experimental study of the effect of InAs growth rate on the properties of QD arrays in InAs/GaAs system
11. Structural and optical properties of InAs quantum dots in AlGaAs matrix
12. Optical properties of structures with ultradense arrays of Ge QDs in an Si matrix
13. High efficiency (ηD>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates
14. Effect of carrier localization on the optical properties of MBE-grown GaAsN/GaAs heterostructures
15. The influence of heat treatment conditions on the evaporation of defect regions in structures with InGaAs quantum dots in the GaAs matrix
16. 1.3 µm vertical microcavities with InAs/InGaAs quantum dots and devices based on them
17. The emission from the structures with arrays of coupled quantum dots grown by the submonolayer epitaxy in the spectral range of 1.3–1.4 µm
18. Stacked InAs/InGaAs quantum dot heterostructures for optical sources emitting in the 1.3 µm wavelength range
19. Lasing in the vertical direction in InGaN/GaN/AlGaN structures with InGaN quantum dots
20. Mechanisms of InGaAlAs solid solution decomposition stimulated by InAs quantum dots
21. Heteroepitaxial growth of InAs on Si: A new type of quantum dot
22. Long-wavelength emission in structures with quantum dots formed in the stimulated decomposition of a solid solution at strained islands
23. Lasing at a wavelength close to 1.3 µm in InAs quantum-dot structures
24. Lasing in the vertical direction in quantum-size InGaN/GaN multilayer heterostructures
25. Exciton waveguide and lasing in structures with superfine GaAs quantum wells and InAs submonolayer inclusions in an AlGaAs host
26. Influence of growth conditions on the formation and luminescence properties of InGaAs quantum dots in a Si matrix
27. Gain in injection lasers based on self-organized quantum dots
28. Photo-and electroluminescence in the 1.3-µm wavelength range from quantum-dot structures grown on GaAs substrates
29. Influence of composition and anneal conditions on the optical properties of (In, Ga)As quantum dots in an (Al, Ga)As matrix
30. Capacitance-voltage profiling of Au/n-GaAs Schottky barrier structures containing a layer of self-organized InAs quantum dots
31. Effect of the quantum-dot surface density in the active region on injection-laser characteristics
32. Optical orientation and alignment of excitons in quantum dots
33. Formation of InAs quantum dots in a GaAs matrix during growth on misoriented substrates
34. Arrays of strained InAs quantum dots in an (In Ga)As matrix, grown on InP substrates by molecular-beam epitaxy
35. Lateral association of vertically coupled quantum dots
36. Fine structure of excitonic levels in quantum dots
37. Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix
38. Optical properties of submonolayer CdSe-(Zn,Mg)(S,Se) structures
39. Thermal stability of vertically coupled InAs-GaAs quantum dot arrays
40. Influence of mismatch of the lattice parameters on the structural, optical, and transport properties of InGaAs layers grown by molecular beam epitaxy on InP(100) substrates
41. Modulation of a quantum well potential by a quantum-dot array
42. Special features of structural interaction in (AlGaIn)N/GaN heterostructures used as dislocation filters
43. MOCVD-grown AlGaN/GaN heterostructures with high electron mobility
44. Room-temperature photoluminescence at 1.55 μm from heterostructures with InAs/InGaAsN quantum dots on GaAs substrates
45. 1.55–1.6 μm electroluminescence of GaAs based diode structures with quantum dots
46. Multilayer structures with quantum dots in the InAs/GaAs system emitting at a wavelength of 1.3 μm
47. A spatially single-mode laser for a range of 1.25–1.28 μm on the basis of InAs quantum dots on a GaAs substrate
48. Gain characteristics of quantum-dot injection lasers
49. Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface
50. Investigation of MOVPE-grown GaN layers doped with As atoms
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