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Silicon carbide (SiC) wafers have attracted attention as a material for advanced power semiconductor device applications due to their high bandgap and stability at high temperatures and voltages. However, the inherent chemical and mechanical stability of SiC poses significant challenges in the chemical mechanical planarization (CMP) process, an essential step in reducing defects and improving surface flatness. SiC exhibits different mechanical and chemical properties depending on SiC terminal faces, affecting SiC oxidation behavior during the CMP process. Here, we investigate the process of oxide layer formation during the CMP process and how it relates to the SiC terminal faces. The results show that under the same conditions, the C-terminated face (C-face) exhibits higher oxidation reaction kinetics than the Si-terminated face (Si-face), forming an oxide layer of finer particles. Due to the different oxidation kinetic tendencies, the oxide layer formed on the C-face has a higher friction coefficient and more defects than the oxide layer formed on the Si-face. This results in a higher removal rate during CMP for the C-face than the Si-face. Furthermore, by controlling the physicochemical properties of the oxide film, high removal rates can be achieved by friction with the pad alone, without the need for nanoparticle abrasives., (© 2023. The Author(s).)

In this report, the galvanic corrosion inhibition between Cu and Ru metal films is studied, based on bonding orbital theory, using pyridinecarboxylic acid groups which show different affinities depending on the electron configuration of each metal resulting from a π-backbonding. The sp 2 carbon atoms adjacent to nitrogen in the pyridine ring provide π-acceptor which forms a complex with filled d-orbital of native oxides on Cu and Ru metal film. The difference in the d-orbital electron density of each metal oxide leads to different π-backbonding strength, resulting in dense or sparse adsorption on native metal oxides. The dense adsorption layer is formed on native Cu oxide film due to the full-filled d-orbital electrons, which effectively suppresses anodic reaction in Cu film. On the other hand, only a sparse adsorption layer is formed on native Ru oxide due to its relatively weak affinity between partially filled d-orbital and pyridine groups. The adsorption behaviour is investigated through interfacial interaction analysis and electrochemical interaction evaluation. Based on this finding, the galvanic corrosion behaviour between Cu and Ru during chemical mechanical planarization (CMP) processing has been controlled., (© 2021. The Author(s).)

Water splitting, an efficient approach for hydrogen production, is often hindered by unfavorable kinetics of oxygen evolution reaction (OER). In order to reduce the overpotential, noble metal oxides-based electrocatalysts like RuO 2 and IrO 2 are usually utilized. However, due to their scarcity, the development of cost-effective non-precious OER electrocatalysts with high efficiency and good stability is urgently required. Herein, we report a facile one-step annealing of metal-organic frameworks (MOFs) strategy to synthesize N-doped graphene layers encapsulated NiFe alloy nanoparticles (NiFe@C). Through tuning the nanoparticle size and calcination temperature, NiFe@C with an average size of around 16 nm obtained at 700 °C exhibits superior OER performance with an overpotential of only 281 mV at 10 mA cm -2 and high durability. The facile synthesis method and excellent electrochemical performance show great potential of NiFe@C in replacing the precious metal-based electrocatalysts in the OER.

Lithium-sulfur batteries show great potential to compete with lithium-ion batteries due to the fact that sulfur can deliver a high theoretical capacity of 1672 mAh/g and a high theoretical energy density of 2500 Wh/kg. But it has several problems to be solved in order to achieve high sulfur utilization with high Coulombic efficiency and long cycle life of Li-S batteries. These problems are mainly caused by the dissoluble polysulfide species, which are a series of complex reduced sulfur products, associating with shuttle effect between electrodes as well as side reactions on lithium metal anode. To alleviate these challenges, we developed a sulfur-carbon nanotube (S/SWNT) composite coated with polyaniline (PANI) polymer as polysulfide block to achieve high sulfur utilization, high Coulombic efficiency, and long cycle life. The PANI coated S/SWNT composite showed a superior specific capacity of 1011 mAh/g over 100 cycles and a good rate retention, demonstrating the synergic contribution of porous carbon and conducting polymer protection to address challenges underlying sulfur cathode.

Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices to radio-frequency electronics and most forms of optoelectronics. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.