1. A hot-emitter transistor based on stimulated emission of heated carriers.
- Author
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Liu C, Wang XZ, Shen C, Ma LP, Yang XQ, Kong Y, Ma W, Liang Y, Feng S, Wang XY, Wei YN, Zhu X, Li B, Li CZ, Dong SC, Zhang LN, Ren WC, Sun DM, and Cheng HM
- Abstract
Hot-carrier transistors are a class of devices that leverage the excess kinetic energy of carriers. Unlike regular transistors, which rely on steady-state carrier transport, hot-carrier transistors modulate carriers to high-energy states, resulting in enhanced device speed and functionality. These characteristics are essential for applications that demand rapid switching and high-frequency operations, such as advanced telecommunications and cutting-edge computing technologies
1-5 . However, the traditional mechanisms of hot-carrier generation are either carrier injection6-11 or acceleration12,13 , which limit device performance in terms of power consumption and negative differential resistance14-17 . Mixed-dimensional devices, which combine bulk and low-dimensional materials, can offer different mechanisms for hot-carrier generation by leveraging the diverse potential barriers formed by energy-band combinations18-21 . Here we report a hot-emitter transistor based on double mixed-dimensional graphene/germanium Schottky junctions that uses stimulated emission of heated carriers to achieve a subthreshold swing lower than 1 millivolt per decade beyond the Boltzmann limit and a negative differential resistance with a peak-to-valley current ratio greater than 100 at room temperature. Multi-valued logic with a high inverter gain and reconfigurable logic states are further demonstrated. This work reports a multifunctional hot-emitter transistor with significant potential for low-power and negative-differential-resistance applications, marking a promising advancement for the post-Moore era., (© 2024. The Author(s).)- Published
- 2024
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