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Most of the magnetic devices in advanced electronics rely on the exchange bias effect, a magnetic interaction that couples a ferromagnetic and an antiferromagnetic material, resulting in a unidirectional displacement of the ferromagnetic hysteresis loop by an amount called the 'exchange bias field'. Setting and optimizing exchange bias involves cooling through the Néel temperature of the antiferromagnetic material in the presence of a magnetic field. Here we demonstrate an alternative process for the generation of exchange bias. In IrMn/FeCo bilayers, a structural phase transition in the IrMn layer develops at room temperature, exchange biasing the FeCo layer as it propagates. Once the process is completed, the IrMn layer contains very large single-crystal grains, with a large density of structural defects within each grain, which are promoted by the FeCo layer. The magnetic characterization indicates that these structural defects in the antiferromagnetic layer are behind the resulting large value of the exchange bias field and its good thermal stability. This mechanism for establishing the exchange bias in such a system can contribute towards the clarification of fundamental aspects of this exchange interaction.

In recent years, spin-orbit effects have been widely used to produce and detect spin currents in spintronic devices. The peculiar symmetry of the spin Hall effect allows creation of a spin accumulation at the interface between a metal with strong spin-orbit interaction and a magnetic insulator, which can lead to a net pure spin current flowing from the metal into the insulator. This spin current applies a torque on the magnetization, which can eventually be driven into steady motion. Tailoring this experiment on extended films has proven to be elusive, probably due to mode competition. This requires the reduction of both the thickness and lateral size to reach full damping compensation. Here we show clear evidence of coherent spin-orbit torque-induced auto-oscillation in micron-sized yttrium iron garnet discs of thickness 20 nm. Our results emphasize the key role of quasi-degenerate spin-wave modes, which increase the threshold current.

Repeatable magnetization reversal under purely electrical control remains the outstanding goal in magnetoelectrics. Here we use magnetic force microscopy to study a commercially manufactured multilayer capacitor that displays strain-mediated coupling between magnetostrictive Ni electrodes and piezoelectric BaTiO(3)-based dielectric layers. In an electrode exposed by polishing approximately normal to the layers, we find a perpendicularly magnetized feature that exhibits non-volatile electrically driven repeatable magnetization reversal with no applied magnetic field. Using micromagnetic modelling, we interpret this nominally full magnetization reversal in terms of a dynamic precession that is triggered by strain from voltage-driven ferroelectric switching that is fast and reversible. The anisotropy field responsible for the perpendicular magnetization is reversed by the electrically driven magnetic switching, which is, therefore, repeatable. Our demonstration of non-volatile magnetic switching via volatile ferroelectric switching may inspire the design of fatigue-free devices for electric-write magnetic-read data storage.

Nanofabrication has allowed the development of new concepts such as magnetic logic and race-track memory, both of which are based on the displacement of magnetic domain walls on magnetic nanostripes. One of the issues that has to be solved before devices can meet the market demands is the stochastic behaviour of the domain wall movement in magnetic nanostripes. Here we show that the stochastic nature of the domain wall motion in permalloy nanostripes can be suppressed at very low fields (0.6-2.7 Oe). We also find different field regimes for this stochastic motion that match well with the domain wall propagation modes. The highest pinning probability is found around the precessional mode and, interestingly, it does not depend on the external field in this regime. These results constitute an experimental evidence of the intrinsic nature of the stochastic pinning of domain walls in soft magnetic nanostripes.

Magnetoelectric coupling between magnetic and electrical properties presents valuable degrees of freedom for applications. The two most promising scenarios are magnetic-field sensors that could replace low-temperature superconducting quantum interference devices, and electric-write magnetic-read memory devices that combine the best of ferroelectric and magnetic random-access memory. The former scenario requires magnetically induced continuous and reversible changes in electrical polarization. These are commonly observed, but the coupling constants thus obtained are invalid for data-storage applications, where the more difficult to achieve and rarely studied magnetic response to an electric field is required. Here, we demonstrate electrically induced giant, sharp and persistent magnetic changes (up to 2.3 x 10(-7) s m(-1)) at a single epitaxial interface in ferromagnetic 40 nm La(0.67)Sr(0.33)MnO(3) films on 0.5 mm ferroelectric BaTiO(3) substrates. X-ray diffraction confirms strain coupling via ferroelastic non-180( composite function) BaTiO(3) domains. Our findings are valid over a wide range of temperatures including room temperature, and should inspire further study with single epitaxial interfaces.