Search

One or more embodiments of the present invention describe an apparatus and method to combine unequal powers. The apparatus includes a first input port, a second input port, and a combiner. The first input port is operably connected to a first power amplifier and is configured to receive a first power from the first power amplifier. The second input port is operably connected to a second power amplifier and is configured to receive a second power from the second power amplifier. The combiner is configured to simultaneously receive the first power from the first input port and the second power from the second input port. The combiner is also configured to combine the first power and second power to produce a maximized power. The first power and second power are unequal.

An optical tunable transmitter is used to transmit multiple radio frequency bands on a single beam. More specifically, a tunable laser is configured to generate a plurality of optical wavelengths, and an optical tunable transmitter is configured to modulate each of the plurality of optical wavelengths with a corresponding radio frequency band. The optical tunable transmitter is also configured to encode each of the plurality of modulated optical wavelengths onto a single laser beam for transmission of a plurality of radio frequency bands using the single laser beam.

One or more embodiments of the present invention describe an apparatus and method to combine unequal powers. The apparatus includes a first input port, a second input port, and a combiner. The first input port is operably connected to a first power amplifier and is configured to receive a first power from the first power amplifier. The second input port is operably connected to a second power amplifier and is configured to receive a second power from the second power amplifier. The combiner is configured to simultaneously receive the first power from the first input port and the second power from the second input port. The combiner is also configured to combine the first power and second power to produce a maximized power. The first power and second power are unequal.

As the demand for multiple radio frequency carrier bands continues to grow in space communication systems, the design of a cost-effective compact optical transmitter that is capable of transmitting selective multiple RF bands is of great interest, particularly for NASA Space Communications Network Programs. This paper presents experimental results that demonstrate the feasibility of a concept based on an optical wavelength division multiplexing (WDM) technique that enables multiple microwave bands with different modulation formats and bandwidths to be combined and transmitted all in one unit, resulting in many benefits to space communication systems including reduced size, weight and complexity with corresponding savings in cost. Experimental results will be presented including the individual received RF signal power spectra for the L, C, X, Ku, Ka, and Q frequency bands, and measurements of the phase noise associated with each RF frequency. Also to be presented is a swept RF frequency power spectrum showing simultaneous multiple RF frequency bands transmission. The RF frequency bands in this experiment are among those most commonly used in NASA space environment communications.

The advanced space radiation detector development team at NASA Glenn Research Center (GRC) has the goal of developing unique, more compact radiation detectors that provide improved real-time data on space radiation. The team has performed studies of different detector designs using a variety of combinations of solid-state detectors, which allow higher sensitivity to radiation in a smaller package and operate at lower voltage than traditional detectors. Integration of all of these detector technologies will result in an improved detector system in comparison to existing state-of-the-art (SOA) instruments for the detection and monitoring of the deep space radiation field.

In this innovation, the three-way combiner consists internally of two branch-line hybrids that are connected in series by a short length of waveguide. Each branch-line hybrid is designed to combine input signals that are in phase with an amplitude ratio of two. The combiner is constructed in an E-plane split-block arrangement and is precision machined from blocks of aluminum with standard WR-28 waveguide ports. The port impedances of the combiner are matched to that of a standard WR-28 waveguide. The component parts include the power combiner and the MMIC (monolithic microwave integrated circuit) power amplifiers (PAs). The three-way series power combiner is a six-port device. For basic operation, power that enters ports 3, 5, and 6 is combined in phase and appears at port 1. Ports 2 and 4 are isolated ports. The application of the three-way combiner for combining three PAs with unequal output powers was demonstrated. NASA requires narrow-band solid-state power amplifiers (SSPAs) at Ka-band frequencies with output power in the range of 3 to 5 W for radio or gravity science experiments. In addition, NASA also requires wideband, high-efficiency SSPAs at Ka-band frequencies with output power in the range of 5 to 15 W for high-data-rate communications from deep space to Earth. The three-way power combiner is designed to operate over the frequency band of 31.8 to 32.3 GHz, which is NASA s deep-space frequency band.

A novel Ka-band high efficiency asymmetric waveguide four-port combiner for coherent combining of two Monolithic Microwave Integrated Circuit (MMIC) Solid State Power Amplifiers (SSPAs) having unequal outputs has been successfully designed, fabricated and characterized over the NASA deep space frequency band from 31.8 to 32.3 GHz. The measured combiner efficiency is greater than 90 percent, the return loss greater than 18 dB and input port isolation greater than 22 dB. The manufactured combiner was designed for an input power ratio of 2:1 but can be custom designed for any arbitrary power ratio. Applications considered are NASA s space communications systems needing 6 to 10 W of radio frequency (RF) power. This Technical Memorandum (TM) is an expanded version of the article recently published in Institute of Engineering and Technology (IET) Electronics Letters.

The design, simulation, and characterization of a novel Ka-band (32.05 0.25 GHz) rectangular waveguide two-way branch-line hybrid unequal power combiner (with port impedances matched to that of a standard WR-28 waveguide) has been created to combine input signals, which are in phase and with an amplitude ratio of two. The measured return loss and isolation of the branch-line hybrid are better than 22 and 27 dB, respectively. The measured combining efficiency is 92.9 percent at the center frequency of 32.05 GHz. This circuit is efficacious in combining the unequal output power from two Ka-band GaAs pseudomorphic high electron mobility transistor (pHEMT) monolithic microwave integrated circuit (MMIC) power amplifiers (PAs) with high efficiency. The component parts include the branch-line hybrid-based power combiner and the MMIC-based PAs. A two-way branch-line hybrid is a four-port device with all ports matched; power entering port 1 is divided in phase, and into the ratio 2:1 between ports 3 and 4. No power is coupled to port 2. MMICs are a type of integrated circuit fabricated on GaAs that operates at microwave frequencies, and performs the function of signal amplification. The power combiner is designed to operate over the frequency band of 31.8 to 32.3 GHz, which is NASA's deep space frequency band. The power combiner would have an output return loss better than 20 dB. Isolation between the output port and the isolated port is greater than 25 dB. Isolation between the two input ports is greater than 25 dB. The combining efficiency would be greater than 90 percent when the ratio of the two input power levels is two. The power combiner is machined from aluminum with E-plane split-block arrangement, and has excellent reliability. The flexibility of this design allows the combiner to be customized for combining the power from MMIC PAs with an arbitrary power output ratio. In addition, it allows combining a low-power GaAs MMIC with a high-power GaN MMIC. The arbitrary port impedance allows matching the output impedance of the MMIC PA directly to the waveguide impedance without transitioning first into a transmission line with characteristic impedance of 50 ohms. Thus, by eliminating the losses associated with a transition, the overall SSPA efficiency is enhanced. For reducing the cost and weight when required in very large quantities, such as in the beam-forming networks of phased-array antenna systems, the combiner can be manufactured using metal-plated plastic. Two hybrid unequal power combiners can be cascaded to realize a non-binary combiner (for e.g., a three-way) and can be synergistically optimized for low VSWR (voltage standing wave ratio), low insertion loss, high isolation, and wide bandwidth using commercial off-the-shelf electromagnetic software design tools.

The design, simulation and characterization of a novel Ka-band (32.05 +/- 0.25 GHz) rectangular waveguide branchline hybrid unequal power combiner is presented. The manufactured combiner was designed to combine input signals, which are nearly in phase and with an amplitude ratio of two. The measured return loss and isolation of the branch-line hybrid are better than 22 and 27 dB, respectively. The application of the branch-line hybrid for combining two monolithic microwave integrated circuit (MMIC) power amplifiers with output power ratio of two is demonstrated. The measured combining efficiency is 92.9% at the center frequency of 32.05 GHz.

The design, simulation and characterization of a novel Ka-band (32.05 +/- 0.25 GHz) rectangular waveguide branch-line hybrid unequal power combiner is presented. The manufactured combiner was designed to combine input signals, which are in phase and with an amplitude ratio of two. The measured return loss and isolation of the branch-line hybrid are better than 22 and 27 dB, respectively. The application of the branch-line hybrid for combining two MMIC power amplifiers with output power ratio of two is demonstrated. The measured combining efficiency is approximately 93 percent over the above frequency band.

Numerical simulation results (with emphasis on channel temperature) for a single gate AlGaN/GaN High Electron Mobility Transistor (HEMT) with either a sapphire or SiC substrate are presented. The static I-V characteristics, with concomitant channel temperatures (T(sub ch)) are calculated using the software package ATLAS, from Silvaco, Inc. An in-depth study of analytical (and previous numerical) methods for the determination of T(sub ch) in both single and multiple gate devices is also included. We develop a method for calculating T(sub ch) for the single gate device with the temperature dependence of the thermal conductivity of all material layers included. We also present a new method for determining the temperature on each gate in a multi-gate array. These models are compared with experimental results, and show good agreement. We demonstrate that one may obtain the channel temperature within an accuracy of +/-10 C in some cases. Comparisons between different approaches are given to show the limits, sensitivities, and needed approximations, for reasonable agreement with measurements.

Wide-band power combining units for Ka-band are simulated for use as MMIC amplifier applications. Short-slot couplers as well as magic-tees are the basic elements for the combiners. Wide bandwidth (5 GHz) and low insertion (approx.0.2 dB) and high combining efficiencies (approx.90 percent) are obtained.

A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).

A simple technique to estimate the channel temperature of a generic AlGaN/GaN HEMTs on SiC or Sapphire, while incorporating temperature dependence of the thermal conductivity is presented. The procedure is validated b y comparing it's predictions with the experimentally measured temperatures in devices presented in three recently published articles.

BEMTs formed from Al(x)Ga(1-x)N/GaN heterostructures are being investigated for high RF power and efficiency around the world by many groups, both academic and industrial. In these devices, the 2DEG formation is dominated by both spontaneous and piezoelectric polarization fields, with each component having nearly the same order of magnitude. The piezoelectric portion is induced by the mechanical strain in the structure, and to analyze these devices, one must incorporate the stress/strain relationships, along with the standard semiconductor transport equations. These equations for Wurtzite GaN are not easily found in the open literature, hence this paper summarizes them, along with the constitutive equations for piezoelectric materials. The equations are cast into the format for the Wurtzite crystal class, which is the most common way GaN is grown epitaxially.

Gallium nitride (GaN) is a most promising wide band-gap semiconductor for use in high-power microwave devices. It has functioned at 320 C, and higher values are well within theoretical limits. By combining four devices, 20 W has been developed at X-band. GaN High Electron Mobility Transistors (HEMTs) are unique in that the two-dimensional electron gas (2DEG) is supported not by intentional doping, but instead by polarization charge developed at the interface between the bulk GaN region and the AlGaN epitaxial layer. The polarization charge is composed of two parts: spontaneous and piezoelectric. This behavior is unlike other semiconductors, and for that reason, no commercially available modeling software exists. The theme of this document is to develop a self-consistent approach to developing the pertinent equations to be solved. A Space Act Agreement, "Effects in AlGaN/GaN HEMT Semiconductors" with Silvaco Data Systems to implement this approach into their existing software for III-V semiconductors, is in place (summer of 2002).

Wireless sensors for high temperature industrial applications and jet engines require RF transmission lines and RF integrated circuits (RFICs) on wide bandgap semiconductors such as SiC. In this paper, the complex propagation constant of coplanar waveguide fabricated on semiinsulating 4H-SiC has been measured through 813 K. It is shown that the attenuation increases 3.4 dB/cm at 50 GHz as the SiC temperature is increased from 300 K to 813 K. Above 500 K, the major contribution to loss is the decrease in SiC resistivity. The effective permittivity of the same line increases by approximately 5 percent at microwave frequencies and 20 percent at 1 GHz.

This memorandum summarizes a study undertaken to apply the program MAFIA to the modeling of an electron gun in a traveling wave tube (TWT). The basic problem is to emit particles from the cathode in the proper manner. The electrons are emitted with the classical Maxwell-Boltzmann (M-B) energy distribution; and for a small patch of emitting surface; the distribution with angle obeys Lambert's law. This states that the current density drops off as the cosine of the angle from the normal. The motivation for the work is to extend the analysis beyond that which has been done using older codes. Some existing programs use the Child-Langmuir, or 3/2 power law, for the description of the gun. This means the current varies as the 3/2 power of the anode voltage. The proportionality constant is termed the perveance of the gun. This is limited, however, since the 3/2 variation is only an approximation. Also, if the cathode is near saturation, the 3/2 law definitely will not hold. In most of the older codes, the electron beam is decomposed into current tubes, which imply laminar flow in the beam; even though experiments show the flow to be turbulent. Also, the proper inclusion of noise in the beam is not possible. These older methods of calculation do, however, give reasonable values for parameters of the electron beam and the overall gun, and these values will be used as the starting point for a more precise particle-in-cell (PIC) calculation. To minimize the time needed for a given computer run, all beams will use the same number of particles in a simulation. This is accomplished by varying the mass and charge of the emitted particles (macroparticles) in a certain manner, to be consistent with the desired beam current.

This short paper is in response to one that appeared in this journal a few years ago [2]. The article was a comment on a previous paper [1], which presented the transformation equations between the standard two-port parameters. The equations were stated to be valid for complex terminations; which are useful when S-parameters are treated. The authors in [2] made some incorrect conclusions concerning the concept of "generalized scattering parameters", and this paper seeks to clarify the somewhat confusing area of generalized scattering parameters.

Experimental measurements of the dispersion characteristics of a C-band helix structure were carried out and compared to the dispersion characteristics found from a helix model using the three-dimensional electromagnetic computer code MAFIA. A conceptually novel design comprising a helical thread of the same pitch and inner diameter in a cylindrical waveguide also were calculated using the MAFIA code. The helical-groove structure exhibits a smaller bandwidth but at a much higher frequency range than the traditional helical structure for similar physical dimensions. It is physically more robust in construction. The interaction impedance also compares favorably with those of the conventional structure.

This reference publication introduces forward error correcting (FEC) and stresses definitions and basic calculations for use by engineers. The seven chapters include 41 example problems, worked in detail to illustrate points. A glossary of terms is included, as well as an appendix on the Q function. Block and convolutional codes are covered.

Report presents mathematical model for use in designing rocket-launching stand. Predicts pressure and thermal environment, as well as thermal responses of structures to impinging rocket-exhaust plumes. Enables relatively inexperienced analyst to determine time-varying distributions and absolute levels of pressure and heat loads on structures.

A Ku-band IMPATT oscillator with two distinct output power ports was injection-locked alternately at both ports. The transmission locking bandwidth was nearly the same for either port. The lower free running power port had a reflection locking bandwidth that was narrower than its transmission locking one. Just the opposite was found at the other port. A detailed analytical model for two-port injection-locked oscillators is presented, and its results agree quite well with the experiments. A critique of the literature on this topic is included to clear up misconceptions and errors. It is concluded that two-port injection-locked oscillators may prove useful in certain communication systems.

It is shown how the complete field of the electron beam may be incorporated into the transmission line model theory of the traveling wave tube (TWT). The fact that the longitudinal component of the field due to the bunched beam is not used when formulating the beam-to-circuit coupling equation is not well-known. The fundamental partial differential equation for the traveling wave field is developed and compared with the older (now standard) one. The equation can be solved numerically using the same algorithms, but now the coefficients can be updated continuously as the calculation proceeds down the tube. The coefficients in the older equations are primarily derived from preliminary measurements and some trial and error. The newer coefficients can be found by a recursive method, since each has a well defined physical interpretation and can be calculated once a reasonable first trial solution is postulated. The results of the new expression were compared with those of the older forms, as well as to a field theory model to show the ease in which a reasonable fit to the field prediction is obtained. A complete summary of the existing transmission line modeling of the TWT is given to explain the somewhat vague ideas and techniques in the general area of drifting carrier-traveling circuit wave interactions. The basic assumptions and inconsistencies of the existing theory and areas of confusion in the general literature are examined and hopefully cleared up.