Search

Using 0.25 micron gate-length High Electron Mobility Transistors (HEMTs), a two-stage amplifier has been developed that demonstrates the potential for high-gain, low-noise pre-amplification at K/sub a/ -band. The amplifier exhibits a noise figure of 4.0 dB with 16.5 dB gain at 37.5 GHz and under slightly different bias conditions shows flat gain of around 11.0 dB from 30.5-37.5 GHz.

High electron mobility transistors (HEMTs) have demonstrated unsurpassed transistor performance in the millimeter-wave range--at 60 GHz, results include a minimum noise figure of 2.3 dB with 4.0 dB associated gain, maximum small-signal gain of 11.7 dB, output power of 50 mW, power density of 0.43 W/mm and maximum power-added efficiency of 28%. The principles of HEMT operation and design are described, followed by a summary of the current state-of-the-art in noise and power performance, and discussion of several applications.