1. Fluorescent SiC as a new material for white LEDs
- Author
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Syväjärvi, Mikael, Müller, J., Sun, Jianwu, Grivickas, Vytautas, Ou, Yiyu, Jokubavicius, Valdas, Hens, Philip, Kaisr, M., Ariyawong, Kanaparin, Gulbinas, K., Liljedahl, Rickard, Linnarsson, M. K., Kamiyama, S., Wellmann, P., Spiecker, E., Ou, H., Syväjärvi, Mikael, Müller, J., Sun, Jianwu, Grivickas, Vytautas, Ou, Yiyu, Jokubavicius, Valdas, Hens, Philip, Kaisr, M., Ariyawong, Kanaparin, Gulbinas, K., Liljedahl, Rickard, Linnarsson, M. K., Kamiyama, S., Wellmann, P., Spiecker, E., and Ou, H.
- Abstract
Current III–V-based white light-emitting diodes (LEDs) are available. However, their yellow phosphor converter is not efficient at high currents and includes rare-earth metals, which are becoming scarce. In this paper, we present the growth of a fluorescent silicon carbide material that is obtained by nitrogen and boron doping and that acts as a converter using a semiconductor. The luminescence is obtained at room temperature, and shows a broad luminescence band characteristic of donor-to-acceptor pair recombination. Photoluminescence intensities and carrier lifetimes reflect a sensitivity to nitrogen and boron concentrations. For an LED device, the growth needs to apply low-off-axis substrates. We show by ultra-high-resolution analytical transmission electron microscopy using aberration-corrected electrons that the growth mechanism can be stable and that there is a perfect epitaxial relation from the low-off-axis substrate and the doped layer even when there is step-bunching., funding agencies|Angpanneforeningen Research Foundation||Richerts Foundation||Swedish Energy Agency||Nordic Energy Research||Swedish Research Council| 2009-5307 |Danish Council for Strategic Research| 09-072118 |German Ministry of Education and Research (Federal Ministry of Education and Research)| 03SF0393
- Published
- 2012
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