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In this paper, a fast hologram calculation method based on wavefront precise diffraction is proposed. By analyzing the diffraction characteristics of the object point on the 3D object, the effective viewing area of the reproduced image is analyzed. Based on the effective viewing area, the effective hologram size of the object point is obtained, and then the accurate diffraction calculation from the object point to the wavefront recording plane (WRP) is performed. By calculating all the object points on the recorded object, the optimized WRP of the whole 3D object can be obtained. The final hologram is obtained by calculating the diffraction light field from the WRP to the holographic plane. Compared with the traditional method, the proposed method can improve the calculation speed by more than 55%, while the image quality of the holographic 3D display is not affected. The proposed calculation method provides an idea for fast calculation of holograms and is expected to contribute to the development of dynamic holographic displays.

Ultraviolet-visible-near infrared broadband photodetectors have significant prospects in many fields such as image sensing, communication, chemical sensing, and day and nighttime surveillance. Hybrid one-dimensional (1D) and zero-dimensional (0D) materials are attractive for broadband-responsive photodetectors since its unique charges transfer characteristics and facile fabrication processes. Herein, a Si/ZnO nanowires/Ge quantum dots photodetector has been constructed via processes that combined electrospinning and spin-coating methods. A broadband response behavior from ultraviolet to near-infrared (from 250 to 1550 nm) is observed. The responsivity of the hybrid structure increases around three times from 550 to 1100 nm compared with the pure Si photodetector. Moreover, when the photodetector is illuminated by a light source exceeding 1100 nm, such as 1310 and 1550 nm, there is also a significant photoresponse. Additionally, the ZnO NWs/Ge quantum dots heterostructure is expected to be used in flexible substrates, which benefits from electrospinning and spin-coating processes. The strategy that combines 1D ZnO NWs and 0D solution-processed Ge QDs nanostructures may open a new avenue for flexible and broadband photodetector.