24 results on '"Wen, Dianzhong"'
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2. High-Performance Biomemristor Embedded with Graphene Quantum Dots
3. Artificial Synapses Based on an Optical/Electrical Biomemristor
4. Effects of Electronic Irradiation on the Characteristics of the Silicon Magnetic Sensitive Transistor
5. Physical Transient Photoresistive Variable Memory Based on Graphene Quantum Dots
6. Flexible Threshold-Type Switching Devices with Low Threshold and High Stability Based on Silkworm Hemolymph
7. Flexible Transient Resistive Memory Based on Biodegradable Composites
8. Physically Transient, Flexible, and Resistive Random Access Memory Based on Silver Ions and Egg Albumen Composites
9. Tunable Multilevel Data Storage Bioresistive Random Access Memory Device Based on Egg Albumen and Carbon Nanotubes
10. Dual-Tunable Memristor Based on Carbon Nanotubes and Graphene Quantum Dots
11. Flexible Nonvolatile Bioresistive Random Access Memory with an Adjustable Memory Mode Capable of Realizing Logic Functions
12. Li-Doping Effect on Characteristics of ZnO Thin Films Resistive Random Access Memory
13. Characteristics Research of a High Sensitivity Piezoelectric MOSFET Acceleration Sensor
14. Devices with Tuneable Resistance Switching Characteristics Based on a Multilayer Structure of Graphene Oxide and Egg Albumen
15. Fabrication and Characteristics of a Three-Axis Accelerometer with Double L-Shaped Beams
16. Characteristics of a Magnetic Field Sensor with a Concentrating-Conducting Magnetic Flux Structure
17. Fabrication and Characteristic of a Double Piezoelectric Layer Acceleration Sensor Based on Li-Doped ZnO Thin Film
18. Fabrication and Characterization of the Li-Doped ZnO Thin Films Piezoelectric Energy Harvester with Multi-Resonant Frequencies
19. Fabrication Technology and Characteristics Research of a Monolithically-Integrated 2D Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors
20. Fabrication Technology and Characteristics Research of the Acceleration Sensor Based on Li-Doped ZnO Piezoelectric Thin Films
21. Memristic Characteristics from Bistable to Tristable Memory with Controllable Charge Trap Carbon Nanotubes
22. Two-Dimensional Magnetic Field Sensor Based on Silicon Magnetic Sensitive Transistors with Differential Structure
23. Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction
24. Fabrication and Characteristics of an nc-Si/c-Si Heterojunction MOSFETs Pressure Sensor
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