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A fast calculation method for a full parallax high-resolution hologram is proposed based on elemental light field image (EI) rendering. A 3D object located near the holographic plane is firstly rendered as multiple EIs with a pinhole array. Each EI is interpolated and multiplied by a divergent sphere wave and interfered with a reference wave to form a hogel. Parallel acceleration is used to calculate the high-resolution hologram because the calculation of each hogel is independent. A high-resolution hologram with the resolution of 200,000 × 200,000 pixels is calculated within only eight minutes. Full parallax high-resolution 3D displays are realized by optical reconstructions.

We propose a dual-view integral imaging 3D display based on a multiplexed lens-array holographic optical element (MHOE). A MHOE is a volume holographic optical element obtained by multiplexing technology, which can be used for dual-view integral imaging 3D display due to the angle selectivity of the volume HOE. In the fabrication of the MHOE, two spherical wavefront arrays with different incident angles are recorded using photopolymer material. In the reconstruction, two projectors are used to project the elemental image arrays (EIA) with corresponding angles for two viewing zones. We have developed a prototype of the dual-view integral imaging display. The experimental results demonstrate the correctness of the theory.

In this paper, we propose a reflective augmented reality (AR) display system based on integral imaging (II) using a mirror-based pinhole array (MBPA). The MBPA, obtained by punching pinholes on a mirror, functions as a three-dimensional (3D) imaging device, as well as an image combiner. The pinhole array of MBPA can realize a pinhole array-based II display, while the mirror of MBPA can image the real objects, so as to combine the images of the real objects with the reconstructed 3D images. The structure of the proposed reflective AR display is very simple, and only a projection system or a two-dimensional display screen is needed to combine with the MBPA. In our experiment, a 25cm × 14cm sized AR display was built up, a combination of a 3D virtual image and a real 3D object was presented by the proposed AR 3D display. The proposed device could realize an AR display of large size due to its compact form factor and low weight.

The application of thinner cadmium sulfide (CdS) window layer is a feasible approach to improve the performance of cadmium telluride (CdTe) thin film solar cells. However, the reduction of compactness and continuity of thinner CdS always deteriorates the device performance. In this work, transparent Al2O3 films with different thicknesses, deposited by using atomic layer deposition (ALD), were utilized as buffer layers between the front electrode transparent conductive oxide (TCO) and CdS layers to solve this problem, and then, thin-film solar cells with a structure of TCO/Al2O3/CdS/CdTe/BC/Ni were fabricated. The characteristics of the ALD-Al2O3 films were studied by UV–visible transmittance spectrum, Raman spectroscopy, and atomic force microscopy (AFM). The light and dark J–V performances of solar cells were also measured by specific instrumentations. The transmittance measurement conducted on the TCO/Al2O3 films verified that the transmittance of TCO/Al2O3 were comparable to that of single TCO layer, meaning that no extra absorption loss occurred when Al2O3 buffer layers were introduced into cells. Furthermore, due to the advantages of the ALD method, the ALD-Al2O3 buffer layers formed an extremely continuous and uniform coverage on the substrates to effectively fill and block the tiny leakage channels in CdS/CdTe polycrystalline films and improve the characteristics of the interface between TCO and CdS. However, as the thickness of alumina increased, the negative effects of cells were gradually exposed, especially the increase of the series resistance (Rs) and the more serious “roll-over„ phenomenon. Finally, the cell conversion efficiency (η) of more than 13.0% accompanied by optimized uniformity performances was successfully achieved corresponding to the 10 nm thick ALD-Al2O3 thin film.