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Nanoscale oxides grown in c-silicon, implanted with low-energy (2 keV) H+ ions and fluences ranging from 1013 cm−2 to 1015 cm−2 by RF plasma immersion implantation (PII), have been investigated. The oxidation of the implanted Si layers proceeded in dry O2 at temperatures of 700 °C, 750 °C and 800 °C. The optical characterization of the formed Si/SiOx structures was conducted by electroreflectance (ER) and spectroscopic ellipsometric (SE) measurements. From the ER and SE spectra analysis, the characteristic energy bands of direct electron transitions in Si are elaborated. The stress in dependence on hydrogenation conditions is considered and related to the energy shifts of the Si interband transitions around 3.4 eV. Silicon oxides, grown on PII Si at a low H+ fluence, have a non-stoichiometric nature, as revealed by IR-SE spectra analysis, while with an increasing H+ fluence in the PII Si substrates and/or the subsequent oxidation temperature the stoichiometric Si-O4 units in the oxides become predominant. The development of surface morphology is studied by atomic force microscopy (AFM) imaging. Oxidation of the H+-implanted Si surface region flattens out the surface pits created on the Si surface by H+ implants. Based on the evaluation of the texture index and mean fractal dimension, the isotropic and self-similar character of the studied surfaces is emphasized.

Undoped and Zn-doped ITO (ITO:Zn) multifunctional thin films were successfully synthesized using the sol–gel and dipping method on three different types of substrates (glass, SiO2/glass, and Si). The effect of Zn doping on the optoelectronic, microstructural, and gas-sensing properties of the films was investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM), transmission electron microscopy (TEM), spectroscopic ellipsometry (SE), Raman spectroscopy, Hall effect measurements (HE), and gas testing. The results showed that the optical constants, the transmission, and the carrier numbers were correlated with the substrate type and with the microstructure and the thickness of the films. The Raman study showed the formation of ITO films and the incorporation of Zn in the doped film (ITO:Zn), which was confirmed by EDX analysis. The potential use of the multifunctional sol–gel ITO and ITO:Zn thin films was proven for TCO applications or gas-sensing experiments toward CO2. The Nyquist plots and equivalent circuit for fitting the experimental data were provided. The best electrical response of the sensor in CO2 atmosphere was found at 150 °C, with activation energy of around 0.31 eV.

We developed and applied a new calibration method to make more accurate measurements with our multi-color ellipsometric mapping tool made from cheap parts. Ellipsometry is an optical technique that measures the relative change in the polarization state of the measurement beam induced by reflection from or transmission through a sample. During conventional ellipsometric measurement, the data collection is relatively slow and measures one spot at a time, so mapping needs a long time compared with our new optical mapping equipment made by an ordinary color LED monitor and a polarization-sensitive camera. The angle of incidence and the incident polarization state is varied point by point, so a special optical calibration method is needed. Three SiO2 samples with different thicknesses were used for the point-by-point determination of the angle of incidence and rho (ρ) corrections. After the calibration, another SiO2 sample was measured and analyzed using the calibrated corrections; further, this sample was independently measured using a conventional spectroscopic ellipsometer. The difference between the two measured thickness maps is less than 1 nm. Our optical mapping tool made from cheap parts is faster and covers wider area samples relative to conventional ellipsometers, and these correction enhancements further demonstrate its performance.

HfS2 has recently emerged as a promising 2D semiconductor, but the lack of a reliable method to produce continuous films on a large scale has hindered its spreading. The atomic layer deposition of the material with the precursor tetrakis-dimethylamino-hafnium with H2S is a relatively novel solution to this problem. This paper shows that it is a facile approach to synthesizing homogeneous and smooth HfS2 layers in a controlled and reproducible manner. The deposition is examined at different temperatures and layer thicknesses, exploring the ALD window of the deposition and the chemical, morphological and electronic properties of the films. The method yielded films with wafer-sized uniformity and controlled properties and is, thus, a promising way to prepare this important transition metal dichalcogenide material.

Due to its remarkable switching effect in electrical and optical properties, VO2 is a promising material for several applications. However, the stoichiometry control of multivalent vanadium oxides, especially with a rational deposition technique, is still challenging. Here, we propose and optimize a simple fabrication method for VO2 rich layers by the oxidation of metallic vanadium in atmospheric air. It was shown that a sufficiently broad annealing time window of 3.0–3.5 h can be obtained at an optimal oxidation temperature of 400 °C. The presence of VO2 was detected by selected area diffraction in a transmission electron microscope. According to the temperature dependent electrical measurements, the resistance contrast (R30 °C/R100 °C) varied between 44 and 68, whereas the optical switching was confirmed using in situ spectroscopic ellipsometric measurement by monitoring the complex refractive indices. The obtained phase transition temperature, both for the electrical resistance and for the ellipsometric angles, was found to be 49 ± 7 °C, i.e., significantly lower than that of the bulk VO2 of 68 ± 6 °C.