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Over the past few years, sensors made from high-Z compound semiconductors have attracted quite some attention for use in applications which require the direct detection of X-rays in the energy range 30–100 keV. One of the candidate materials with promising properties is cadmium zinc telluride (CdZnTe). In the context of this article, we have developed pixelated sensors from CdZnTe crystals grown by Boron oxide encapsulated vertical Bridgman technique. We demonstrate the successful fabrication of CdZnTe pixel sensors with a fine pitch of 55 m and thickness of 1 mm and 2 mm. The sensors were bonded on Timepix readout chips to evaluate their response to X-rays provided by conventional sources. Despite the issues related to single-chip fabrication procedure, reasonable uniformity was achieved along with low leakage current values at room temperature. In addition, the sensors show stable performance over time at moderate incoming fluxes, below 106 photons mm−2s−1.

The analysis of γ-ray spectra can be an arduous task, especially in the case of room temperature semiconductor detectors, where several distortions and instrumental artifacts conceal the true spectral shape. We developed a genetic algorithm to perform the unfolding of γ-spectra in order to restore the true energy distribution of the incoming radiation. We successfully validated our approach on experimental spectra of four radionuclides (241Am, 57Co, 137Cs and 133Ba) acquired with two CdZnTe-based detectors with different contact geometries (single pixel and drift strip). The unfolded spectra consist of δ-like peaks in correspondence with the radiation emissions of each radioisotope.