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18 results on '"Moreno, Mario"'

10. Comparative Study on the Quality of Microcrystalline and Epitaxial Silicon Films Produced by PECVD Using Identical SiF4 Based Process Conditions

Author

Moreno, Mario, primary, Ponce, Arturo, additional, Galindo, Arturo, additional, Ortega, Eduardo, additional, Morales, Alfredo, additional, Flores, Javier, additional, Ambrosio, Roberto, additional, Torres, Alfonso, additional, Hernandez, Luis, additional, Vazquez-Leal, Hector, additional, Patriarche, Gilles, additional, and Cabarrocas, Pere Roca i, additional

Published
2021
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17. Semiempirical Two-Dimensional Model of the Bipolar Resistive Switching Process in Si-NCs/SiO 2 Multilayers.

Author

Ramirez-Rios J, González-Flores KE, Avilés-Bravo JJ, Pérez-García SA, Flores-Méndez J, Moreno-Moreno M, and Morales-Sánchez A

Abstract

In this work, the SET and RESET processes of bipolar resistive switching memories with silicon nanocrystals (Si-NCs) embedded in an oxide matrix is simulated by a stochastic model. This model is based on the estimation of two-dimensional oxygen vacancy configurations and their relationship with the resistive state. The simulation data are compared with the experimental current-voltage data of Si-NCs/SiO2 multilayer-based memristor devices. Devices with 1 and 3 Si-NCs/SiO2 bilayers were analyzed. The Si-NCs are assumed as agglomerates of fixed oxygen vacancies, which promote the formation of conductive filaments (CFs) through the multilayer according to the simulations. In fact, an intermediate resistive state was observed in the forming process (experimental and simulated) of the 3-BL device, which is explained by the preferential generation of oxygen vacancies in the sites that form the complete CFs, through Si-NCs.

Published
2023
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18. Digital and Analog Resistive Switching Behavior in Si-NCs Embedded in a Si/SiO 2 Multilayer Structure for Neuromorphic Systems.

Author

Morales-Sánchez A, González-Flores KE, Pérez-García SA, González-Torres S, Garrido-Fernández B, Hernández-Martínez L, and Moreno-Moreno M

Abstract

In this work, we report the digital and analog resistive-switching (RS) characteristics in a memristor based on silicon nanocrystals (Si-NCs) integrated into a complementary metal-oxide-semiconductor (MOS) structure. Si-NCs with a diameter of 5.48 ± 1.24 nm embedded in a SiO 2 /Si-NCs/SiO 2 multilayer structure acts as an RS layer. These devices exhibit bipolar RS with an intermediate resistance step during SET and RESET processes, which is believed to lie in the Si-NCs layer acting as charge-trapping nodes. The endurance studies of about 70 DC cycles indicate an ON/OFF ratio of ~10 6 and a retention time larger than 10 4 s. Long-term potentiation (LTP, -2 V) and long-term depression (LTD, +4 V) are obtained by applying consecutive identical pulse voltages of 150 ms duration. The current value gradually increases/decreases (LTP/LTD) as the pulse number increases. Three consecutive identical pulses of -2 V/150 ms (LTP) separated by 5 and 15 min show that the last current value obtained at the end of each pulse train is kept, confirming an analog RS behavior. These characteristics provide a possible way to mimic biological synapse functions for applications in neuromorphic computing in Si-NCs-based CMOS structures.

Published
2023
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