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Most medium entropy alloys (MEAs) exhibit excellent mechanical properties, but their applications are limited because of their high density. This study explores a series of lightweight nonequiatomic Ti65(AlCrNbV)35-xZrx (x = 3, 5, 7, and 10) MEAs with a low density, high strength, and high ductility. To achieve solid solution strengthening, Zr with a large atomic radius was used. In addition, various thermomechanical treatment parameters were adopted to further improve the MEAs’ mechanical properties. The density of the MEAs was revealed to be approximately 5 g/cm3, indicating that they were lightweight. Through an X-ray diffraction analysis, the MEAs were revealed to have a single body-centered cubic structure not only in the as-cast state but also after thermomechanical treatment. In terms of mechanical properties, all the as-cast MEAs with Zr additions achieved excellent performance (>1000 MPa tensile yield strength and 20% tensile ductility). In addition, hot rolling effectively eliminated the defects of the MEAs; under a given yield strength, hot-rolled MEAs exhibited superior ductility relative to non-hot-rolled MEAs. Overall, the Ti65(AlCrNbV)28Zr7 MEAs exhibited an optimum combination of mechanical properties (yield strength > 1200 MPa, plastic strain > 15%) after undergoing hot rolling 50%, cold rolling 70%, and rapid annealing for 30 to 50 s (at a temperature of approximately 850 °C) with a heating rate of 15 K/s. With their extremely high specific yield strength (264 MPa·g/cm3) and high ductility (22%), the Ti65(AlCrNbV)28Zr7 MEAs demonstrate considerable potential for energy and transportation applications.

We prepared amorphous indium–gallium–zinc oxide (a-IGZO) thin films with various Ga content ratios and investigated their feasibility as the active channel layers of top-gate thin-film transistors (TFT). First, the 2-inch IGZO sputtering targets with stoichiometric ratios of InGaZn2O5, InGaZnO4, and InGa2ZnO5.5 were fabricated using In2O3, Ga2O3, and ZnO oxide powders as raw materials via sintering treatments at temperatures ranging from 900 °C to 1300 °C for 6 h or 8 h. X-ray diffraction analysis indicated that the InGaZn2O5 and InGaZnO4 targets are single-phase structures whereas the InGa2ZnO5.5 target is a two-phase structure. Hall effect measurement indicated that the a-InGaZn2O5 and a-InGaZnO4 layers possess a carrier concentration (N) of about 1019 cm−3 and a resistivity (ρ) of about 10−2 Ω·cm; however, the N of the a-InGa2ZnO5.5 layer is only 1017 cm−3, and the ρ is about 1 to 4 Ω·cm. Moreover, the a-InGaZn2O5 layer exhibited the highest Hall-effect mobility (μHall) of 21.17 cm2·V−1·sec−1. This indicated that the impedance of Ga3+ ions to carrier migration is the main factor affecting the electrical properties of a-IGZO layers. Ga content in the a-IGZO channel similarly affects the performance of the TFT devices prepared in this study. The annealing at 300 °C for 1 h in an ambient atmosphere was found to significantly improve the electrical properties of the TFT devices. The best performance was observed in the a-InGaZnO4 TFT sample subjected to post-annealing at 300 °C with Vth = −0.85 V, μFE = 8.46 cm2, V−1·sec−1, SS = 2.31, V·decade−1, and Ion/Ioff = 2.9 × 104.

Digital mammography has become a first-line diagnostic tool for clinical breast cancer screening due to its high sensitivity and specificity. Mammographic compression force is closely associated with image quality and patient comfort. Therefore, optimizing breast compression parameters is essential. Subjects were recruited for digital mammography and breast magnetic resonance imaging (MRI) within a month. Breast MRI images were used to calculate breast volume and volumetric breast density (VBD) and construct finite element models. Finite element analysis was performed to simulate breast compression. Simulated compressed breast thickness (CBT) was compared with clinical CBT and the relationships between compression force, CBT, breast volume, and VBD were established. Simulated CBT had a good linear correlation with the clinical CBT (R2 = 0.9433) at the clinical compression force. At 10, 12, 14, and 16 daN, the mean simulated CBT of the breast models was 5.67, 5.13, 4.66, and 4.26 cm, respectively. Simulated CBT was positively correlated with breast volume (r > 0.868) and negatively correlated with VBD (r < –0.338). The results of this study provides a subject-specific and evidence-based suggestion of mammographic compression force for radiographers considering image quality and patient comfort.

A novel lightweight Al-Ti-Cr-Mn-V medium-entropy alloy (MEA) system was developed using a nonequiatiomic approach and alloys were produced through arc melting and drop casting. These alloys comprised a body-centered cubic (BCC) and face-centered cubic (FCC) dual phase with a density of approximately 4.5 g/cm3. However, the fraction of the BCC phase and morphology of the FCC phase can be controlled by incorporating other elements. The results of compression tests indicated that these Al-Ti-Cr-Mn-V alloys exhibited a prominent compression strength (~1940 MPa) and ductility (~30%). Moreover, homogenized samples maintained a high compression strength of 1900 MPa and similar ductility (30%). Due to the high specific compressive strength (0.433 GPa·g/cm3) and excellent combination of strength and ductility, the cast lightweight Al-Ti-Cr-Mn-V MEAs are a promising alloy system for application in transportation and energy industries.

Transparent indium tin oxide (ITO) and cosputtered ITO-zinc oxide (ZnO) films’ contacts to an n-GaN epilayer were investigated. Both of these electrodes’ contact to the n-GaN epilayer showed Schottky behavior, although the contact resistance of the ITO-ZnO/n-GaN system was lower than that of the ITO/n-GaN system. By placing a thin Ti interlayer between the ITO-ZnO/n-GaN interface, nonalloyed ohmic contact was achieved. The inset Ti interlayer was both beneficial both for enhancing the outdiffusion of the nitrogen atoms at the surface of the n-GaN and suppressing the indiffusion of oxygen atoms from the surface of the ITO-ZnO to n-GaN. The figure-of-merit (FOM), evaluated from the specific contact resistance and optical property of the Ti/ITO-ZnO system’s contact to the n-GaN epilayer, was optimized further at an adequate thickness of the Ti interlayer.