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The use of strained substrates may overcome indium incorporation limits without inducing plastic relaxation in InGaN quantum wells, and this is particularly important for short-period InGaN/GaN superlattices. By incorporating elastic strain into these heterostructures, their optoelectronic behavior is modified. Our study employed density functional theory calculations to investigate the variation in the band-gap energy of short-period InGaN/GaN superlattices that comprise pseudomorphic quantum wells with a thickness of just one monolayer. Heterostructures with equibiaxially strained GaN barriers were compared with respective ones with relaxed barriers. The findings reveal a reduction of the band gap for lower indium contents, which is attributed to the influence of the highly strained nitrogen sublattice. However, above mid-range indium compositions, the situation is reversed, and the band gap increases with the indium content. This phenomenon is attributed to the reduction of the compressive strain in the quantum wells caused by the tensile strain of the barriers. Our study also considered local indium clustering induced by phase separation as another possible modifier of the band gap. However, unlike the substrate-controlled strain, this was not found to exert a significant influence on the band gap. Overall, this study provides important insights into the behavior of the band-gap energy of strained superlattices toward optimizing the performance of optoelectronic devices based on InGaN/GaN heterostructures.

We have explored the impact of elevated growth and annealing temperatures on the local interfacial structure of thin Fe(12 nm)/Pt(10 nm) spintronic bilayers, epitaxially grown on MgO (100), and their correlation to magnetization reversal and dynamics. Electron-beam evaporation growth and subsequent annealing at 450 °C causes significant roughening of the MgO/Fe interface with irregular steps and multilevel (100) MgO surface terraces. Consequently, threading dislocations emerging at the step edges propagated in the Fe layer and terminated at the Fe/Pt interface, which appears pitted with pits 1.5–3 nm deep on the Fe side. Most of the pits are filled with the overlying Pt, whereby others by ferrimagnetic Fe3O4, forming nanoparticles that occupy nearly 9% of the Fe/Pt interfacial area. Fe3O4 nanoparticles occur at the termination sites of threading dislocations at the Fe/Pt interface, and their population density is equivalent to the density of threading dislocations in the Fe layer. The morphology of the Fe/Fe3O4/Pt system has a strong impact on the magnetization reversal, enhancing the coercive field and inducing an exchange bias below 200 K. Furthermore, low-temperature spin pumping and inverse spin Hall effect voltage measurements reveal that below their blocking temperature the nanoparticles can influence the spin current transmission and the spin rectification effects.