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In this work, we present the novel application of SiNx stress-engineering techniques for the suppression of short-channel effects in AlGaN/GaN high-electron-mobility transistors (HEMTs), accompanied by a comprehensive analysis of the underlying mechanisms. The compressive stress SiNx passivation significantly enhances the barrier height at the heterojunction beneath the gate, maintaining it above the quasi-Fermi level even as Vds rises to 20 V. As a result, in GaN devices with a gate length of 160 nm, the devices with compressive stress SiNx passivation exhibit significantly lower drain-induced barrier lowering (DIBL) factors of 2.25 mV/V, 2.56 mV/V, 4.71 mV/V, and 3.84 mV/V corresponding to drain bias voltages of 5 V, 10 V, 15 V, and 20 V, respectively. Furthermore, as Vds increases, there is an insignificant degradation in transconductance, subthreshold swing, leakage current, or output conductance. In contrast, the devices with stress-free passivation show relatively higher DIBL factors (greater than 20 mV/V) and substantial degradation in pinch-off performance and output characteristics. These results demonstrate that the SiNx stress-engineering technique is an attractive technique to facilitate high-performance and high-reliability GaN-based HEMTs for radio frequency (RF) electronics applications.

In this work, the DC performance and RF characteristics of GaN-based high-electron-mobility transistors (HEMTs) using the SiNx stress-engineered technique were systematically investigated. It was observed that a significant reduction in the peak electric field and an increase in the effective barrier thickness in the devices with compressive SiNx passivation contributed to the suppression of Fowler–Nordheim (FN) tunneling. As a result, the gate leakage decreased by more than an order of magnitude, and the breakdown voltage (BV) increased from 44 V to 84 V. Moreover, benefiting from enhanced gate control capability, the devices with compressive stress SiNx passivation showed improved peak transconductance from 315 mS/mm to 366 mS/mm, along with a higher cutoff frequency (ft) and maximum oscillation frequency (fmax) of 21.15 GHz and 35.66 GHz, respectively. Due to its enhanced frequency performance and improved pinch-off characteristics, the power performance of the devices with compressive stress SiNx passivation was markedly superior to that of the devices with stress-free SiNx passivation. These results confirm the substantial potential of the SiNx stress-engineered technique for high-frequency and high-output power applications, which are crucial for future communication systems.

Background: The rupture of intracranial aneurysms (IAs) would result in subarachnoid hemorrhage with high mortality and disability. Predicting the risk of IAs rupture remains a challenge. Methods: This paper proposed an effective method for classifying IAs rupture status by integrating a PointNet-based model and machine learning algorithms. First, medical image segmentation and reconstruction algorithms were applied to 3D Digital Subtraction Angiography (DSA) imaging data to construct three-dimensional IAs geometric models. Geometrical parameters of IAs were then acquired using Geomagic, followed by the computation of hemodynamic clouds and hemodynamic parameters using Computational Fluid Dynamics (CFD). A PointNet-based model was developed to extract different dimensional hemodynamic cloud features. Finally, five types of machine learning algorithms were applied on geometrical parameters, hemodynamic parameters, and hemodynamic cloud features to classify and recognize IAs rupture status. The classification performance of different dimensional hemodynamic cloud features was also compared. Results: The 16-, 32-, 64-, and 1024-dimensional hemodynamic cloud features were extracted with the PointNet-based model, respectively, and the four types of cloud features in combination with the geometrical parameters and hemodynamic parameters were respectively applied to classify the rupture status of IAs. The best classification outcomes were achieved in the case of 16-dimensional hemodynamic cloud features, the accuracy of XGBoost, CatBoost, SVM, LightGBM, and LR algorithms was 0.887, 0.857, 0.854, 0.857, and 0.908, respectively, and the AUCs were 0.917, 0.934, 0.946, 0.920, and 0.944. In contrast, when only utilizing geometrical parameters and hemodynamic parameters, the accuracies were 0.836, 0.816, 0.826, 0.832, and 0.885, respectively, with AUC values of 0.908, 0.922, 0.930, 0.884, and 0.921. Conclusion: In this paper, classification models for IAs rupture status were constructed by integrating a PointNet-based model and machine learning algorithms. Experiments demonstrated that hemodynamic cloud features had a certain contribution weight to the classification of IAs rupture status. When 16-dimensional hemodynamic cloud features were added to the morphological and hemodynamic features, the models achieved the highest classification accuracies and AUCs. Our models and algorithms would provide valuable insights for the clinical diagnosis and treatment of IAs.

The piezoelectric thin film composed of single-crystal lithium niobate (LiNbO3) exhibits a remarkably high electromechanical coupling coefficient and minimal intrinsic losses, making it an optimal material for fabricating bulk acoustic wave resonators. However, contemporary first-order antisymmetric (A1) Lamb mode resonators based on LiNbO3 thin films face specific challenges, such as inadequate mechanical stability, limited power capacity, and the presence of multiple spurious modes, which restrict their applicability in a broader context. In this paper, we present an innovative design for A1 Lamb mode resonators that incorporates a support-pillar structure. Integration of support pillars enables the dissipation of spurious wave energy to the substrate, effectively mitigating unwanted spurious modes. Additionally, this novel approach involves anchoring the piezoelectric thin film to a supportive framework, consequently enhancing mechanical stability while simultaneously improving the heat dissipation capabilities of the core.

Achieving low conduction loss and good channel mobility is crucial for SiC MOSFETs. However, basic planar SiC MOSFETs provide challenges due to their high density of interface traps and significant gate-to-drain capacitance. In order to enhance the reverse recovery property of the device, a Schottky barrier diode (SBD) was added to the source contact area, the top of the current spreading region, of a trench-etched double-diffused SiC MOS (TED MOS). Two types of SBD structures were optimized to improve the electrical properties using 3D simulation software, “TCAD Silvaco”. During reverse recovery simulation, the carriers of the device were withdrawn from the SBD, indicating that the new design was effective. It also showed that the recovery properties of the new design depended on temperature, carrier lifetime, and the work functions of metals. All the new designs were evaluated in various circumstances to determine the trend. Ultimately, in high-speed switching circuits, the SiC TED MOS with SBD structure efficiently boosted switching speed, while reducing switching loss.

In this paper, DC, transient, and RF performances among AlGaN/GaN HEMTs with a no field plate structure (basic), a conventional gate field plate structure (GFP), and a double floating field plate structure (2FFP) were studied by utilizing SILVACO ATLAS 2D device technology computer-aided design (TCAD). The peak electric fields under the gate in drain-side can be alleviated effectively in 2FFP devices, compared with basic and GFP devices, which promotes the breakdown voltage (BV) and suppresses the current collapse phenomenon. As a result, the ON-resistance increase caused by the current collapse phenomena is dramatically suppressed in 2FFP ~19.9% compared with GFP ~49.8% when a 1 ms duration pre-stress was applied with Vds = 300 V in the OFF-state. Because of the discontinuous FP structure, more electric field peaks appear at the edge of the FFP stacks, which leads to a higher BV of ~454.4 V compared to the GFP ~394.3 V and the basic devices ~57.6 V. Moreover, the 2FFP structure performs lower a parasitic capacitance of Cgs = 1.03 pF and Cgd = 0.13 pF than those of the GFP structure (i.e., Cgs = 1.89 pF and Cgd = 0.18 pF). Lower parasitic capacitances lead to a much higher cut-off frequency (ft) of 46 GHz and a maximum oscillation frequency (fmax) of 130 GHz than those of the GFP structure (i.e., ft = 27 GHz and fmax = 93 GHz). These results illustrate the superiority of the 2FFP structure for RF GaN HEMT and open up enormous opportunities for integrated RF GaN devices.

This paper presents the principle, design, fabrication, and characterization of Molecular Electronic Transducer (MET) dual-axis tilt sensors. The proposed sensor has a 3D-printed cylindrical channel inserted with four double-band electrodes and partially filled with a liquid electrolyte. The double-band electrodes were fabricated by wire winding with a ~0.1 mm anode-cathode distance under controlled tension. It allows the electrode to become any 3D coil rather than a 2D structure by microfabrication and exhibits good repeatability (±10%). The tilting changes the electrolyte level and electrode-electrolyte contact area, resulting in Faradaic current changes. The x-axis and the y-axis sensitivity reach 0.121 V/° and 0.154 V/°, respectively.

With the slowdown of Moore’s law, many emerging electronic devices and computing architectures have been proposed to sustain the performance advancement of computing. Among them, the Ising machine is a non-von-Neumann solver that has received wide attention in recent years. It is capable of solving intractable combinatorial optimization (CO) problems, which are difficult to be solve using conventional digital computers. In fact, many CO problems can be mapped to finding the corresponding ground states of Ising model. At present, Ising machine prototypes based on different physical principles, such as emerging memristive oscillators, have been demonstrated, among which the Ising Hamiltonian solver based on the coupled oscillator network simultaneously holds the advantages of room-temperature operation, compact footprint, low power consumption, and fast speed to solution. This paper comprehensively surveys the recent developments in this important field, including the types of oscillators, the implementation principle of the Ising model, and the solver’s performance. Finally, methods to further improve the performance have also been suggested.

In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance. However, SJ MOSFET will turn on the parasitic diodes due to fast reverse recovery, further inducing severe oscillation in the reverse recovery of the device and the corresponding adverse effect on the circuit. In this study, a fast recovery vertical superjunction (SJ) MOSFET with n-Si and p-3C-SiC pillars was studied. Unlike other structures, such as the 4H-SiC superjunction UMOSFET with a heterojunction diode or the ultra-low recovery charge cell-distributed Schottky contacts SJ-MOSFET with integrated isolated NMOS, we introduce a Schottky barrier diode (SBD) on the source contact at the top of the n-Si pillar in the SJ-MOSFET to improve the device reverse recovery. The simulation software TCAD Silvaco was utilized to simulate the device properties. Compared with the conventional Si SJ, the proposed Si/SiC SJ with the Schottky barrier diode (SBD) connected demonstrated a lower reverse recovery charge, which was reduced by 90.5%, respectively. The waveform of the reverse recovery current demonstrates that the electrons in the device are withdrawn from SBD during reverse recovery, preventing the opening of the parasitic diode in the SJ MOSFET. Finally, another structure is illustrated to decrease the gate capacitance by introducing a thin p-base layer between the gate metal and N-Si pillar so that it can improve the switching characteristics of devices. The open-loss and off-loss of the improved device were reduced by 33% and 42.3%, respectively.

This paper studied an atomic layer etching (ALE) technique with a surface treatment function for InAlN/GaN heterostructures with AlN spacer layers. Various parameters were attempted, and 30 s O2 + 15 W BCl3 was chosen as the optimal recipe. The optimal ALE approach exhibited satisfactory etching results, with regard to the etch-stop effect, compared with other techniques. The atomic force microscopy (AFM) results showed an etching per cycle (EPC) value of 0.15 nm/cycle, with a 0.996 fit coefficient and root mean square (RMS) surface roughness of around 0.61 nm (0.71 nm for as-grown sample), which was the lowest in comparison with digital etching (0.69 nm), Cl2/BCl3 continuous etching (0.91 nm) and BCl3 continuous etching (0.89 nm). X-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy with energy dispersive X-ray spectroscopy measurements (STEM/EDS) verified the indium clustered phenomena at the bottom apex of V-pit defects in the epi structure of InAlN/GaN high electron mobility transistors (HEMTs) for the first time, in addition to the surface morphology optimization for the ALE under-etching technique used in this work. The resistor hall effect (Hall) and AFM measurements demonstrated that after 4 or 5 ALE cycles, the two-dimensional electron gas (2-DEG) density and RMS roughness were improved by 15% and 11.4%, respectively, while the sheet resistance (Rsh) was reduced by 6.7%, suggesting a good surface treatment function. These findings were important for realizing high-performance InAlN/GaN HEMTs.

The development of the IoT demands small, durable, remote sensing systems that have energy harvesters and storage. Various energy harvesters are developed, including piezoelectric, triboelectric, electromagnetic, and reverse-electrowetting-on-dielectric. However, integrating energy storage and sensing functionality receives little attention. This paper presents an electrochemical vibration sensor with a galvanic cell (Zn-Cu cell) as energy storage and a vibration transducer. The frequency response, scale factor, long-term response, impedance study, and discharge characteristics are given. This study proved the possibility of integrating energy storage and vibration sensing functionality with promising performance. The performance of the sensor halved within 74 min. The longevity of the sensor is short due to the spontaneous reactions and ions drained. The sensitivity can be restored after refilling the electrolyte. The sensor could be rechargeable by changing to a reversible electrochemical system such as a lead–acid cell in the future.

The effective spin Hamiltonian method has drawn considerable attention for its power to explain and predict magnetic properties in various intriguing materials. In this review, we summarize different types of interactions between spins (hereafter, spin interactions, for short) that may be used in effective spin Hamiltonians as well as the various methods of computing the interaction parameters. A detailed discussion about the merits and possible pitfalls of each technique of computing interaction parameters is provided.

This article reviews the development of a new category of motion sensors including linear and angular accelerometers and seismometers based on molecular electronic transducer (MET) technology. This technology utilizes a liquid not only as an inertial mass, but also as one of the main elements in the conversion of mechanical motion into electric current. The amplification process is similar to that in a vacuum triode. Therefore, it is possible to achieve signal amplification close to 108. Motion sensors demonstrating wide frequency and dynamic range and sensitivity that are one to two orders of magnitude better than MEMS devices of the same size have been developed.

The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1) metal preparation method; (2) asymmetric conductance; (3) annealing effect; (4) interfaces impact.

AlGaN/GaN high electron mobility transistor (HEMT)-sensor with a catalytic Pt-gate is fabricated and tested for toxic H2S gas detection. AlGaN/GaN was chosen to extend the sensor detection range and to be able to operate at temperatures beyond those allowed by state-of-art Si-FET sensors. Testing was performed using a gas mixing apparatus in dry synthetic air ambient. High sensitivity, ΔI/I0, 8% for 80 ppm and 0.23% for 0.5 ppm H2S/air, is achieved at a temperature of 250 °C, with a corresponding ΔI of 617 μA and 18 μA, respectively, indicating suitability of the proposed sensor for industrial gas safety detectors.