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Your search keyword '"Fabien Clermidy"' showing total 2 results
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2 results on '"Fabien Clermidy"'

1. Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Author

Marc Bocquet, Hassen Aziza, Weisheng Zhao, Yue Zhang, Santhosh Onkaraiah, Christophe Muller, Marina Reyboz, Damien Deleruyelle, Fabien Clermidy, and Jean-Michel Portal

Subjects
compact modeling, RRAM, OxRAM, design, Applications of electric power, TK4001-4102
Abstract

Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming therefore conventional Flash memories. To fully explore new design concepts such as distributed memory in logic, OxRAM compact models have to be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we present compact models of the bipolar OxRAM memory based on physical phenomenons. This model was implemented in electrical simulators for single device up to circuit level.

Published
2014
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2. Compact Modeling Solutions for Oxide-Based Resistive Switching Memories (OxRAM)

Author

Yue Zhang, Hassen Aziza, Christophe Muller, Santhosh Onkaraiah, Weisheng Zhao, Fabien Clermidy, Damien Deleruyelle, Marc Bocquet, Jean-Michel Portal, Marina Reyboz, Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Institut d'électronique fondamentale (IEF), Université Paris-Sud - Paris 11 (UP11)-Centre National de la Recherche Scientifique (CNRS), Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), and Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU)

Subjects
Resistive touchscreen, Engineering, Hardware_MEMORYSTRUCTURES, business.industry, design, Oxide, lcsh:Applications of electric power, compact modeling, lcsh:TK4001-4102, RRAM, Power (physics), Resistive random-access memory, chemistry.chemical_compound, Flash (photography), chemistry, OxRAM, Resistive switching, Electronic engineering, Distributed memory, Electrical and Electronic Engineering, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, business
Abstract

International audience; Emerging non-volatile memories based on resistive switching mechanisms attract intense R&D efforts from both academia and industry. Oxide-based Resistive Random Acces Memories (OxRAM) gather noteworthy performances, such as fast write/read speed, low power and high endurance outperforming therefore conventional Flash memories. To fully explore new design concepts such as distributed memory in logic, OxRAM compact models have to be developed and implemented into electrical simulators to assess performances at a circuit level. In this paper, we present compact models of the bipolar OxRAM memory based on physical phenomenons. This model was implemented in electrical simulators for single device up to circuit level. J. Low Power Electron. Appl. 2014, 4 2

Published
2014
Full Text
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