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A carbon/carbon–Al–Cu composite reinforced with carbon fiber 2.5D-polyacrylonitrile-based preforms was fabricated using the pressureless infiltration technique. The Al–Cu alloy liquids were successfully infiltrated into the C/C composites at high temperature and under vacuum. The mechanical and metallographic properties, scanning electron microscopy (SEM), X-ray diffraction (XRD), and energy dispersive spectroscopy (EDS) of the C/C–Al–Cu composites were analyzed. The results showed that the bending property of the C/C–Al–Cu composites was 189 MPa, whereas that of the pure carbon slide material was only 85 MPa. The compressive strength of C/C–Al–Cu was 213 MPa, whereas that of the pure carbon slide material was only 102 MPa. The resistivity of C/C–Al–Cu was only 1.94 μΩm, which was lower than that of the pure carbon slide material (29.5 μΩm). This finding can be attributed to the “network conduction” structure. Excellent wettability was observed between Al and the carbon matrix at high temperature due to the existence of Al4C3. The friction coefficients of the C/C, C/C–Al–Cu, and pure carbon slide composites were 0.152, 0.175, and 0.121, respectively. The wear rate of the C/C–Al–Cu composites reached a minimum value of 2.56 × 10−7 mm3/Nm. The C/C–Al–Cu composite can be appropriately used as railway current collectors for locomotives.

In this paper, a method to obtain the CuInGaSe2 (CIGS) absorber layer with an appropriate selenium content is put forward, in which a Se-rich target is used to deposit a CIGS thin-film and this film is annealed in a Se-free inert atmosphere. The key issue of this method is the preparation of a Se-rich target with a homogeneous composition and a high-density. The formation mechanism of CuInSe2 and CuGaSe2 is investigated and the results point to the intermediate phase Cu2−xSe playing a role of a nucleation core. The sintering densification trajectory of the target with the addition of extra selenium is researched. Additionally, an effective way to avoid the sintering defects is proposed. Finally, a conversion efficiency of 11.2% for the CIGS solar cell is reached by sputtering from the obtained Se-rich target.