1. Optical Study on Temperature-Dependent Absorption Edge of γ -InSe-Layered Semiconductor.
- Author
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Wu, Wen-Te, Tiong, Kwong-Kau, Tan, Shih-Wei, Hu, Sheng-Yao, Lee, Yueh-Chien, Chen, Ruei-San, and Wu, Chia-Ti
- Subjects
ABSORPTION coefficients ,ENERGY function ,PHOTOCONDUCTIVITY ,X-ray diffraction ,SEMICONDUCTORS - Abstract
We have studied the variations in the temperature-dependent absorption edge of a bulk InSe-layered semiconductor using photoconductivity (PC) measurements. From both the X-ray diffraction (XRD) and Raman experimental results, the structural phase of the as-prepared InSe sample was confirmed to be γ-polytype. Upon heating from 15 K to 300 K, the absorption edge of PC spectra was found to shift significantly toward lower energy, and the absorption edge as a function of temperature was further analyzed by the Varshni's relationship and Bose–Einstein empirical equation. The Urbach energy as a function of temperature was obtained by fitting the absorption tail below the absorption coefficient of the PC spectrum, and the effective phonon energy can be derived from the temperature-dependent steepness parameter associated with Urbach energy. Our study indicates that the broadening of the absorption edge in the as-synthesized bulk γ-InSe is caused by a combination of electron/exciton–phonon interactions and thermal/structural disorder. [ABSTRACT FROM AUTHOR]
- Published
- 2024
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