Search

In this study, we comprehensively explored the electronic structure and optical properties of Ni-doped Bi4O5Br2 through first-principles computational calculations. By calculating its electronic structure and band characteristics, we investigated the impact of Ni doping on the photocatalytic performance of Bi4O5Br2. The computational results indicated that Ni doping significantly altered the band structure of Bi4O5Br2, leading to a reduction in the band gap width. The band gap for undoped Bi4O5Br2 was 2.151 eV, whereas the Ni-doped system exhibited a smaller band gap, directly indicating its enhanced visible light absorption capacity and facilitating the effective separation of photo-generated electron–hole pairs. Through analysis of 2D charge density maps, we observed changes in chemical bonding induced by Ni doping. The shortening of Ni-O bonds suggested increased bond strength, consistent with the observed reduction in cell volume. These findings provide a theoretical foundation for understanding the mechanisms behind the enhanced photocatalytic hydrogen production performance in Ni-doped Bi4O5Br2, offering valuable insights for the design and optimization of highly efficient photocatalytic materials. [ABSTRACT FROM AUTHOR]

The electronic, optical, and magnetic properties of Nd-doped ZnO systems were calculated using the DFT/GGA + U method. According to the results, the Nd dopant causes lattice parameter expansion, negative formation energy, and bandgap narrowing, resulting in the formation of an N-type degenerate semiconductor. Overlapping of the generated impurity and Fermi levels results in a significant trap effect that prevents electron-hole recombination. The absorption spectrum demonstrates a redshift in the visible region, and the intensity increased, leading to enhanced photocatalytic performance. The Nd-doped ZnO system displays ferromagnetic, with FM coupling due to strong spd-f hybridization through magnetic exchange interaction between the Nd-4f state and O-2p, Zn-4s, and Zn-3p states. These findings imply that Nd-doped ZnO may be a promising material for DMS spintronic devices. [ABSTRACT FROM AUTHOR]

Based on density functional theory (DFT), theoretical models of three kinds of lanthanide rare earth metal ion-doped γ-Bi2MoO6 were constructed (Ln-BMO (Ln=Gd, Ho, Yb)). The geometric structure, electronic structure, and optical properties of the model were calculated, and the influence of doped Ln3+ ions on the structures and properties of the system was analyzed. The results revealed that the substitution of smaller ionic radius Ln3+ ions for Bi3+ ions caused a contraction of the lattice parameters. At the same time, the contribution of the [Ln]4d near valence band and conduction band reduced the bandwidth of γ-Bi2MoO6, forming the Ln-O ionic bond with different strengths to obtain higher charge conductivity and charge-separation ability. Secondly, Ln3+ ions have a strongly ionic charge, which leads to the appearance of optical absorption bands in the infrared region and part of the visible region. This reduces the reflection in the visible region, improves the utilization rate, delays the loss of electron energy, and promotes phase matching in the visible region. And the Gd3+-doped system has better photocatalytic activity than the other Ln3+-doped system. This research provides theoretical insights into doped lanthanide rare earth ions and also provides strategies for the modification of γ-Bi2MoO6 nanomaterials. [ABSTRACT FROM AUTHOR]

Based on the density functional theory, the effect of rare-earth La doping at different concentrations on the electronic structure, optical properties, and magnetic properties of ZnO was calculated by using the GGA+U method under the condition of spin polarization. The calculation results show that the cell of a La-doped ZnO system is distorted, resulting in a formation energy less than zero, in which case it is easy to dope. After La doping, the band gap narrows, the Fermi level enters the conduction band, and the excess carriers induced by La atoms degenerate to form n-type degenerate semiconductor materials. In the visible light region, a blue shift in the optical absorption edge of the La-doped ZnO system causes an increased average static dielectric constant, stronger polarization ability, stronger binding ability on charges, and the photoconductivity of the doped ZnO system is improved. The magnetic moment of the La-doped ZnO system is zero, so it is not magnetic. [ABSTRACT FROM AUTHOR]

The first-principle calculation method based on the density functional theory (DFT) in combination with the LDA+U algorithm is employed to study the electronic structure and magnetic properties of Co/Mn co-doped ZnO nanowires. Special attention is paid to the optimal geometric replacement position, the coupling mechanism, and the magnetic origin of Co/Mn atoms. According to the simulation data, Co/Mn co-doped ZnO nanowires of all configurations exhibit ferromagnetism, and substitution of Co/Mn atoms for Zn in the (0001) inner layer brings nanowires to the ground state. In the magnetic coupling state, the obvious spin splitting is detected near the Fermi level, and strong hybridization effects are observed between the Co/Mn 3d and O 2p states. Moreover, the ferromagnetic ordering forming Co2+-O2−-Mn2+ magnetic path is established. In addition, the calculation results suggest that the magnetic moment mainly takes its origin from the Co/Mn 3d orbital electrons, and the size of the magnetic moment is related to the electronic configurations of Co/Mn atoms. Therefore, a realistic description of the electronic structure of Co/Mn co-doped ZnO nanowires, obtained via LDA+U method, shows their potential for diluted magnetic semiconductor materials. [ABSTRACT FROM AUTHOR]

The electronic structure, band structure, density of state, and magnetic properties of Ni-doped zinc-blende (ZB) ZnO are studied by using the first-principles method based on the spin-polarized density-functional theory. The calculated results show that Ni atoms can induce a stable ferromagnetic (FM) ground state in Ni-doped ZB ZnO. The magnetic moments mainly originate from the unpaired Ni 3d orbitals, and the O 2p orbitals contribute a little to the magnetic moments. The magnetic moment of a supercell including a single Ni atom is 0.79 μB. The electronic structure shows that Ni-doped ZB ZnO is a half-metallic FM material. The strong spin-orbit coupling appears near the Fermi level and shows obvious asymmetry for spin-up and spin-down density of state, which indicates a significant hybrid effects from the Ni 3d and O 2p states. However, the coupling of the anti-ferromagnetic (AFM) state show metallic characteristic, the spin-up and spin-down energy levels pass through the Fermi surface. The magnetic moment of a single Ni atom is 0.74 μB. Moreover, the results show that the Ni 3d and O 2p states have a strong p-d hybridization effect near the Fermi level and obtain a high stability. The above theoretical results demonstrate that Ni-doped zinc blende ZnO can be considered as a potential half-metal FM material and dilute magnetic semiconductors. [ABSTRACT FROM AUTHOR]