1. Operation Mechanism of a MoS2/BP Heterojunction FET
- Author
-
Byoung Hun Lee, Soo Cheol Kang, Tae Jin Yoo, Sung Kwan Lim, Hyeon Jun Hwang, and Sang Kyung Lee
- Subjects
Materials science ,band-to-band tunneling (BTBT) ,General Chemical Engineering ,02 engineering and technology ,black phosphorus ,2D/2D heterojunction ,01 natural sciences ,Black phosphorus ,Article ,law.invention ,lcsh:Chemistry ,chemistry.chemical_compound ,Depletion region ,law ,0103 physical sciences ,junction FET ,tunneling FET ,General Materials Science ,Tunneling current ,Molybdenum disulfide ,Quantum tunnelling ,010302 applied physics ,business.industry ,Transistor ,Heterojunction ,021001 nanoscience & nanotechnology ,tunneling diode ,lcsh:QD1-999 ,chemistry ,Subthreshold swing ,MoS2 ,Optoelectronics ,0210 nano-technology ,business - Abstract
The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS2/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 ×, 107, with a lower subthreshold swing of ~54 mV/dec and a 1fA level off current, its operating mechanism is closer to a junction field-effect transistor (FET) than a tunneling FET. The off-current of this device is governed by the depletion region in the BP layer, and the band-to-band tunneling current does not contribute to the rapid turn-on and extremely low off-current.
- Published
- 2018