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In this study, we fabricated deep ultraviolet (DUV) photodetectors based on perovskite thin films doped with halide materials using formamidinium bromide (FABr) and methylammonium iodide (MAI). The device was fabricated using a simple surface engineering technique by post-treating the MAPbI3 perovskite film with an FABr solution. This film acts as a light absorption layer, like a depletion layer with a p-i-n (PIN) structure, with n-type of SnO2-SDBS and p-type of spiro-OMeTAD. Adding 0.10 M MACl to the MAPbI3 precursor solution during the manufacturing process could effectively reduce the trap density compared with existing films. Films with MACl added in the two-step process can control a wide band gap and improve crystallinity. In addition, the Cl atom has a smaller atomic radius than iodine and a higher electronegativity of 3.16, which can improve phase stability, and the effect of the added Cl− increases the electron mobility of the perovskite, showing a fast response. [ABSTRACT FROM AUTHOR]

In this study, a perovskite-based mixed cation/anion ultraviolet photodetector with an added halide material is fabricated using perovskite combined with an ABX_3 structure. Mixed cation/anion perovskite thin films of MAPbI3/FABr are manufactured through a relatively simple solution process and employed as light-absorption layers. In the produced thin film, SnO2–sodium dodecylbenzenesulfonate acts as an electron transport layer and spiro-OMeTAD acts as a hole injection layer. Compared to a single cation/anion perovskite, the fabricated device exhibits phase stability and optoelectronic properties, and demonstrates a responsivity of 72.2 mA/W and a detectability of 4.67 × 1013 Jones. In addition, the films show an external quantum efficiency of 56%. This suggests that mixed cation/anion films can replace single cation/anion perovskite films. Thus, photodetectors based on lead halides that can be applied in various fields have recently been manufactured. [ABSTRACT FROM AUTHOR]