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Perovskite solar cells (PSCs) have garnered significant attention in the photovoltaic field owing to their exceptional photoelectric properties, including high light absorption, extensive carrier diffusion distance, and an adjustable band gap. Temperature is a crucial factor influencing both the preparation and performance of perovskite solar cells. The annealing temperature exerts a pronounced impact on the device structure, while the operational temperature influences carrier transport, perovskite band gap, and interface properties. This paper provides a comprehensive review of the influence of varied annealing temperatures on the hole transport layer, electron transport layer, and perovskite layer. Additionally, we present an overview of innovative annealing methods applied to perovskite materials. The effects of diverse working temperatures on the overall performance of perovskite cells are thoroughly examined and discussed in this review. In the end, different temperature conditions under ISOS testing conditions are summarized. [ABSTRACT FROM AUTHOR]