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Electrical and thermal transport measurements on quenched NaCl-type Ag1/3Pb1/3Sb1/3Se reveal an n-type semiconductor with a Seebeck coefficient up to −140 μVK−1 and a thermal conductivity as low as 0.52 WmK−1. Short-range order is indicated by disorder diffuse scattering in electron diffraction patterns. In contrast, 4L-Ag0.61Pb1.79Sb2.61Se6 (space group Cmcm with a = 4.2129(1) Å, b = 13.852(1) Å, and c = 20.866(1) Å, Z = 4) features the first lillianite-type structure in the system Ag/Pb/Sb/Se. It consists of slab-like NaCl-type building blocks that are interconnected via trigonal [PbSe6] prisms. As such structures typically do not form with Te as an anion, the first "sulfosalt-like" compound, Ag0.38Pb0.25Sb2.38Te4, in the system Ag/Pb/Sb/Te forms a layered tetradymite-like structure (space group R 3 - m with a = 4.2887(1) Å, c = 41.544(1) Å, Z = 3). Its slabs, which are separated by van der Waals gaps, are built up from three layers of distorted [MTe6] octahedra. Crystals of Ag0.38Pb0.25Sb2.38Te4 were grown by chemical transport. [ABSTRACT FROM AUTHOR]

The n-type semiconductor SnO2 with a wide band gap (3.6 eV) is massively used in gas-sensitive materials, but pure SnO2 still suffers from a high operating temperature, low response, and tardy responding speed. To solve these problems, we prepared small-sized pure SnO2 using hydrothermal and freeze-drying methods (SnO2-FD) and compared it with SnO2 prepared using a normal drying method (SnO2-AD). The sensor of SnO2-FD had an ultra-high sensitivity to NO2 at 100 °C with excellent selectivity and humidity stability. The outstanding gas sensing properties are attributed to the modulation of energy band structure and the increased carrier concentration, making it more accessible for electron exchange with NO2. The excellent gas sensing properties of SnO2-FD indicate its tremendous potential as a NO2 sensor. [ABSTRACT FROM AUTHOR]

BiVO4 is an important n-type semiconductor used in photocatalysis due to its high capacity to absorb solar light in the 400–700 nm range, abundance, high chemical stability, non-toxicity, and low cost. However, research on physicochemical modifications to increase its catalytic activity via simple procedures is limited. In this work, the influence of different synthesis parameters, such as calcination temperatures or silver doping, on the structural and physicochemical characteristic of the BiVO4-based photocatalysts and their photocatalytic performance in degrading sulfamethoxazole from aqueous solution under blue-LED irradiation was evaluated. BiVO4-based photocatalysts were synthesized using a solvothermal method. The monoclinic phase (m-s) was successfully kept stable even after the thermal treatments at 300, 450, and 600 °C and the corresponding silver doping. The low bandgap of 2.40 eV and the average particle size of 18 nm of the BiVO4 catalyst treated at 300 °C seems to be the key. Afte doping, Ag/BiVO4 photocatalyst treated at the optimal found calcination temperature (300 °C) showed the best photocatalytic behavior. [ABSTRACT FROM AUTHOR]

In this paper, synthetically scaled-up degenerately n-type doped indium tin oxide (Sn:In2O3) nanocrystals are described as highly transparent conductive materials possessing both optoelectronic and crystalline properties. With tin dopants serving as n-type semiconductor materials, they can generate free-electron carriers. These free electrons, vibrating in resonance with infrared radiation, induce strong localized surface plasmon resonance (LSPR), resulting in efficient infrared absorption. To commercialize products featuring Sn:In2O3 with localized surface plasmon resonance, a scaled-up synthetic process is essential. To reduce the cost of raw materials during synthesis, we aim to proceed with synthesis in a large reactor using industrial raw materials. Sn:In2O3 can be formulated into ink dispersed in solvents. Infrared-absorbing ink formulations can capitalize on their infrared absorption properties to render opaque in the infrared spectrum while remaining transparent in the visible light spectrum. The ink can serve as a security ink material visible only through infrared cameras and as a paint absorbing infrared light. We verified the transparency and infrared absorption properties of the ink produced in this study, demonstrating consistent characteristics in scaled-up synthesis. Due to potential applications requiring infrared absorption properties, it holds significant promise as a robust platform material in various fields. [ABSTRACT FROM AUTHOR]

High-performance photovoltaic devices require active photoanodes with superior optoelectric properties. In this study, we synthesized neodymium ruthenate, Nd2Ru2O7 (NRO), and gadolinium ruthenate pyrochlore oxides, Gd2Ru2O7 (GRO), via the solid-state reaction technique, showcasing their potential as promising candidates for photoanode absorbers to enhance the efficiency of dye-sensitized solar cells. A structural analysis revealed predominantly cubic symmetry phases for both materials within the Fd-3m space group, along with residual orthorhombic symmetry phases (Nd3RuO7 and Gd3RuO7, respectively) refined in the Pnma space group. Raman spectroscopy further confirmed these phases, identifying distinct active modes of vibration in the predominant pyrochlore oxides. Additionally, a scanning electron microscopy (SEM) analysis coupled with energy-dispersive X-ray spectroscopy (EDX) elucidated the morphology and chemical composition of the compounds. The average grain size was determined to be approximately 0.5 µm for GRO and 1 µm for NRO. Electrical characterization via I-V measurements revealed that these pyrochlore oxides exhibit n-type semiconductor behavior, with conductivity estimated at 1.5 (Ohm·cm)−1 for GRO and 4.5 (Ohm·cm)−1 for NRO. Collectively, these findings position these metallic oxides as promising absorber materials for solar panels. [ABSTRACT FROM AUTHOR]

Field effect transistors based on few-layered van der Waals transition metal halide (TMH) Nb3Cl8 are studied in this work. Few-layered Nb3Cl8 exhibits typical N-type semiconducting behavior controlled by a Si gate, with the electrical signal enhancing as the thickness increases from 4.21 nm to 16.7 nm. Moreover, we find that the tunability of few-layered Nb3Cl8 FETs' electrical transport properties can be significantly augmented through the use of an ionic liquid gate (or electrical double layer, EDL). This enhancement leads to a substantial increase in the on–off ratio by approximately a factor of 10 2 , with the transfer curve modulated into a bipolar fashion. The emergence of such bipolar tunable characteristics in Nb3Cl8 FETs serves to enrich the electronic properties within the transition metal halide family, positioning Nb3Cl8 as a promising candidate for diverse applications spanning transistors, logic circuits, neuromorphic computing and spintronics. [ABSTRACT FROM AUTHOR]

Silicon nitride (Si3N4) possesses excellent mechanical properties and high thermal conductivity, which is an important feature in many applications. However, achieving the theoretically high thermal conductivity of Si3N4 in practice is challenging. In this study, we adopted a first-principles calculation method to assess the effects of doping β-Si3N4 and γ-Si3N4 with carbon and oxygen atoms. Applying geometric structure optimization combined with calculation of the electronic phonon properties generated a stable doped structure. The results revealed that carbon and oxygen doping have little effect on the Si3N4 unit cell size, but that oxygen doping increases the unit cell volume. Energy band structure and state density calculation results showed that carbon doping reduces the nitride band gap width, whereas oxygen doping results in an n-type Si3N4 semiconductor. The findings from this study are significant in establishing a basis for targeted increase of the thermal conductivity of Si3N4. [ABSTRACT FROM AUTHOR]

Perylenetetracarboxylic diimide (PTCDI) is an n-type organic semiconductor molecule that has been widely utilized in numerous applications such as photocatalysis and field-effect transistors. Polarizability and dipole moment, which are inherent properties of molecules, are important parameters that determine their responses to external electric and optical fields, physical properties, and reactivity. These parameters are fundamentally important for the design of innovative materials. In this study, the effects of external electric fields on absorption and fluorescence spectra were investigated to obtain the PTCDI parameters. The PTCDI substituted by an octyl group (N,N′-Dioctyl-3,4,9,10-perylenedicarboximide) dispersed in a polymethyl methacrylate (PMMA) matrix was studied in this work. The features of vibronic progression in the absorption spectrum were analogous to those observed in solution. The red shift of the absorption band caused by the Stark effect was mainly observed in the presence of an external electric field. Changes in parameters such as the dipole moment and polarizability between the ground and the Franck–Condon excited states of the PTCDI monomer were determined. The fluorescence spectrum shows a contribution from a broad fluorescence band at wavelengths longer than the monomer fluorescence band. This broad fluorescence is ascribed to the excimer-like fluorescence of PTCDI. The effects of the electric field on the fluorescence spectrum, known as the Stark fluorescence or electrofluorescence spectrum, were measured. Fluorescence quenching is observed in the presence of an external electric field. The change in the polarizability of the monomer fluorescence band is in good agreement with that of the electroabsorption spectrum. A larger change in the polarizability was observed for the excimer-like fluorescence band than that for the monomer band. This result is consistent with exciton delocalization between PTCDI molecules in the excimer-like state. [ABSTRACT FROM AUTHOR]

This study involved direct doping of In2O3 into silicon carbide (SiC) powder, resulting in 8.0 at% In-doped SiC powder. Subsequently, heating at 500 °C was performed to form a target, followed by the utilization of electron beam (e-beam) technology to deposit the In-doped SiC thin films with the thickness of approximately 189.8 nm. The first breakthrough of this research was the successful deposition of using e-beam technology. The second breakthrough involved utilizing various tools to analyze the physical and electrical properties of In-doped SiC thin films. Hall effect measurement was used to measure the resistivity, mobility, and carrier concentration and confirm its n-type semiconductor nature. The uniform dispersion of In ions in SiC was as confirmed by electron microscopy energy-dispersive spectroscopy and secondary ion mass spectrometry analyses. The Tauc Plot method was employed to determine the Eg values of pure SiC and In-doped SiC thin films. Semiconductor parameter analyzer was used to measure the conductivity and the I-V characteristics of devices in In-doped SiC thin films. Furthermore, the third finding demonstrated that In2O3-doped SiC thin films exhibited remarkable current density. X-ray photoelectron spectroscopy and Gaussian-resolved spectra further confirmed a significant relationship between conductivity and oxygen vacancy concentration. Lastly, depositing these In-doped SiC thin films onto p-type silicon substrates etched with buffered oxide etchant resulted in the formation of heterojunction p-n junction. This junction exhibited the rectifying characteristics of a diode, with sample current values in the vicinity of 102 mA, breakdown voltage at approximately −5.23 V, and open-circuit voltage around 1.56 V. This underscores the potential of In-doped SiC thin films for various semiconductor devices. [ABSTRACT FROM AUTHOR]

As power sources for Internet-of-Things sensors, thermoelectric generators must exhibit compactness, flexibility, and low manufacturing costs. Stretchable and flexible painted thermoelectric generators were fabricated on Japanese paper using inks with dispersed p- and n-type single-walled carbon nanotubes (SWCNTs). The p- and n-type SWCNT inks were dispersed using the anionic surfactant of sodium dodecylbenzene sulfonate and the cationic surfactant of dimethyldioctadecylammonium chloride, respectively. The bundle diameters of the p- and n-type SWCNT layers painted on Japanese paper differed significantly; however, the crystallinities of both types of layers were almost the same. The thermoelectric properties of both types of layers exhibited mostly the same values at 30 °C; however, the properties, particularly the electrical conductivity, of the n-type layer increased linearly, and of the p-type layer decreased as the temperature increased. The p- and n-type SWCNT inks were used to paint striped patterns on Japanese paper. By folding at the boundaries of the patterns, painted generators can shrink and expand, even on curved surfaces. The painted generator (length: 145 mm, height: 13 mm) exhibited an output voltage of 10.4 mV and a maximum power of 0.21 μW with a temperature difference of 64 K at 120 °C on the hot side. [ABSTRACT FROM AUTHOR]

This study investigated the interfacial reactions between n-type Bi2(Te,Se)3 thermoelectric material, characterized by a highly-oriented (110) plane, and pure Sn and Sn-3.0Ag-0.5Cu (wt.%) solders, respectively. At 250 °C, the liquid-state Sn/Bi2(Te,Se)3 reactions resulted in the formation of both SnTe and BiTe phases, with Bi-rich particles dispersed within the SnTe phase. The growth of the SnTe phase exhibited diffusion-controlled parabolic behavior over time. In contrast, the growth rate was considerably slower compared to that observed with p-type (Bi,Sb)2Te3. Solid-state Sn/Bi2(Te,Se)3 reactions conducted between 160 °C and 200 °C exhibited similar interfacial microstructures. The SnTe phase remained the primary reaction product, embedded with tiny Bi-rich particles, revealing a diffusion-controlled growth. However, the BiTe layer had no significant growth. Further investigation into growth kinetics of intermetallic compounds and microstructural evolution was conducted to elucidate the reaction mechanism. The slower growth rates in Bi2(Te,Se)3, compared to the reactions with (Bi,Sb)2Te3, could be attributed to the strong suppression effect of Se on SnTe growth. Additionally, the interfacial reactions of Bi2(Te,Se)3 with Sn-3.0Ag-0.5Cu were also examined, showing similar growth behavior to those observed with Sn solder. Notably, compared with Ag, Cu tends to diffuse towards the interfacial reaction phases, resulting in a high Cu solubility within the SnTe phase. [ABSTRACT FROM AUTHOR]

Thermoelectric materials have drawn much attention over the last two decades due to the increase in global energy demand. However, designing efficient thermoelectrics reveals itself as a tough task for their properties (Seebeck coefficient, electrical conductivity, thermal conductivity) are mutually opposed. Hence, most recently, new design approaches have appeared, among which high-throughput methods have been implemented either experimentally or computationally. In this work, a high-throughput computer program has been designed to generate over 4000 structures based on a small set of complex layered chalcogenide compounds taken from the mAIVBVI nA2VB3VI homologous series, where AIV is Ge, AV is Sb and BVI is Te. The computer-generated structures have been investigated using density-functional theory methods, and the electronic and transport properties have been calculated. It has been found, using the quantum theory of atoms in molecules and crystals, that a wide variety of bond types constitutes the bonding network of the structures. All the structures are found to have negative formation energies. Among the obtained final structures, 43 are found with a wide band gap energy (>0.25 eV), 358 with semi-conductor/metal characteristics, and 731 with metallic characteristics. The transport properties calculations, using the Boltzmann equation, reveal that two p-type and 86 n-type structures are potentially promising compounds for thermoelectric applications. [ABSTRACT FROM AUTHOR]

Bismuth telluride (Bi2Te3)-based alloys have been extensively employed in energy harvesting and refrigeration applications for decades. However, commercially produced Bi2Te3-based alloys using the zone-melting (ZM) technique often encounter challenges such as insufficient mechanical properties and susceptibility to cracking, particularly in n-type Bi2Te3-based alloys, which severely limit the application scenarios for bismuth telluride devices. In this work, we seek to enhance the mechanical properties of n-type Bi2Te2.7Se0.3 alloys while preserving their thermoelectrical performance by a mixed mechanism of grain refinement and the TiN composite phase-introduced pinning effect. These nanoscale processes, coupled with the addition of TiN, result in a reduction in grain size. The pinning effects of nano-TiN contribute to increased resistance to crack propagation. Finally, the TiN-dispersed Bi2Te2.7Se0.3 samples demonstrate increased hardness, bending strength and compressive strength, reaching 0.98 GPa, 36.3 MPa and 74 MPa. When compared to the ZM ingots, those represent increments of 181%, 60% and 67%, respectively. Moreover, the thermoelectric performance of the TiN-dispersed Bi2Te2.7Se0.3 samples is identical to the ZM ingots. The samples exhibit a peak dimensionless figure of merit (ZT) value of 0.957 at 375 K, with an average ZT value of 0.89 within the 325–450 K temperature range. This work has significantly enhanced mechanical properties, increasing the adaptability and reliability of bismuth telluride devices for various applications, and the multi-effect modulation of mechanical properties demonstrated in this study can be applied to other thermoelectric material systems. [ABSTRACT FROM AUTHOR]

This work focuses on the synthesis and properties of quaternary ZnSnP2-yAsy chalcopyrite solid solutions. Full miscibility of the solid solution is achieved using ball milling followed by hot press sintering. The measured electrical conductivity increases substantially with As substitution from 0.03 S cm−1 for ZnSnP2 to 10.3 S cm−1 for ZnSnAs2 at 715 K. Band gaps calculated from the activation energies show a steady decrease with increasing As concentration from 1.4 eV for ZnSnP2 to 0.7 eV for ZnSnAs2. The Seebeck coefficient decreases significantly with As substitution from nearly 1000 μV K−1 for ZnSnP2 to −100 μV K−1 for ZnSnAs2 at 650 K. Thermal conductivity is decreased for the solid solutions due to alloy phonon scattering, compared to the end members with y = 0 and y = 2, with the y = 0.5 and y = 1.0 samples exhibiting the lowest values of 1.4 W m−1 K−1 at 825 K. Figure of merit values are increased for the undoped solid solutions at lower temperatures when compared to the end members due to the decreased thermal conductivity, with the y = 0.5 sample reaching zT = 1.6 × 10−3 and y = 1 reaching 2.1 × 10−3 at 700 K. The largest values of the figure of merit zT for the undoped series was found for y = 2 with zT = 2.8 × 10−3 at 700 K due to the increasing n-type Seebeck coefficient. Boltztrap calculations reveal that p-doping could yield zT values above unity at 800 K in case of ZnSnAs2, comparable with ZnSnP2. [ABSTRACT FROM AUTHOR]

Hafnium disulfide (HfS2) monolayer is one of the most promising two-dimensional (2D) materials for future nanoscale electronic devices, and patterning it into quasi-one-dimensional HfS2 nanoribbons (HfS2NRs) enables multi-channel architectures for field-effect transistors (FETs). Electronic, transport and ballistic device characteristics are studied for sub-7 nm-wide and ~15 nm-long zigzag HfS2NR FETs using non-equilibrium Green's functions (NEGF) formalism with density functional theory (DFT) and maximally localized Wannier functions (MLWFs). We provide an in-depth analysis of quantum confinement effects on ON-state performance. We show that bandgap and hole transport mass are immune to downscaling effects, while the ON-state performance is boosted by up to 53% but only in n-type devices. Finally, we demonstrate that HfS2NR FETs can fulfill the industry requirements for future technology nodes, which makes them a promising solution for FET architectures based on multiple nanosheets or nanowires. [ABSTRACT FROM AUTHOR]

In this paper, a theoretical model of the propagation of a shear horizontal wave in a piezoelectric semiconductor semi-infinite medium is established using the optimized spectral method. First, the basic equations of the piezoelectric semiconductor semi-infinite medium are derived with the consideration of biased electric fields. Then, considering the propagation of a shear horizontal wave in the piezoelectric semiconductor semi-infinite medium, two equivalent mathematical models are established. In the first mathematical model, the Schottky junction is theoretically treated as an electrically imperfect interface, and an interface characteristic length is utilized to describe the interface effect of the Schottky junction. To legitimately confirm the interface characteristic length, a second mathematical model is established, in which the Schottky junction is theoretically treated as an electrical gradient layer. Finally, the dispersion and attenuation curves of shear horizontal waves are numerically calculated using these two mathematical models to discuss the influence of the Schottky junction on the dispersion and attenuation characteristics of shear horizontal waves. Utilizing the equivalence of these two mathematical models and the above numerical results, the numerical value of the interface characteristic length is reliably legitimately confirmed; this value is independent of the thickness of the upper metal layer, the doping concentration of the lower n-type piezoelectric semiconductor substrate, and biasing electric fields. Only the biasing electric field parallel to the Schottky junction can provide an evident influence on the attenuation characteristics of shear horizontal waves and enhance the interface effect of the Schottky junction. Since the second mathematical model is also a validation of our previous mathematical model established through the state transfer equation method, some numerical results calculated using these two mathematical models are compared with those obtained using the previous method to verify the correctness and superiority of the research work presented in this paper. Since these two mathematical models can better calculate the dispersion and attenuation curves of high-frequency waves in micro- and nano-scale piezoelectric semiconductor materials, the establishment of mathematical models and the revelation of physical mechanisms are fundamental to the analysis and optimization of micro-scale resonators, energy harvesters, and amplifications. [ABSTRACT FROM AUTHOR]

The efficient synthesis of nanosheets containing two metal ions is currently a formidable challenge. Here, we attempted to dope lanthanide-based bimetals into porphyrin-based metal-organic skeleton materials (MOFs) by microwave-assisted heating. The results of the EDX, ICP, and XPS tests show that we have successfully synthesized porphyrin-based lanthanide bimetallic nanosheets (Tb-Eu-TCPP) using a household microwave oven. In addition, it is tested and experimentally evident that these nanosheets have a thinner thickness, a larger BET surface area, and higher photogenerated carrier separation efficiency than bulk porphyrin-based bimetallic materials, thus exhibiting enhanced photocatalytic activity and n-type semiconductor properties. Furthermore, the prepared Tb-Eu-TCPP nanomaterials are more efficient in generating single-linear state oxygen under visible light irradiation compared to pristine monometallic nanosheets due to the generation of bimetallic nodes. The significant increase in catalytic activity is attributed to the improved separation and transfer efficiency of photogenerated carriers. This study not only deepens our understanding of lanthanide bimetallic nanosheet materials but also introduces an innovative approach to improve the photocatalytic performance of MOFs. [ABSTRACT FROM AUTHOR]

This work reports on the properties of heterojunctions consisting of n-type Ga2O3 layers, deposited using ultrasonic spray pyrolysis at high temperature from water-based solution, combined with p-type NiO and Cu2O counterparts, deposited by radio frequency and reactive, direct-current magnetron sputtering, respectively. After a comprehensive investigation of the properties of the single layers, the fabricated junctions on indium tin oxide (ITO)-coated glass showed high rectification, with an open circuit voltage of 940 mV for Ga2O3/Cu2O and 220 mV for Ga2O3/NiO under simulated solar illumination. This demonstrates in praxis the favorable band alignment between the sprayed Ga2O3 and Cu2O, with small conduction band offset, and the large offsets anticipated for both energy bands in the case of Ga2O3/NiO. Large differences in the ideality factors between the two types of heterojunctions were observed, suggestive of distinctive properties of the heterointerface. Further, it is shown that the interface between the high-temperature-deposited Ga2O3 and the ITO contact does not impede electron transport, opening new possibilities for the design of solar cell and optoelectronic device architectures. [ABSTRACT FROM AUTHOR]

The newly prepared monolayer (ML) SiAs is expected to be a candidate channel material for next-generation nano-electronic devices in virtue of its proper bandgap, high carrier mobility, and anisotropic properties. The interfacial properties in ML SiAs field-effect transistors are comprehensively studied with electrodes (graphene, V2CO2, Au, Ag, and Cu) by using ab initio electronic structure calculations and quantum transport simulation. It is found that ML SiAs forms a weak van der Waals interaction with graphene and V2CO2, while it forms a strong interaction with bulk metals (Au, Ag, and Cu). Although ML SiAs has strong anisotropy, it is not reflected in the contact property. Based on the quantum transport simulation, ML SiAs forms n-type lateral Schottky contact with Au, Ag, and Cu electrodes with the Schottky barrier height (SBH) of 0.28 (0.27), 0.40 (0.47), and 0.45 (0.33) eV along the a (b) direction, respectively, while it forms p-type lateral Schottky contact with a graphene electrode with a SBH of 0.34 (0.28) eV. Fortunately, ML SiAs forms an ideal Ohmic contact with the V2CO2 electrode. This study not only gives a deep understanding of the interfacial properties of ML SiAs with electrodes but also provides a guide for the design of ML SiAs devices. [ABSTRACT FROM AUTHOR]

This paper thoroughly analyses the role of drift in the sensitive region in the single-event effect (SEE), with the aim of enhancing the single-particle radiation resistance of N-type metal-oxide semiconductor field-effect transistors (MOSFETs). It proposes a design for a Si-based device structure that extends the lightly doped source–drain region of the N-channel metal-oxide semiconductor (NMOS), thereby moderating the electric field of the sensitive region. This design leads to a 15.69% decrease in the charge collected at the leaky end of the device under the standard irradiation conditions. On this basis, a device structure is further proposed to form a composite metal-oxide semiconductor (MOS) by connecting a pn junction at the lightly doped source–drain end. By adding two charge paths, the leakage collection charge is further reduced by 13.85% under standard irradiation conditions. Moreover, the deterioration of the drive current in the purely growing lightly doped source–drain region can be further improved. Simulations of single-event effects under different irradiation conditions show that the device has good resistance to single-event irradiation, and the composite MOS structure smoothly converges to a 14.65% reduction in drain collection charge between 0.2 pC/ μ m and 1 pC/ μ m Linear Energy Transfer (LET) values. The incidence position at the source-to-channel interface collects the highest charge reduction rate of 28.23%. The collecting charge reduction rate is maximum, at 17.12%, when the incidence is at a 45-degree angle towards the source. [ABSTRACT FROM AUTHOR]

In this study, a two-electrode electrodeposition technique was employed to grow thin films of antimony selenide (Sb2Se3) on glass/fluorine-doped tin oxide (FTO) substrates. The highest quality thin films were consistently obtained within the range of 1600 mV to 1950 mV. Subsequent electrodeposition experiments were conducted at discrete voltages to produce various layers of thin films. Photoelectrochemical cell (PEC) measurements were performed to characterize the semiconductor material layers, leading to the identification of both p-Type and n-Type conductivity types. Optical absorption spectroscopic analysis revealed energy bandgap values ranging from 1.10 eV to 1.90 eV for AD-deposited Sb2Se3 samples and 1.08 eV to 1.68 eV for heat-treated Sb2Se3 samples, confirming the semiconducting nature of the Sb2Se3 material. Additionally, other characterization techniques, including X-ray diffraction analysis, reveal that the AD-deposited layers are almost amorphous, and heat treatment shows that the material is within the orthorhombic crystalline system. Heat-treated layers grown at ~1740 mV showed highly crystalline material with a bandgap nearing the bulk bandgap of Sb2Se3. Raman spectroscopy identified vibrational modes specific to the Sb2Se3 phase, further confirming its crystallinity. To explore the thin-film morphology, Scanning Electron Microscopy (SEM) was employed, revealing uniformly deposited material composed of grains of varying sizes at different voltages. Energy Dispersive X-ray analysis (EDX) confirmed the presence of antimony and selenium in the material layers. [ABSTRACT FROM AUTHOR]

Recently, heterostructured photocatalysts have gained significant attention in the field of photocatalysis due to their superior properties compared to single photocatalysts. One of the key advantages of heterostructured photocatalysts is their ability to enhance charge separation and broaden the absorption spectrum, thereby improving photocatalytic efficiency. Zinc oxide is a widely used n-type semiconductor with a proper photoelectrochemical activity. In this study, zinc oxide nanorod arrays were synthesized, and then the surfaces of ZnO nanorods were modified with the p-type semiconductor Co3O4 to create a p–n junction heterostructure. A significant increase in the photocurrent for the ZnO/Co3O4 composite, of 4.3 times, was found compared to pure ZnO. The dependence of the photocurrent on the morphology of the ZnO/Co3O4 composite allows for optimization of the morphology of the ZnO nanorod array to achieve improved photoelectrochemical performance. The results showed that the ZnO/Co3O4 heterostructure exhibited a photocurrent density of 3.46 mA/cm2, while bare ZnO demonstrated a photocurrent density of 0.8 mA/cm2 at 1.23 V. The results of this study provide a better understanding of the mechanism of charge separation and transfer in the heterostructural ZnO/Co3O4 photocatalytic system. Furthermore, the results will be useful for the design and optimization of photocatalytic systems for water splitting and other applications. [ABSTRACT FROM AUTHOR]

A 6500 V SiC trench MOSFET with integrated unipolar diode (UD-MOS) is proposed to improve reverse conduction characteristics, suppress bipolar degradation, and reduce switching loss. An N type base region under the trench dummy gate provides a low barrier path to suppress hole injection during the reverse conduction operation. The reverse conduction voltage VON is reduced to 1.11 V, and the reverse recovery charge (QRR) is reduced to 1.22 μC/cm2. The gate-to-drain capacitance (CGD) and gate-to-source capacitance (CGS) of the UD-MOS are also reduced to improve switching loss due to the thick oxide layer between the trench gate and dummy gate. The proposed device exhibits an excellent loss-related figure of merit (FOM). It provides a high-voltage SiC MOSFET prototype with potential performance advantages for voltage source converter-based high voltage direct current applications. [ABSTRACT FROM AUTHOR]

This article presents a detailed investigation of non-stoichiometric (Ti,Co)Ox thin films prepared using the Gas Impulse Magnetron Sputtering (GIMS) technique. The films were prepared with various Co contents (3 at.%, 19 at.%, 44 at.%, and 60 at.%) and characterized for their material composition, microstructure, and electrical properties. The films exhibited an ohmic behavior with linear current-voltage (I-V) characteristics, and their resistivity values ranged from approximately 10−3 to 104 Ω·cm. The highest resistivity was observed in the film with 3 at.% Co content. Thermoelectric measurements revealed that all of the prepared films displayed n-type semiconducting properties, with the Seebeck coefficient (S) tending close to zero. The resistivity of the films decreased as the temperature increased, affirming their semiconducting nature. The activation energy (Ea) values, determined using the Arrhenius formula, ranged from 0.0058 eV to 0.267 eV, with the highest Ea observed for films containing 3 at.% Co. Additionally, the films' surface topography and microstructure were examined through Atomic Force Microscopy (AFM) and optical profiler techniques. The results showed that the films had smooth, crack-free surfaces with remarkable homogeneity. The surface diversification decreased with the increase in cobalt in the (Ti,Co)Ox films. [ABSTRACT FROM AUTHOR]

Accurate and fast breath monitoring is of great importance for various healthcare applications, for example, medical diagnoses, studying sleep apnea, and early detection of physiological disorders. Devices meant for such applications tend to be uncomfortable for the subject (patient) and pricey. Therefore, there is a need for a cost-effective, lightweight, small-dimensional, and non-invasive device whose presence does not interfere with the observed signals. This paper reports on the fabrication of a highly sensitive human respiratory sensor based on silicon nanowires (SiNWs) fabricated by a top-down method of metal-assisted chemical-etching (MACE). Besides other important factors, reducing the final cost of the sensor is of paramount importance. One of the factors that increases the final price of the sensors is using gold (Au) electrodes. Herein, we investigate the sensor's response using aluminum (Al) electrodes as a cost-effective alternative, considering the fact that the electrode's work function is crucial in electronic device design, impacting device electronic properties and electron transport efficiency at the electrode–semiconductor interface. Therefore a comparison is made between SiNWs breath sensors made from both p-type and n-type silicon to investigate the effect of the dopant and electrode type on the SiNWs respiratory sensing functionality. A distinct directional variation was observed in the sample's response with Au and Al electrodes. Finally, performing a qualitative study revealed that the electrical resistance across the SiNWs renders greater sensitivity to breath than to dry air pressure. No definitive research demonstrating the mechanism behind these effects exists, thus prompting our study to investigate the underlying process. [ABSTRACT FROM AUTHOR]

Kenaf (Hibiscus cannabinus L.) is considered suitable for the remediation of cadmium (Cd)-contaminated farmlands, because of its large biomass and resistance to Cd stress. The addition of nitrogen (N) fertilizer is an important measure used to increase crop yields, and it may also affect Cd accumulation in plants. To clarify the effects of different forms and concentrations of N on plant growth and Cd absorption in kenaf, a hydroponic experiment was conducted using three N forms (NH4+–N, NO3−–N and urea–N) at four concentrations (0, 2, 4 and 8 mM, 0 mM as control) under Cd stress (30 μM). The plant growth, the antioxidant enzyme activity and the Cd contents of various parts of the kenaf seedlings were measured. The results showed that the N form had the greatest impact on the growth of the kenaf and the absorption and transport of the Cd, followed by the interaction effect between the N type and the concentration. Compared to the control, the addition of N fertilizer promoted the growth of kenaf to varying degrees. Among all the treatments, the use of 2 mM of NO3−–N enhanced the biomass and Cd accumulation to the greatest extent compared to CK from 2.02 g to 4.35 g and 341.30 μg to 809.22 μg per plant, respectively. The NH4+–N significantly reduced the Cd contents of different parts but enhanced the translocation factors of Cd stem to root (TF S/R) and leaf to stem (TF L/S) by 34.29~78.57% and 45.10~72.55%, respectively. The peroxidase (POD), superoxide dismutase (SOD) and catalase (CAT) enzyme activities of the kenaf increased with the N treatments, especially with NH4+–N. Overall, applying low concentrations of NO3−–N can better promote the extraction of Cd by kenaf. [ABSTRACT FROM AUTHOR]

Near-infrared (NIR) light has many applications in agriculture, transportation, medicine, the military, and other fields. Lead phthalocyanine (PbPc) exhibits excellent near-infrared (NIR) light absorption characteristics and is widely used in NIR-sensitive organic photodetectors. In this work, PbPc-based NIR organic phototransistors (OPTs) with different active layer structures were designed and fabricated. The photo-absorption characteristics of organic films, photosensitive properties, and air stability of the devices were investigated. The results suggested that (i) the bilayer planar heterojunction (PHJ) devices exhibit far better photosensitive performance than the single layer ones due to higher mobility of the formers than the latters; (ii) the bilayer PHJ ones with p-type channel have equivalent photosensitive performance to those with n-type channel owing to equivalent mobility, higher NIR absorption and lower exciton dissociation efficiency of the formers than the latters; (iii) the bilayer PHJ ones with p-type channel possess superior air stability to those with n-type channel thanks to better air stability of pentacene channel layer than C60 channel layer; (iv) the tri-layer PHJ ones perform better than the bilayer PHJ ones with p-type channel and exhibit a high photoresponsivity of 1415 mA/W and a maximum photo-to-dark current ratio of 1.2 × 104, and such an outstanding performance benefits from the virtues of tri-layer PHJ structure including high light absorption, carrier mobility and exciton dissociation efficiency; and (v) the air stability of the tri-layer PHJ ones is better than that of the bilayer PHJ ones with p-type channel, which can be attributed to the passivation of the top-level C60 layer. [ABSTRACT FROM AUTHOR]

The resistance and magnetoresistance of flexible thermoelectric p-type Sb2Te3-MWCNT, p-type Bi2Se3-MWCNT, and n-type Bi2Se3-MWCNT heterostructures were studied in the temperature range from 2 K to 300 K to reveal the conductance mechanisms governing the thermoelectric properties of these heterostructured networks. It was found that the conductance in heterostructured networks at different temperatures is governed by different processes and components of the networks. This effect was found to be related to the growth mechanisms of the Sb2Te3 and Bi2Se3 nanostructures on the MWCNT networks. At near-room temperatures, the Sb2Te3 and Bi2Se3 nanostructures were found to have the dominant contribution to the total conductance of the p-type Sb2Te3-MWCNT and n-type Bi2Se3-MWCNT networks. In turn, the conduction of p-type Bi2Se3-MWCNT heterostructured networks in a full temperature range and p-type Sb2Te3-MWCNT and n-type Bi2Se3-MWCNT heterostructured networks at temperatures below 30 K was governed by the MWCNTs; however, with the contribution from 2D topological states of Sb2Te3 and Bi2Se3 nanostructures, these were manifested by the weak antilocalization effect (WAL) cusps observed at temperatures below 5–10 K for all heterostructured networks considered in this work. [ABSTRACT FROM AUTHOR]

In this study, g-C3N4/BiOI/tourmaline composites were synthesized by loading BiOI and tourmaline on g-C3N4 nanofilms using g-C3N4, BiOI, and tourmaline as raw materials, aiming to optimize the photocatalytic degradation of amaranth red dye wastewater (AR). Single-factor experiments were conducted to optimize the degradation process. The findings indicate that a degradation rate of 95.88% can be achieved for AR within 150 min of light exposure, given a g-C3N4/BiOI/tourmaline dosage of 1 g/L, an initial pH level of 3 for the AR, and an initial AR concentration of 10 mg/L. Upon repeating the experiment for five cycles, the composite exhibited 83.10% activity, demonstrating its stability. Various analytical techniques were employed for material characterization: X-ray diffractometry (XRD) to ascertain the crystalline structure, field-emission scanning electron microscopy (FESEM) to evaluate morphology, X-ray photoelectron spectroscopy (XPS) for elemental analysis, ultraviolet–visible diffuse reflectance spectroscopy (UV-vis DRS) for optical properties, and photoluminescence (PL) spectroscopy to analyze the recombination of excited electrons and holes. Free radical masking experiments further elucidated the photocatalytic mechanism, revealing that the primary active species in the degradation process is the superoxide anion (O2−). This research offers a novel approach to address the limitations of n-type metal-free semiconductor photocatalysts. [ABSTRACT FROM AUTHOR]

Plasma doping (PLAD) technology is widely used in the semiconductor industry. One of the problems associated with PLAD is precise dosage control and monitoring during the doping process. Excessive boron doping into the n-type poly gate will affect the p-MOSFET threshold voltage. In this study, we develop a novel method for the real-time monitoring of the boron concentration as it penetrates into an oxide film. We attempted to determine whether the real-time monitoring of the boron concentration can be replaced by measuring the thickness of the damaged layer remaining after plasma doping and a cleaning process, since the thickness of the damaged layer can be measured relatively easily in real time by means of ellipsometry. It is found that as the plasma doping energy is increased, the boron concentration increases linearly, with a strong correlation (R2 = 0.98) between the plasma doping energy and the boron concentration. Moreover, there is a close relationship between the plasma doping energy and the thickness of the damaged layer. As the doping energy is increased, the thickness of the damaged layer also increases linearly. We also find a close correlation (R2 = 0.92) between the change in the thickness of the damaged layer and the p-MOSFET threshold voltage. In summary, there are very good correlations between the plasma doping energy and the concentration of boron, the doping energy and the thickness of the damaged layer, and the thickness of the damaged layer and the threshold voltage. It is proven that the concentration of boron penetrating into the oxide layer can be monitored by measuring the thickness of the damaged layer in real time. [ABSTRACT FROM AUTHOR]

The thermal properties and alignment of crystallinity of materials in thin films play crucial roles in the performance and reliability of various devices, especially in the fields of electronics, materials science, and engineering. The slight variations in the molecular packing of the active layer can make considerable differences in the optical and thermal properties. Herein, we aim to investigate the tuning of the physical properties of a blended thin film of n-type small organic molecules of perylene-3,4,9,10-tetracarboxylic acid (PTCA-SMs) with the mixing of the p-type polymer poly(3-hexylthiophene) (P3HT). The resulting thin films exhibit an enhanced surface crystallinity compared to the pristine material, leading to the formation of long crystallites, and these crystallites are thermally stable in the solid state, as confirmed by X-ray diffraction (XRD), atomic force microscopy (AFM), and thermal analysis using variable-temperature spectroscopic ellipsometry (VTSE) and differential scanning calorimetry (DSC). We believe that the crystalline structure of the obtained P3HT/PTCA-SMs blends is a combination of edge-on and face-on orientations, which enable the potential use of this material as an active layer in organic electronics. [ABSTRACT FROM AUTHOR]

The electronic, optical, and magnetic properties of Nd-doped ZnO systems were calculated using the DFT/GGA + U method. According to the results, the Nd dopant causes lattice parameter expansion, negative formation energy, and bandgap narrowing, resulting in the formation of an N-type degenerate semiconductor. Overlapping of the generated impurity and Fermi levels results in a significant trap effect that prevents electron-hole recombination. The absorption spectrum demonstrates a redshift in the visible region, and the intensity increased, leading to enhanced photocatalytic performance. The Nd-doped ZnO system displays ferromagnetic, with FM coupling due to strong spd-f hybridization through magnetic exchange interaction between the Nd-4f state and O-2p, Zn-4s, and Zn-3p states. These findings imply that Nd-doped ZnO may be a promising material for DMS spintronic devices. [ABSTRACT FROM AUTHOR]

Low-temperature synthesis of Bi2Se3 thin film semiconductor thermoelectric materials is prepared by the plasma-enhanced chemical vapor deposition method. The Bi2Se3 film demonstrated excellent crystallinity due to the Se-rich environment. Experimental results show that the prepared Bi2Se3 film exhibited 90% higher transparency in the mid-IR region, demonstrating its potential as a functional material in the atmospheric window. Excellent mobility of 2094 cm2/V·s at room temperature is attributed to the n-type conductive properties of the film. Thermoelectrical properties indicate that with the increase in Se vapor, a slight decrease in conductivity of the film is observed at room temperature with an obvious increase in the Seebeck coefficient. In addition, Bi2Se3 thin film showed an enhanced power factor of as high as 3.41 μW/cmK2. Therefore, plasma-enhanced chemical vapor deposition (PECVD)-grown Bi2Se3 films on Al2O3 (001) substrates demonstrated promising thermoelectric properties. [ABSTRACT FROM AUTHOR]

Commercial Peltier cooling devices and thermoelectric generators mostly use bismuth telluride-based materials, specifically its alloys with Sb2Te3 for the p-type legs and its alloys with Bi2Se3 for the n-type legs. If the p-type materials perform with zT well above the unity around room temperature, the n-type counterpart is lacking efficiency in this temperature range, and has the disadvantage of containing selenium. Indeed, despite the fact that selenium is not environmentally benign and that its handling requires precautions, the use of selenium does not facilitate the optimization of thermoelectric performance at or around room temperature, as the presence of selenium results in a larger band gap. In this study, we investigate the feasibility of a selenium-free n-type (Bi, Sb)2Te3 using a simple two-step process: mechanical alloying synthesis followed by spark plasma sintering. All the members of the solid solution Bi2−xSbxTe3 with x < 1 are n-type materials, with zTs between 0.35 and 0.6. The zT is maximized at lower temperatures with an increasing Sb content, which is proof that the band gap is reduced accordingly. We also show here that an edge-free sintering process considerably improves thermoelectric performance. [ABSTRACT FROM AUTHOR]

The development of n-type organic semiconductor materials for transporting electrons as part of logic circuits is equally important to the development of p-type materials for transporting holes. Currently, progress in research on n-type materials is relatively backward, and the number of polymers with high electron mobility is limited. As the core component of the organic field-effect transistor (OFET), the rational design and judicious selection of the structure of organic semiconductor materials are crucial to enhance the performance of devices. A novel conjugated copolymer with an all-acceptor structure was synthesized based on an effective chemical structure modification and design strategy. PDPPTT-2Tz was obtained by the Stille coupling of the DPPTT monomer with 2Tz-SnMe3, which features high molecular weight and thermal stability. The low-lying lowest unoccupied molecular orbital (LUMO) energy level of the copolymer was attributed to the introduction of electron-deficient bithiazole. DFT calculations revealed that this material is highly planar. The effect of modulation from a donor–acceptor to acceptor–acceptor structure on the improvement of electron mobility was significant, which showed a maximum value of 1.29 cm2 V−1 s−1 and an average value of 0.81 cm2 V−1 s−1 for electron mobility in BGBC-based OFET devices. Our results demonstrate that DPP-based polymers can be used not only as excellent p-type materials but also as promising n-type materials. [ABSTRACT FROM AUTHOR]

The data on electrical and photoelectric characteristics of Ga2O3/ZnGeP2 hetero-structures formed by RF magnetron sputtering Ga2O3 target with a purity of (99.99%) were obtained. The samples are sensitive to UV radiation with a wavelength of λ = 254 nm and are able to work offline as detectors of short-wave radiation. Structures with Ga2O3 film that was not annealed at 400 °C show weak sensitivity to long-wavelength radiation, including white light and near-IR (λ = 808 and 1064 nm). After annealing in an air environment (400 °C, 30 min), ZnGeP2 crystals in contact with Ga2O3 show n-type conductivity semiconductor properties, the sensitivity of Ga2O3/ZnGeP2 hetero-structures increases in the UV and IR ranges; the photovoltaic effect is preserved. Under λ = 254 nm illumination, the open-circuit voltage is fixed at positive potentials on the electrode to Ga2O3, the short-circuit current increases by three orders of magnitude, and the responsivity increases by an order of magnitude. The structures detect the photovoltaic effect in the near-IR range and are able to work offline (remotely) as detectors of long-wavelength radiation. [ABSTRACT FROM AUTHOR]

Tin oxide (SnO2) is a versatile n-type semiconductor with a wide bandgap of 3.6 eV that varies as a function of its polymorph, i.e., rutile, cubic or orthorhombic. In this review, we survey the crystal and electronic structures, bandgap and defect states of SnO2. Subsequently, the significance of the defect states on the optical properties of SnO2 is overviewed. Furthermore, we examine the influence of growth methods on the morphology and phase stabilization of SnO2 for both thin-film deposition and nanoparticle synthesis. In general, thin-film growth techniques allow the stabilization of high-pressure SnO2 phases via substrate-induced strain or doping. On the other hand, sol–gel synthesis allows precipitating rutile-SnO2 nanostructures with high specific surfaces. These nanostructures display interesting electrochemical properties that are systematically examined in terms of their applicability to Li-ion battery anodes. Finally, the outlook provides the perspectives of SnO2 as a candidate material for Li-ion batteries, while addressing its sustainability. [ABSTRACT FROM AUTHOR]

Donor-acceptor (D-A) copolymers containing perylene-3,4,9,10-tetracarboxydiimide (PDI) electron-acceptor (A) units belonging to n-type semiconductors are of interest due to their many potential applications in photonics, particularly for electron-transporting layers in all-polymeric or perovskite solar cells. Combining D-A copolymers and silver nanoparticles (Ag-NPs) can further improve material properties and device performances. Hybrid layers of D-A copolymers containing PDI units and different electron-donor (D) units (9-(2-ethylhexyl)carbazole or 9,9-dioctylfluorene) with Ag-NPs were prepared electrochemically during the reduction of pristine copolymer layers. The formation of hybrid layers with Ag-NP coverage was monitored by in-situ measurement of absorption spectra. The Ag-NP coverage of up to 41% was higher in hybrid layers made of copolymer with 9-(2-ethylhexyl)carbazole D units than in those made of copolymer with 9,9-dioctylfluorene D units. The pristine and hybrid copolymer layers were characterized by scanning electron microscopy and X-ray photoelectron spectroscopy, which proved the formation of hybrid layers with stable Ag-NPs in the metallic state with average diameters <70 nm. The influence of D units on Ag-NP diameters and coverage was revealed. [ABSTRACT FROM AUTHOR]

CdS thin films were grown on an FTO substrate at different temperatures, employing the low-cost hydrothermal method. All the fabricated CdS thin films were studied using XRD, Raman spectroscopy, SEM, PL spectroscopy, a UV–Vis spectrophotometer, photocurrent, Electrochemical Impedance Spectroscopy (EIS), and Mott–Schottky measurements. According to the XRD results, all the CdS thin films were formed in a cubic (zinc blende) structure with a favorable (111) orientation at various temperatures. The Scherrer equation was used to determine the crystal size of the CdS thin films, which varied from 25 to 40 nm. The SEM results indicated that the morphology of thin films seems to be dense, uniform, and tightly attached to the substrates. PL measurements showed the typical green and red emission peaks of CdS films at 520 nm and 705 nm, and these are attributable to free-carrier recombination and sulfur vacancies or cadmium vacancies, respectively. The optical absorption edge of the thin films was positioned between 500 and 517 nm which related to the CdS band gap. For the fabricated thin films, the estimated Eg was found to be between 2.50 and 2.39 eV. According to the photocurrent measurements, the CdS thin films grown were n-type semiconductors. As indicated by EIS, resistivity to charge transfer (RCT) decreased with temperature, reaching its lowest level at 250 °C. Flat band potential and donor density were found to fluctuate with temperature, from 0.39 to 0.76 V and 4.41 × 1018 to 15.86 × 1018 cm−3, respectively, according to Mott–Schottky measurements. Our results indicate that CdS thin films are promising candidates for optoelectronic applications. [ABSTRACT FROM AUTHOR]

A new benzotrithiophene-based small molecule, namely 2,5,8-Tris[5-(2,2-dicyanovinyl)-2-thienyl]-benzo[1,2-b:3,4-b′:6,5-b″]-trithiophene (DCVT-BTT), was successfully synthesized and subsequently characterized. This compound was found to present an intense absorption band at a wavelength position of ∼544 nm and displayed potentially relevant optoelectronic properties for photovoltaic devices. Theoretical studies demonstrated an interesting behavior of charge transport as electron donor (hole-transporting) active material for heterojunction cells. A preliminary study of small-molecule organic solar cells based on DCVT-BTT (as the P-type organic semiconductor) and phenyl-C61-butyric acid methyl ester (as the N-type organic semiconductor) exhibited a power conversion efficiency of 2.04% at a donor: acceptor weight ratio of 1:1. [ABSTRACT FROM AUTHOR]

This paper describes the synthesis and characterization of new organic semiconductors based on pyrrolo[1,2-i][1,7]phenanthrolines in the form of thin layers. The thin layers, produced via the spin coating method (with a thickness of 10–11 μm), were investigated for their electrical and optical properties. After heat treatment at temperatures ranging from 210 to 240 °C, the layers displayed consistent and reproducible properties. The layers exhibited n-type semiconductor behavior, with a thermal activation energy (Ea) in the range of 0.75–0.78 eV. Additionally, the layers showed transmittance values of 84–92% in the visible and near-infrared spectral ranges, with a direct optical band gap (Egod) ranging from 3.13 to 4.11 eV. These thin layers have potential applications in electronic devices such as thermistors, as well as in nanoelectronics and optoelectronics. Overall, these new organic semiconductors show promising properties for practical implementation in various electronic applications. [ABSTRACT FROM AUTHOR]

The precise control and monitoring of pH values remain critical for many chemical, physiological and biological processes. Perylene diimide (PDI)-based molecules and materials exhibit excellent thermal, chemical and photochemical stability, unique UV-vis absorption and fluorescent emission properties, low cytotoxicity, as well as intrinsic electron-withdrawing (n-type semiconductor) nature and impressive molecular assembly capability. These features combined enable promising applications of PDIs in chemosensors via optical signal modulations (e.g., fluorescent or colorimetric). One of the typical applications lies in the probing of pH under various conditions, which in turn helps monitor the extracellular (environmental) and intracellular pH change and pH-relying molecular recognition of inorganic or organic ions, as well as biological species, and so on. In this review, we give a special overview of the recent progress in PDI-based optical chemosensors for pH probing in various aqueous and binary water–organic media. Specific emphasis will be given to the key design roles of sensing materials regarding the architectures and the corresponding sensing mechanisms for a sensitive and selective pH response. The molecular design of PDIs and structural optimization of their assemblies in order to be suitable for sensing various pH ranges as applied in diverse scenarios will be discussed in detail. Moreover, the future perspective will be discussed, focusing on the current key challenges of PDI-based chemosensors in pH monitoring and the potential approach of new research, which may help address the challenges. [ABSTRACT FROM AUTHOR]

Industrial effluents containing dyes are the dominant pollutants, making the drinking water unfit. Among the dyes, methylene orange (MO) dye is mutagenic, carcinogenic and toxic to aquatic organisms. Therefore, its removal from water bodies through effective and economical approach is gaining increased attention in the last decades. Photocatalytic degradation has the ability to convert economically complex dye molecules into non-toxic and smaller species via redox reactions, by using photocatalysts. g-C3N4 is a metal-free n-type semiconductor, typical nonmetallic and non-toxici polymeric photocatalyst. It widely used in photocatalytic materials, due to its easy and simple synthesis, fascinating electronic band structure, high stability and abundant availability. As a photocatalyst, its major drawbacks are its limited efficiency in separating photo-excited electron–hole pairs, high separated charge recombination, low specific surface area, and low absorption coefficient. In this review, we report the recent modification strategies adopted for g-C3N4 for the efficient photodegradation of MO dye. The different modification approaches, such as nanocomposites and heterojunctions, as well as doping and defect introductions, are briefly discussed. The mechanism of the photodegradation of MO dye by g-C3N4 and future perspectives are discussed. This review paper will predict strategies for the fabrication of an efficient g-C3N4-based photocatalyst for the photodegradation of MO dye. [ABSTRACT FROM AUTHOR]

Indium oxide (In2O3) is a widely used n-type semiconductor for detection of pollutant gases; however, its gas selectivity and sensitivity have been suboptimal in previous studies. In this work, zinc-doped indium oxide nanowires with appropriate morphologies and high crystallinity were synthesized using chemical vapor deposition (CVD). An accurate method for electrical measurement was attained using a single nanowire microdevice, showing that electrical resistivity increased after doping with zinc. This is attributed to the lower valence of the dopant, which acts as an acceptor, leading to the decrease in electrical conductivity. X-ray photoelectron spectroscopy (XPS) analysis confirms the increased oxygen vacancies due to doping a suitable number of atoms, which altered oxygen adsorption on the nanowires and contributed to improved gas sensing performance. The sensing performance was evaluated using reducing gases, including carbon monoxide, acetone, and ethanol. Overall, the response of the doped nanowires was found to be higher than that of undoped nanowires at a low concentration (5 ppm) and low operating temperatures. At 300 °C, the gas sensing response of zinc-doped In2O3 nanowires was 13 times higher than that of undoped In2O3 nanowires. The study concludes that higher zinc doping concentration in In2O3 nanowires improves gas sensing properties by increasing oxygen vacancies after doping and enhancing gas molecule adsorption. With better response to reducing gases, zinc-doped In2O3 nanowires will be applicable in environmental detection and life science. [ABSTRACT FROM AUTHOR]

The electrical conductivity (σ) and Seebeck coefficient (S) at temperatures from 40 °C to 100 °C of melt-processed polypropylene (PP) composites filled with 5 wt.% of industrial-grade carbon nanofibers (CNFs) is investigated. Transmission Electron Microscopy (TEM) of the two Pyrograf® III CNFs (PR 19 LHT XT and PR 24 LHT XT), used in the fabrication of the PP/CNF composites (PP/CNF 19 and PP/CNF 24), reveals that CNFs PR 24 LHT XT show smaller diameters than CNFs PR 19 LHT XT. In addition, this grade (PR 24 LHT XT) presents higher levels of graphitization as deduced by Raman spectroscopy. Despite these structural differences, both Pyrograf® III grades present similar σ (T) and S (T) dependencies, whereby the S shows negative values (n-type character). However, the σ (T) and S (T) of their derivative PP/CNF19 and PP/CNF24 composites are not analogous. In particular, the PP/CNF24 composite shows higher σ at the same content of CNFs. Thus, with an additionally slightly more negative S value, the PP/CNF24 composites present a higher power factor (PF) and figure of merit (zT) than PP/CNF19 composites at 40 °C. Moreover, while the σ (T) and S (T) of CNFs PR 19 LHT XT clearly drive the σ (T) and S (T) of its corresponding PP/CNF19 composite, the S (T) of CNFs PR 24 LHT XT does not drive the S (T) observed in their corresponding PP/CNF24 composite. Thus, it is inferred in PP/CNF24 composites an unexpected electron donation (n-type doping) from the PP to the CNFs PR 24 LHT XT, which could be activated when PP/CNF24 composites are subjected to that increase in temperature from 40 °C to 100 °C. All these findings are supported by theoretical modeling of σ (T) and S (T) with the ultimate aim of understanding the role of this particular type of commercial CNFs on the thermoelectrical properties of their PP/CNF composites. [ABSTRACT FROM AUTHOR]

The S-scheme photocatalyst system has become increasingly popular in recent years for its ability to efficiently degrade various pollutants, including organic dyes, pesticides, and other harmful substances. This system uses two semiconductor photocatalysts with different bandgap energies, working together in a redox reaction to produce a highly reactive species capable of pollutant breakdown. Here, an S-scheme Ag2WO4/Ag6Si2O7 p-n heterojunction nanocomposite was successfully developed by a coprecipitation method. By decomposing Rhodamine B (RhB) under visible-light irradiation, the photocatalytic activities of Ag6Si2O7/Ag2WO4 showed enhanced photocatalytic degradation performance of organic dyes, especially at a 4% molar ratio of the Ag2WO4-modified Ag6Si2O7 sample, whose degradation rate was 23.7 and 4.65 times those of Ag2WO4 and Ag6Si2O7, respectively. The physical and chemical properties of the samples were determined by identifying the physical structure, chemical element composition, and optical responsiveness. The optimum composite amongst the prepared materials was AgSW-4, achieving the maximum RhB degradation efficiency of 97.5%, which was higher by 60% and 20% than its counterparts Ag6Si2O7 and Ag2WO4, respectively. These results showed that in the nanocomposite structure, Ag6Si2O7 was a p-type semiconductor and Ag2WO4 was an n-type semiconductor. Based on the analysis data, a comprehensive p-n heterojunction S-scheme process was proposed to demonstrate the enhanced photocatalytic performance of the Ag6Si2O7/Ag2WO4 nanocomposite. [ABSTRACT FROM AUTHOR]

Graphene is an excellent 2D material for vertical organic transistors electrodes due to its weak electrostatic screening and field-tunable work function, in addition to its high conductivity, flexibility and optical transparency. Nevertheless, the interaction between graphene and other carbon-based materials, including small organic molecules, can affect the graphene electrical properties and therefore, the device performances. This work investigates the effects of thermally evaporated C60 (n-type) and Pentacene (p-type) thin films on the in-plane charge transport properties of large area CVD graphene under vacuum. This study was performed on a population of 300 graphene field effect transistors. The output characteristic of the transistors revealed that a C60 thin film adsorbate increased the graphene hole density by (1.65 ± 0.36) × 1012 cm−2, whereas a Pentacene thin film increased the graphene electron density by (0.55 ± 0.54) × 1012 cm−2. Hence, C60 induced a graphene Fermi energy downshift of about 100 meV, while Pentacene induced a Fermi energy upshift of about 120 meV. In both cases, the increase in charge carriers was accompanied by a reduced charge mobility, which resulted in a larger graphene sheet resistance of about 3 kΩ at the Dirac point. Interestingly, the contact resistance, which varied in the range 200 Ω–1 kΩ, was not significantly affected by the deposition of the organic molecules. [ABSTRACT FROM AUTHOR]

Graphitic carbon nitride (gCN) is a promising n-type semiconductor widely investigated for photo-assisted water splitting, but less studied for the (photo)electrochemical degradation of aqueous organic pollutants. In these fields, attractive perspectives for advancements are offered by a proper engineering of the material properties, e.g., by depositing gCN onto conductive and porous scaffolds, tailoring its nanoscale morphology, and functionalizing it with suitable cocatalysts. The present study reports on a simple and easily controllable synthesis of gCN flakes on Ni foam substrates by electrophoretic deposition (EPD), and on their eventual decoration with Co-based cocatalysts [CoO, CoFe2O4, cobalt phosphate (CoPi)] via radio frequency (RF)-sputtering or electrodeposition. After examining the influence of processing conditions on the material characteristics, the developed systems are comparatively investigated as (photo)anodes for water splitting and photoelectrocatalysts for the degradation of a recalcitrant water pollutant [potassium hydrogen phthalate (KHP)]. The obtained results highlight that while gCN decoration with Co-based cocatalysts boosts water splitting performances, bare gCN as such is more efficient in KHP abatement, due to the occurrence of a different reaction mechanism. The related insights, provided by a multi-technique characterization, may provide valuable guidelines for the implementation of active nanomaterials in environmental remediation and sustainable solar-to-chemical energy conversion. [ABSTRACT FROM AUTHOR]

Nanoscale heterostructured zinc oxide/reduced graphene oxide (ZnO/rGO) materials with p–n heterojunctions exhibit excellent low temperature NO2 gas sensing performance, but their doping ratio modulated sensing properties remain poorly understood. Herein, ZnO nanoparticles were loaded with 0.1~4% rGO by a facile hydrothermal method and evaluated as NO2 gas chemiresistor. We have the following key findings. First, ZnO/rGO manifests doping ratio-dependent sensing type switching. Increasing the rGO concentration changes the type of ZnO/rGO conductivity from n-type (<0.6% rGO) to mixed n/p -type (0.6~1.4% rGO) and finally to p-type (>1.4% rGO). Second, interestingly, different sensing regions exhibit different sensing characteristics. In the n-type NO2 gas sensing region, all the sensors exhibit the maximum gas response at the optimum working temperature. Among them, the sensor that shows the maximum gas response exhibits a minimum optimum working temperature. In the mixed n/p-type region, the material displays abnormal reversal from n- to p-type sensing transitions as a function of the doping ratio, NO2 concentration and working temperature. In the p-type gas sensing region, the response decreases with increasing rGO ratio and working temperature. Third, we derive a conduction path model that shows how the sensing type switches in ZnO/rGO. We also find that p–n heterojunction ratio (np–n/nrGO) plays a key role in the optimal response condition. The model is supported by UV-vis experimental data. The approach presented in this work can be extended to other p–n heterostructures and the insights will benefit the design of more efficient chemiresistive gas sensors. [ABSTRACT FROM AUTHOR]

Photocatalysis technology is a potential solution to solve the problem of environmental pollution and energy shortage, but its wide application is limited by the low efficiency of solar energy conversion. As a non-toxic and inexpensive n-type semiconductor, WO3 can absorb approximately 12% of sunlight which is considered one of the most attractive photocatalytic candidates. However, the narrow light absorption range and the high recombination rate of photogenerated electrons and holes restrict the further development of WO3-based catalysts. Herein, the studies on preparation and modification methods such as doping element, regulating defects and constructing heterojunctions to enlarge the range of excitation light to the visible region and slow down the recombination of carriers on WO3-based catalysts so as to improve their photocatalytic performance are reviewed. The mechanism and application of WO3-based catalysts in the dissociation of water, the degradation of organic pollutants, as well as the hydrogen reduction of N2 and CO2 are emphatically investigated and discussed. It is clear that WO3-based catalysts will play a positive role in the field of future photocatalysis. This paper could also provide guidance for the rational design of other metallic oxide (MOx) catalysts for the increasing conversion efficiency of solar energy. [ABSTRACT FROM AUTHOR]