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Infrared detectors have broad application prospects in the fields of detection and communication. Using ideal materials and good device structure is crucial for achieving high-performance infrared detectors. Here, we utilized black phosphorus (BP) and single-walled carbon nanotube (SWCNT) films to construct a vertical van der Waals heterostructure, resulting in high-performance photovoltaic infrared detectors. In the device, a strong built-in electric field was formed in the heterojunction with a favored energy-band matching between the BP and the SWCNT, which caused a good photovoltaic effect. The fabricated devices exhibited a diode-like rectification behavior in the dark, which had a high rectification ratio up to a magnitude of 104 and a low ideal factor of 1.4. Under 1550 nm wavelength illumination, the 2D BP/SWCNT film photodetector demonstrated an open-circuit voltage of 0.34 V, a large external power conversion efficiency (η) of 7.5% and a high specific detectivity (D*) of 3.1 × 109 Jones. This external η was the highest among those for the photovoltaic devices fabricated with the SWCNTs or the heterostructures based on 2D materials and the obtained D* was also higher than those for most of the infrared detectors based on 2D materials or carbon materials. This work showcases the application potential of BP and SWCNTs in the detection field. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) black phosphorus (BP) is considered an ideal building block for field-effect transistors (FETs) owing to its unique structure and intriguing properties. To achieve high-performance BP-FETs, it is essential to establish a reliable and low-resistance contact between the BP and the electrodes. In this study, we employed a localized Joule heating method to improve the contact between the 2D BP and gold electrodes, resulting in enhanced BP-FET performance. Upon applying a sufficiently large source–drain voltage, the zero-bias conductance of the device increased by approximately five orders of magnitude, and the linearity of the current–voltage curves was also enhanced. This contact improvement can be attributed to the formation of gold phosphide at the interface of the BP and the gold electrodes owing to current-generated localized Joule heat. The fabricated BP-FET demonstrated a high on/off ratio of 4850 and an on-state conductance per unit channel width of 1.25 μS μm−1, significantly surpassing those of the BP-FETs without electrical annealing. These findings offer a method to achieve a low-resistance BP/metal contact for developing high-performance BP-based electronic devices. [ABSTRACT FROM AUTHOR]

Three vanadium-based catalysts were used to remove high concentrations of nitrogen oxides, and the catalysts' performance of de-NOx and anti-H2O under the high concentrations of NOx were investigated. The V-Mo-W/TiO2 catalysts were tested under 1500 mL/min gas flow (GHSV = 500 h−1, 2.4% NO2, 4.78% NH3, 13% O2, 4% H2O, 5% CO2) and characterized by BET, SEM, EDS, XRD, XPS, H2-TPR, and NH3-TPD; then, their physical and chemical properties were analyzed. The results showed that under the influence of H2O, the NOx conversion of the V-Mo-W/TiO2 catalysts remained above 97% at 200–280 °C indicating that the catalysts had high catalytic activity and strong water resistance. The analysis of the characterization results showed that the larger specific surface area of the catalyst, the higher acid content, stronger redox ability, and higher V4+ and V3+ content were the reasons for the high NOx conversion. The surface area decreased and the microstructure become smoother after the reaction, which may be caused by thermal sintering, but the overall morphology did not change. Comparing the H2-TPR and NH3-TPD of V1.6Mo1.7W1.8/TiO2 before and after NH3-SCR reaction, it was found that the reduction peak and the intensity of the acid sites of the sample had not changed, which indicated that the catalyst had good anti-sintering performance and a long lifetime. This is significant for followup long-term engineering application experiments. [ABSTRACT FROM AUTHOR]

High-performance tracking trace amounts of NO2 with gas sensors could be helpful in protecting human health since high levels of NO2 may increase the risk of developing acute exacerbation of chronic obstructive pulmonary disease. Among various gas sensors, Graphene-based sensors have attracted broad attention due to their sensitivity, particularly with the addition of noble metals (e.g., Ag). Nevertheless, the internal mechanism of improving the gas sensing behavior through doping Ag is still unclear. Herein, the impact of Ag doping on the sensing properties of Graphene-based sensors is systematically analyzed via first principles. Based on the density-functional theory (DFT), the adsorption behavior of specific gases (NO2, NH3, H2O, CO2, CH4, and C2H6) on Ag-doped Graphene (Ag–Gr) is calculated and compared. It is found that NO2 shows the strongest interaction and largest Mulliken charge transfer to Ag–Gr among these studied gases, which may directly result in the highest sensitivity toward NO2 for the Ag–Gr-based gas sensor. [ABSTRACT FROM AUTHOR]