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The construction of anatase/rutile heterojunctions in TiO2 is an effective way of improving the CO2 photoreduction activity. Yet, the origin of the superior photocatalytic performance is still unclear. To solve this issue, the band edges between anatase and rutile phases were theoretically determined based on the three-phase atomic model of (112)A/II/(101)R, and simultaneously the CO2 reduction processes were meticulously investigated. Our calculations show that photogenerated holes can move readily from anatase to rutile via the thin intermediated II phase, while photoelectrons flowing in the opposite direction may be impeded due to the electron trapping sites at the II phase. However, the large potential drop across the anatase/rutile interface and the strong built-in electric field can provide an effective driving force for photoelectrons' migration to anatase. In addition, the II phase can better enhance the solar light utilization of (112)A/(100)II, including a wide light response range and an intensive optical absorption coefficient. Meanwhile, the mixed-phase TiO2 possesses negligible hydrogenation energy (CO2 to COOH*) and lower rate-limiting energy (HCOOH* to HCO*), which greatly facilitate CH3OH generation. The efficient charge separation, strengthened light absorption, and facile CO2 reduction successfully demonstrate that the anatase/rutile mixed-phase TiO2 is an efficient photocatalyst utilized for CO2 conversion. [ABSTRACT FROM AUTHOR]

The impact of radiation on MoS2-based devices is an important factor in the utilization of two-dimensional semiconductor-based technology in radiation-sensitive environments. In this study, the effects of gamma irradiation on the electrical variations in MoS2 field-effect transistors with buried local back-gate structures were investigated, and their related effects on Al2O3 gate dielectrics and MoS2/Al2O3 interfaces were also analyzed. The transfer and output characteristics were analyzed before and after irradiation. The current levels decreased by 15.7% under an exposure of 3 kGy. Additionally, positive shifts in the threshold voltages of 0.50, 0.99, and 1.15 V were observed under irradiations of 1, 2, and 3 kGy, respectively, compared to the non-irradiated devices. This behavior is attributable to the comprehensive effects of hole accumulation in the Al2O3 dielectric interface near the MoS2 side and the formation of electron trapping sites at the interface, which increased the electron tunneling at the MoS2 channel/dielectric interface. [ABSTRACT FROM AUTHOR]

This study demonstrates a significant enhancement in the performance of thin-film transistors (TFTs) in terms of stability and mobility by combining indium–tungsten oxide (IWO) and zinc oxide (ZnO). IWO/ZnO heterojunction structures were fabricated with different channel thickness ratios and annealing environments. The IWO (5 nm)/ZnO (45 nm) TFT, annealed in O2 ambient, exhibited a high mobility of 26.28 cm2/V·s and a maximum drain current of 1.54 μA at a drain voltage of 10 V, outperforming the single-channel ZnO TFT, with values of 3.8 cm2/V·s and 28.08 nA. This mobility enhancement is attributed to the formation of potential wells at the IWO/ZnO junction, resulting in charge accumulation and improved percolation conduction. The engineered heterojunction channel demonstrated superior stability under positive and negative gate bias stresses compared to the single ZnO channel. The analysis of O 1s spectra showed OI, OII, and OIII peaks, confirming the theoretical mechanism. A bias temperature stress test revealed superior charge-trapping time characteristics at temperatures of 25, 55, and 85 °C compared with the single ZnO channel. The proposed IWO/ZnO heterojunction channel overcomes the limitations of the single ZnO channel and presents an attractive approach for developing TFT-based devices having excellent stability and enhanced mobility. [ABSTRACT FROM AUTHOR]

The hydroxylated carbon nanotubes (CNTs-OH), due to their propensity to trap electrons, are considered in many applications. Despite many case studies, the effect of the electronic structure of the CNT-OH electrode on its oxidation properties has not received in-depth analysis. In the present study, we used Fe(CN)63−/4− and Ru(NH3)63+/2+ as redox probes, which differ in charge. The CNT-OH and CNT electrodes used in the cyclic voltammetry were in the form of freestanding films. The concentration of holes in the CNTs-OH, estimated from the upshift of the Raman G-feature, was 2.9 × 10 13   c m − 2 . The standard rate constant of the heterogeneous electron transfer (HET) between Fe(CN)63−/4− and the CNTs-OH electrode was 25.9 × 10 − 4   c m · s − 1 . The value was more than four times higher than the HET rate on the CNT electrode ( k s = 6.3 × 10 − 4   c m · s − 1 ), which proves excellent boosting of the redox reaction by the holes. The opposite effect was observed for the Ru(NH3)63+/2+ redox couple. While the redox reaction rate constant at the CNT electrode was 1.4 × 10 − 4   c m · s − 1 , there was a significant suppression of the redox reaction at the CNT-OH electrode ( k s < 0.1 × 10 − 4   c m · s − 1 ). Based on the DFT calculations and the Gerischer model, we find that the boosting of the HET from the reduced form of the redox couple to CNT-OH occurs when the reduced forms of the redox couples are negatively charged and the occupied reduced states are aligned with acceptor states of the nanotube electrode. [ABSTRACT FROM AUTHOR]

In this study, a novel perovskite solar cell (PSC) architecture is presented that utilizes an HTL-free configuration with formamide tin iodide (FASnI3) as the active layer and fullerene (C60) as the electron transport layer (ETL), which represents a pioneering approach within the field. The elimination of hole transport layers (HTLs) reduces complexity and cost in PSC heterojunction structures, resulting in a simplified and more cost-effective PSC structure. In this context, an HTL-free tin HC(NH2)2SnI3-based PSC was simulated using the solar cell capacitance simulator (SCAPS) within a one-dimensional framework. Through this approach, the device performance of this novel HTL-free FASnI3-based PSC structure was engineered and evaluated. Key performance parameters, including the open-circuit voltage (Voc), short-circuit current density (Jsc), fill factor (FF), power conversion efficiency (PCE), I-V characteristics, and quantum efficiency (QE), were systematically assessed through the modulation of physical parameters across various layers of the device. A preliminary analysis indicated that the HTL-free configuration exhibited improved I-V characteristics, with a PCE increase of 1.93% over the HTL configuration due to improved electron and hole extraction characteristics, reduced current leakage at the back contact, and reduced trap-induced interfacial recombination. An additional boost to the device's key performance parameters has been achieved through the further optimization of several physical parameters, such as active layer thickness, bulk and interface defects, ETL thickness, carrier concentration, and back-contact materials. For instance, increasing the thickness of the active layer PSC up to 1500 nm revealed enhanced PV performance parameters; however, further increases in thickness have resulted in performance saturation due to an increased rate of hole–electron recombination. Moreover, a comprehensive correlation study has been conducted to determine the optimum thickness and donor doping level for the C60-ETL layer in the range of 10–200 nm and 1012–1019 cm−3, respectively. Optimum device performance was observed at an ETL-C60 ultra-thin thickness of 10 nm and a carrier concentration of 1019 cm−3. To maintain improved PCEs, bulk and interface defects must be less than 1016 cm−3 and 1015 cm−3, respectively. Additional device performance improvement was achieved with a back-contact work function of 5 eV. The optimized HTL-free FASnI3 structure demonstrated exceptional photovoltaic performance with a PCE of 19.63%, Voc of 0.87 V, Jsc of 27.86 mA/cm2, and FF of 81%. These findings highlight the potential for highly efficient photovoltaic (PV) technology solutions based on lead-free perovskite solar cell (PSC) structures that contribute to environmental remediation and cost-effectiveness. [ABSTRACT FROM AUTHOR]

Deep defects in the long-wave infrared (LWIR) HgCdTe heterostructure photodiode were measured via deep-level transient spectroscopy (DLTS) and photoluminescence (PL). The n+-P+-π-N+ photodiode structure was grown by following the metal–organic chemical vapor deposition (MOCVD) technique on a GaAs substrate. DLTS has revealed two defects: one electron trap with an activation energy value of 252 meV below the conduction band edge, located in the low n-type-doped transient layer at the π-N+ interface, and a second hole trap with an activation energy value of 89 meV above the valence band edge, located in the π absorber. The latter was interpreted as an isolated point defect, most probably associated with mercury vacancies (VHg). Numerical calculations applied to the experimental data showed that this VHg hole trap is the main cause of increased dark currents in the LWIR photodiode. The determined specific parameters of this trap were the capture cross-section for the holes of σp = 10−16–4 × 10−15 cm2 and the trap concentration of NT = 3–4 × 1014 cm−3. PL measurements confirmed that the trap lies approximately 83–89 meV above the valence band edge and its location. [ABSTRACT FROM AUTHOR]

For the first time, the Z1 and Z2 defects with closely spaced energy levels having negative-U properties are revealed in high-purity semi-insulating (HPSI) 4H-SiC using Laplace-transform photoinduced transient spectroscopy (LPITS). In this material, after switching off the optical trap-filling pulse, either the one-electron or the two-electron thermally stimulated emission from these defects is observed at temperatures 300–400 K. It is found that the former corresponds to the Z10/+ and Z20/+ transitions with the activation energies of 514 and 432 meV, respectively, and the latter is associated with the Z1−/+ and Z2−/+ transitions with the activation energies of 592 meV and 650 meV, respectively. The Z1 and Z2 defect concentrations are found to increase from 2.1 × 1013 to 2.2 × 1014 cm−3 and from 1.2 × 1013 to 2.7 × 1014 cm−3, respectively, after the heat treatment of HPSI 4H-SiC samples at 1400 °C for 3 h in Ar ambience. Using the electrical trap-filling pulse, only the thermal two-electron emission from each defect was observed in the epitaxial 4H-SiC through Laplace-transform deep level transient spectroscopy (LDLTS). The activation energies for this process from the Z1 and Z2 defects are 587 and 645 meV, respectively, and the defect concentrations are found to be 6.03 × 1011 and 2.64 × 1012 cm−3, respectively. It is postulated that the Z1 and Z2 defects are the nearest-neighbor divacancies involving the carbon and silicon vacancies located at mixed, hexagonal (h), and quasi-cubic (k) lattice sites. [ABSTRACT FROM AUTHOR]

We analyze the general relation between canonical and grand canonical ensembles in the thermodynamic limit. We begin our discussion by deriving, with an alternative approach, some standard results first obtained by Kac and coworkers in the late 1970s. Then, motivated by the Bose–Einstein condensation (BEC) of trapped gases with a fixed number of atoms, which is well described by the canonical ensemble and by the recent groundbreaking experimental realization of BEC with photons in a dye-filled optical microcavity under genuine grand canonical conditions, we apply our formalism to a system of non-interacting Bose particles confined in a two-dimensional harmonic trap. We discuss in detail the mathematical origin of the inequivalence of ensembles observed in the condensed phase, giving place to the so-called grand canonical catastrophe of density fluctuations. We also provide explicit analytical expressions for the internal energy and specific heat and compare them with available experimental data. For these quantities, we show the equivalence of ensembles in the thermodynamic limit. [ABSTRACT FROM AUTHOR]

This study aimed to investigate the impact of cold stress and priming on photosynthesis in the early development of maize and soybean, crops with diverse photosynthetic pathways. The main objectives were to determine the effect of cold stress on chlorophyll a fluorescence parameters and spectral reflectance indices, to determine the effect of cold stress priming and possible stress memory and to determine the relationship between different parameters used in determining the stress response. Fourteen maize inbred lines and twelve soybean cultivars were subjected to control, cold stress, and priming followed by cold stress in a walk-in growth chamber. Measurements were conducted using a portable fluorometer and a handheld reflectance instrument. Cold stress induced an overall downregulation of PSII-related specific energy fluxes and efficiencies, the inactivation of RCs resulting in higher energy dissipation, and electron transport chain impairment in both crops. Spectral reflectance indices suggested cold stress resulted in pigment differences between crops. The effect of priming was more pronounced in maize than in soybean with mostly a cumulatively negative effect. However, priming stabilized the electron trapping efficiency and upregulated the electron transfer system in maize, indicating an adaptive response. Overall, this comprehensive analysis provides insights into the complex physiological responses of maize and soybean to cold stress, emphasizing the need for further genotype-specific cold stress response and priming effect research. [ABSTRACT FROM AUTHOR]

Defect annihilation of the IGZO/SiO2 layer is of great importance to enhancing the bias stress stabilities of bottom-gate coplanar thin-film transistors (TFTs). The effects of annealing temperatures (Ta) on the structure of the IGZO/SiO2 layer and the stabilities of coplanar IGZO TFTs were investigated in this work. An atomic depth profile showed that the IGZO/SiO2 layer included an IGZO layer, an IGZO/SiO2 interfacial mixing layer, and a SiO2 layer. Higher Ta had only one effect on the IGZO layer and SiO2 layer (i.e., strengthening chemical bonds), while it had complex effects on the interfacial mixing layer—including weakening M-O bonds (M: metallic elements in IGZO), strengthening damaged Si-O bonds, and increasing O-related defects (e.g., H2O). At higher Ta, IGZO TFTs exhibited enhanced positive bias temperature stress (PBTS) stabilities but decreased negative bias temperature stress (NBTS) stabilities. The enhanced PBTS stabilities were correlated with decreased electron traps due to the stronger Si-O bonds near the interfacial layer. The decreased NBTS stabilities were related to increased electron de-trapping from donor-like defects (e.g., weak M-O bonds and H2O) in the interfacial layer. Our results suggest that although higher Ta annihilated the structural damage at the interface from ion bombardment, it introduced undesirable defects. Therefore, to comprehensively improve electrical stabilities, controlling defect generation (e.g., by using a mild sputtering condition of source/drain electrodes and oxides) was more important than enhancing defect annihilation (e.g., through increasing Ta). [ABSTRACT FROM AUTHOR]

The effect of high- and low-temperature conditions on the performance of IGZO TFT and logic circuits were investigated in this work. In the temperature range of 250−350 K, the performance of the IGZO TFT did not show significant changes and exhibited a certain degree of high- and low-temperature resistance. When the temperature was below 250 K, as the temperature decreased, the threshold voltage (VTH) of the IGZO TFT significantly increased, the field effect mobility (μFE) and the on state current (ION) significantly decreased. This is attributed to the lower excitation degree of charge carriers at extremely low temperatures, resulting in fewer charge carriers transitioning to the conduction or valence bands, and the formation of defects also limits carrier migration. When the temperature exceeded 350 K, as the temperature increased, more electrons could escape from the bandgap trap state and become free charge carriers, and the IGZO layer was thermally excited to produce more oxygen vacancies, resulting in higher μFE and lower VTH. In addition, the drain current noise spectral density of IGZO TFT conformed to the 1/ƒ noise characteristic, and the degradation mechanism of IGZO TFT over a wide temperature range was confirmed based on the changes in noise spectral density at different temperatures. In addition, an inverter logic unit circuit was designed based on IGZO TFT, and the performance changes over a wide temperature range were analyzed. This lays the foundation for IGZO TFT to be applied in integrated circuits with harsh environments. [ABSTRACT FROM AUTHOR]

The failure mechanism of thermal gate oxide in silicon carbide (SiC) power metal oxide semiconductor field effect transistors (MOSFETs), whether it is field-driven breakdown or charge-driven breakdown, has always been a controversial topic. Previous studies have demonstrated that the failure time of thermally grown silicon dioxide (SiO2) on SiC stressed with a constant voltage is indicated as charge driven rather than field driven through the observation of Weibull Slope β. Considering the importance of the accurate failure mechanism for the thermal gate oxide lifetime prediction model of time-dependent dielectric breakdown (TDDB), charge-driven breakdown needs to be further fundamentally justified. In this work, the charge-to-breakdown ( Q B D ) of the thermal gate oxide in a type of commercial planar SiC power MOSFETs, under the constant current stress (CCS), constant voltage stress (CVS), and pulsed voltage stress (PVS) are extracted, respectively. A mathematical electron trapping model in thermal SiO2 grown on single crystal silicon (Si) under CCS, which was proposed by M. Liang et al., is proven to work equally well with thermal SiO2 grown on SiC and used to deduce the Q B D model of the device under test (DUT). Compared with the Q B D obtained under the three stress conditions, the charge-driven breakdown mechanism is validated in the thermal gate oxide of SiC power MOSFETs. [ABSTRACT FROM AUTHOR]

Positronium (Ps) is a valuable probe to investigate nanometric or sub-nanometric cavities in non-metallic materials, where Ps can be confined. Accessible experimental measurements concern the lifetime of trapped Ps, which is largely influenced by pick-off processes, depending on the size of the cavity as well as on the density of the electrons belonging to the surface of the host trap. Another relevant physical quantity is the contact density, that is the electron density at the positron position, which is usually found to be well below the vacuum value. Here, we review the principal models that have been formulated to account and explain for these physical properties of confined Ps. Starting with models, treating Ps as a single particle formulated essentially to study pick-off, we go on to describe more refined two-particle models because a two-body model is the simplest approach able to describe any change in the contact density, observed in many materials. Finally, we consider a theory of Ps annihilation in nanometric voids in which the exchange correlations between the electron of Ps and the outer electrons play a fundamental role. This theory is not usually taken into account in the literature, but it has to be considered for a correct theory of pick-off annihilation processes. [ABSTRACT FROM AUTHOR]

We performed dry oxidation on n-type silicon carbide (SiC), followed by annealing in diluted N2O, and subsequently fabricated n-type MOS structures. The study aimed to investigate the impact of different annealing times on the trap charges near the SiC/SiO2 interface and the reliability of the gate dielectric. Capacitance-voltage (C-V) and current-voltage (I-V) measurements of the n-type MOS revealed that increasing the annealing time with N2O effectively reduces the density of electron traps near the SiC/SiO2 interface, mitigates the drift in flat-band voltage and enhances the oxide breakdown field strength. However, excessive annealing time leads to an increase in the flat-band voltage drift of the MOS, resulting in premature oxide breakdown. Using the optimized annealing conditions, we fabricated n-type LDMOSFETs and obtained the threshold voltage (Vth), field-effect mobility (μFE) and specific on-resistance (Ron-sp) from the transfer curve (Id-Vg) and output curve (Id-Vd) measurements. The research findings provide valuable insights for the gate oxidation process of SiC. [ABSTRACT FROM AUTHOR]

The presence of surface trap states (STSs) is one of the key factors to affect the electronic and optical properties of quantum dots (QDs), however, the exact mechanism of how STSs influence QDs remains unclear. Herein, we demonstrated the impact of STSs on electron transfer in CdSe QDs and triplet-triplet energy transfer (TTET) from CdSe to surface acceptor using femtosecond transient absorption spectroscopy. Three types of colloidal CdSe QDs, each containing various degrees of STSs as evidenced by photoluminescence and X-ray photoelectron spectroscopy, were employed. Time-resolved emission and transient absorption spectra revealed that STSs can suppress band-edge emission effectively, resulting in a remarkable decrease in the lifetime of photoelectrons in QDs from 17.1 ns to 4.9 ns. Moreover, the investigation of TTET process revealed that STSs can suppress the generation of triplet exciton and effectively inhibit band-edge emission, leading to a significant decrease in TTET from CdSe QDs to the surface acceptor. This work presented evidence for STSs influence in shaping the optoelectronic properties of QDs, making it a valuable point of reference for understanding and manipulating STSs in diverse QDs-based optoelectronic applications involving electron and energy transfer. [ABSTRACT FROM AUTHOR]

The effects of proton irradiation on CMOS Single-Photon Avalanche Diodes (SPADs) are investigated in this article. The I–V characteristics, dark count rate (DCR), and photon detection probability (PDP) of the CMOS SPADs were measured under 30 MeV and 52 MeV proton irradiations. Two types of SPAD, with and without shallow trench isolation (STI), were designed. According to the experimental results, the leakage current, breakdown voltage, and PDP did not change after irradiation at a DDD of 2.82 × 108 MeV/g, but the DCR increased significantly at five different higher voltages. The DCR increased by 506 cps at an excess voltage of 2 V and 10,846 cps at 10 V after 30 MeV proton irradiation. A γ irradiation was conducted with a TID of 10 krad (Si). The DCR after the γ irradiation increased from 256 cps to 336 cps at an excess voltage of 10 V. The comparison of the DCR after proton and γ-ray irradiation with two structures of SPAD indicates that the major increase in the DCR was due to the depletion region defects caused by proton displacement damage rather than the Si-SiO2 interface trap generated by ionization. [ABSTRACT FROM AUTHOR]

In this paper, the degradation behaviors of the ferroelectric gate Gallium nitride (GaN) high electron mobility transistor (HEMT) under positive gate bias stress are discussed. Devices with a gate dielectric that consists of pure Pb(Zr,Ti)O3 (PZT) and a composite PZT/Al2O3 bilayer are studied. Two different mechanisms, charge trapping and generation of traps, both contribute to the degradation. We have observed positive threshold voltage shift in both kinds of devices under positive gate bias stress. In the devices with a PZT gate oxide, we have found the degradation is owing to electron trapping in pre-existing oxide traps. However, the degradation is caused by electron trapping in pre-existing oxide traps and the generation of traps for the devices with a composite PZT/Al2O3 gate oxide. Owing to the large difference in dielectric constants between PZT and Al2O3, the strong electric field in the Al2O3 interlayer makes PZT/Al2O3 GaN HEMT easier to degrade. In addition, the ferroelectricity in PZT enhances the electric field in Al2O3 interlayer and leads to more severe degradation. According to this study, it is worth noting that the reliability problem of the ferroelectric gate GaN HEMT may be more severe than the conventional metal–insulator–semiconductor HEMT (MIS-HEMT). [ABSTRACT FROM AUTHOR]

This study focuses on InGaZnO-based synaptic devices fabricated using reactive radiofrequency sputtering deposition with highly uniform and reliable multilevel memory states. Electron trapping and trap generation behaviors were examined based on current compliance adjustments and constant voltage stressing on the ITO/InGaZnO/ITO memristor. Using O2 + N2 plasma treatment resulted in stable and consistent cycle-to-cycle memory switching with an average memory window of ~95.3. Multilevel resistance states ranging from 0.68 to 140.7 kΩ were achieved by controlling the VRESET within the range of −1.4 to −1.8 V. The modulation of synaptic weight for short-term plasticity was simulated by applying voltage pulses with increasing amplitudes after the formation of a weak conductive filament. To emulate several synaptic behaviors in InGaZnO-based memristors, variations in the pulse interval were used for paired-pulse facilitation and pulse frequency-dependent spike rate-dependent plasticity. Long-term potentiation and depression are also observed after strong conductive filaments form at higher current compliance in the switching layer. Hence, the ITO/InGaZnO/ITO memristor holds promise for high-performance synaptic device applications. [ABSTRACT FROM AUTHOR]

Double perovskite La2FeCrO6 (LFCO) powders were synthesized via the hydrothermal method, which crystallized in an orthorhombic (Pnma) structure and exhibited a spherical morphology with an average particle size of 900 nm. Fourier transform infrared spectroscopy demonstrated the presence of fingerprints of vibrational modes of [FeO6] and [CrO6] octahedra in the powders. The XPS spectra revealed dual oxide states of Fe (Fe2+/Fe3+) and Cr (Cr3+/Cr4+) elements, and the oxygen element appeared as lattice oxygen and defect oxygen, respectively. The LFCO powders exhibited weak ferromagnetic behavior at 5 K with a Curie temperature of 200 K. Their saturation magnetization and coercive field were measured as 0.31 μB/f.u. and 8.0 kOe, respectively. The Griffiths phase was observed between 200 K and 223 K. A butterfly-like magnetoresistance (MR)–magnetic field (H) curve was observed in the LFCO ceramics at 5 K with an MR (5 K, 6 T) value of −4.07%. The temperature dependence of resistivity of the LFCO ceramics demonstrated their semiconducting nature. Electrical transport data were fitted by different conduction models. The dielectric behaviors of the LFCO ceramics exhibited a strong frequency dispersion, and a dielectric abnormality was observed around 260 K. That was ascribed to the jumping of electrons trapped at shallow levels created by oxygen vacancies. The dielectric loss showed relaxation behavior between 160 K and 260 K, which was attributed to the singly ionized oxygen vacancies. [ABSTRACT FROM AUTHOR]

The electronic, optical, and magnetic properties of Nd-doped ZnO systems were calculated using the DFT/GGA + U method. According to the results, the Nd dopant causes lattice parameter expansion, negative formation energy, and bandgap narrowing, resulting in the formation of an N-type degenerate semiconductor. Overlapping of the generated impurity and Fermi levels results in a significant trap effect that prevents electron-hole recombination. The absorption spectrum demonstrates a redshift in the visible region, and the intensity increased, leading to enhanced photocatalytic performance. The Nd-doped ZnO system displays ferromagnetic, with FM coupling due to strong spd-f hybridization through magnetic exchange interaction between the Nd-4f state and O-2p, Zn-4s, and Zn-3p states. These findings imply that Nd-doped ZnO may be a promising material for DMS spintronic devices. [ABSTRACT FROM AUTHOR]

Tenebrescence has been reported to have a high potential for personal ultraviolet (UV) detection. Color changes can detect UV doses and can also be used as visual sensors for X-rays. Hackmanite is known to exhibit tenebrescence. This study investigated the kinetics of electron-trapping levels contributing to the luminescence of Na8Al6Si6O24(Cl,S)2 hackmanite using thermoluminescence. The glow curves were measured at a heating rate of 5 K/s on hackmanite irradiated with X-rays. The physical parameters of the electron-trapping levels were evaluated by analyzing them using the deconvolution, peak shape, and initial rise methods. The Na8Al6Si6O24(Cl,S)2 hackmanite had at least five trapping levels, with activation energies of 0.78, 1.12, 1.86, 1.26, and 1.18 eV and corresponding peak trap lifetimes of 3.59, 2.71, 1.47, 3.34, and 3.91 s, respectively. The estimated migration time was 15.0 s. [ABSTRACT FROM AUTHOR]

In this paper, a series of K5La1-x(MoO4)4: xSm3+ and K5La0.86(MoO4)4: 0.07Sm3+, 0.07Ln3+ (Ln = Sc, Y or Gd) red phosphors were prepared by calcining the mixed raw powders at 600 °C. Meanwhile, the composition and fluorescence properties of the phosphors, especially for the thermal stability, were analyzed in detail. The results indicate that the K5La1-x(MoO4)4: xSm3+ phosphors can be effectively excited at 401 nm and emit red light with three main peaks at 561 nm, 600 nm and 646 nm, attributed to the 4G5/2→6Hj/2 (j = 5, 7 and 9) energy transitions of the Sm3+ ion respectively, among which the K5La0.93(MoO4)4: 0.07Sm3+ exhibits the highest intensity. The quenching mechanism is ascribed to the dipole-dipole interaction. Ln3+ co-doping does not change the shape and peaking position of the excitation and emission spectra of K5La0.93(MoO4)4: 0.07Sm3+, but further increases the emission intensity in different degrees. Particularly, K5La0.86(MoO4)4: 0.07Sm3+, 0.07Gd3+ demonstrates a high quantum efficiency of 74.63%, a low color temperature (1753 K), and a high color purity of up to 99.97%. It is worth noting that all the phosphors have a good thermal stability, even a zero quenching phenomenon occurs, attributed to the electron traps confirmed by the TL spectrum. [ABSTRACT FROM AUTHOR]

This study aimed to propose a silicon-on-insulator (SOI)-based charge-trapping synaptic transistor with engineered tunnel barriers using high-k dielectrics for artificial synapse electronics capable of operating at high temperatures. The transistor employed sequential electron trapping and de-trapping in the charge storage medium, facilitating gradual modulation of the silicon channel conductance. The engineered tunnel barrier structure (SiO2/Si3N4/SiO2), coupled with the high-k charge-trapping layer of HfO2 and high-k blocking layer of Al2O3, enabled reliable long-term potentiation/depression behaviors within a short gate stimulus time (100 μs), even under elevated temperatures (75 and 125 °C). Conductance variability was determined by the number of gate stimuli reflected in the maximum excitatory postsynaptic current (EPSC) and the residual EPSC ratio. Moreover, we analyzed the Arrhenius relationship between the EPSC as a function of the gate pulse number (N = 1–100) and the measured temperatures (25, 75, and 125 °C), allowing us to deduce the charge trap activation energy. A learning simulation was performed to assess the pattern recognition capabilities of the neuromorphic computing system using the modified National Institute of Standards and Technology datasheets. This study demonstrates high-reliability silicon channel conductance modulation and proposes in-memory computing capabilities for artificial neural networks using SOI-based charge-trapping synaptic transistors. [ABSTRACT FROM AUTHOR]

Our investigation focused on assessing the influence of the metamorphic buffer in metamorphic high-electron-mobility transistors (MHEMT) that were grown on GaAs substrates. While an MHEMT exhibited elevated off-state current levels, its direct current (DC) and radio frequency (RF) traits were found to be comparable to those of InP-based lattice-matched high-electron-mobility transistors (LM-HEMTs). However, the Pulsed I–V measurement results confirmed the presence of the fast transient charging effect, leading to a more substantial degradation in drain current observed in MHEMT. In addition, through the low-frequency noise characteristics, it was confirmed that the dominant trapping location was located in the bulk site. The slope of the 1/f noise measurement indicated that the primary trapping site was in proximity to the bulk traps. The carrier-number-fluctuation (CNF) model was employed to extract the bulk trap density (Nt). For the LM-HEMTs, the value was at 3.27 × 1016 eV−1·cm−3, while for the MHEMT, it was 3.56 × 1017 eV−1·cm−3. [ABSTRACT FROM AUTHOR]

In this work, the effects of total dose irradiation on the parasitic bipolar junction transistor (BTJ) in 130 nm PDSOI MOSFETs were investigated. The experimental results demonstrate that irradiation-induced oxide-trap charges can modify the E-B junction barrier, and thereby make the common-emitter gain β 0 of the parasitic BJT in NMOS device increase, while decreasing it in a PMOS device. Additionally, irradiation-generated oxide-trap charges in shallow trench isolation (STI) elevate the surface electrostatic potential of the gate above the STI sidewall, thus providing an additional channel from the emitter to the collector. Moreover, these charges may generate parasitic reverse conductive paths at the STI/Si interface under high dose irradiation, thereby enhancing the leakage current in the front gate channel and diminishing the significance of the parasitic BJT. Under irradiation, the electric field intensity difference between two biases leads to higher β 0 of the parasitic BJT in PG-biased devices than in ON-biased ones. Furthermore, the lifting effect of irradiation on β 0 increases in wide or short channel irradiated devices, which can be explained using simulations and an emitter current crowding effect model. [ABSTRACT FROM AUTHOR]

Silicon nitride films are widely used as the charge storage layer of charge trap flash (CTF) devices due to their high charge trap densities. The nature of the charge trapping sites in these materials responsible for the memory effect in CTF devices is still unclear. Most prominently, the Si dangling bond or K-center has been identified as an amphoteric trap center. Nevertheless, experiments have shown that these dangling bonds only make up a small portion of the total density of electrical active defects, motivating the search for other charge trapping sites. Here, we use a machine-learned force field to create model structures of amorphous Si 3 N 4 by simulating a melt-and-quench procedure with a molecular dynamics algorithm. Subsequently, we employ density functional theory in conjunction with a hybrid functional to investigate the structural properties and electronic states of our model structures. We show that electrons and holes can localize near over- and under-coordinated atoms, thereby introducing defect states in the band gap after structural relaxation. We analyze these trapping sites within a nonradiative multi-phonon model by calculating relaxation energies and thermodynamic charge transition levels. The resulting defect parameters are used to model the potential energy curves of the defect systems in different charge states and to extract the classical energy barrier for charge transfer. The high energy barriers for charge emission compared to the vanishing barriers for charge capture at the defect sites show that intrinsic electron traps can contribute to the memory effect in charge trap flash devices. [ABSTRACT FROM AUTHOR]

In this investigation, we explore the existence and intriguing features of matter-wave smooth positons in a non-autonomous one-dimensional Bose–Einstein condensate (BEC) system with attractive interatomic interactions. We focus on the Gross–Pitaevskii (GP) equation/nonlinear Schrödinger-type equation with time-modulated nonlinearity and trap potential, which govern nonlinear wave propagation in the BEC. Our approach involves constructing second- and third-order matter-wave smooth positons using a similarity transformation technique. We also identify the constraints on the time-modulated system parameters that give rise to these nonlinear localized profiles. This study considers three distinct forms of modulated nonlinearities: (i) kink-like, (ii) localized or sech-like, and (iii) periodic. By varying the parameters associated with the nonlinearity strengths, we observe a rich variety of captivating behaviors in the matter-wave smooth positon profiles. These behaviors include stretching, curving, oscillating, breathing, collapsing, amplification, and suppression. Our comprehensive studies shed light on the intricate density profile of matter-wave smooth positons in BECs, providing valuable insights into their controllable behavior and characteristics in the presence of time-modulated nonlinearity and trap potential effects. [ABSTRACT FROM AUTHOR]

By combining capacitance–voltage measurements, TCAD simulations, and X-ray photoelectron spectroscopy, the impact of the work function of the gate metals Ti, Mo, Pd, and Ni on the defects in bulk HfO2 and at the HfO2/InGaAs interfaces are studied. The oxidation at Ti/HfO2 is found to create the highest density of interface and border traps, while a stable interface at the Mo/HfO2 interface leads to the smallest density of traps in our sample. The extracted values of Dit of 1.27 × 1011 eV−1cm−2 for acceptor-like traps and 3.81 × 1011 eV−1cm−2 for donor-like traps are the lowest reported to date. The density and lifetimes of border traps in HfO2 are examined using the Heiman function and strongly affect the hysteresis of capacitance–voltage curves. The results help systematically guide the choice of gate metal for InGaAs. [ABSTRACT FROM AUTHOR]

A systematic study of epi-AlGaN/GaN on a SiC substrate was conducted through a comprehensive analysis of material properties and device performance. In this novel epitaxial design, an AlGaN/GaN channel layer was grown directly on the AlN nucleation layer, without the conventional doped thick buffer layer. Compared to the conventional epi-structures on the SiC and Si substrates, the non-buffer epi-AlGaN/GaN structure had a better crystalline quality and surface morphology, with reliable control of growth stress. Hall measurements showed that the novel structure exhibited comparable transport properties to the conventional epi-structure on the SiC substrate, regardless of the buffer layer. Furthermore, almost unchanged carrier distribution from room temperature to 150 °C indicated excellent two-dimensional electron gas (2DEG) confinement due to the pulling effect of the conduction band from the nucleation layer as a back-barrier. High-performance depletion-mode MIS-HEMTs were demonstrated with on-resistance of 5.84 Ω·mm and an output current of 1002 mA/mm. The dynamic characteristics showed a much smaller decrease in the saturation current (only ~7%), with a quiescent drain bias of 40 V, which was strong evidence of less electron trapping owing to the high-quality non-buffer AlGaN/GaN epitaxial growth. [ABSTRACT FROM AUTHOR]

A series of long-afterglow luminescent materials (SrAl2O4: Eu2+ (SAOE), SrAl2O4: Eu2+, Dy3+ (SAOED) and SrAl2O4: Eu2+, Dy3+, Gd3+ (SAOEDG)) was synthesized via the combustion method. Temperature and concentration control experiments were conducted on these materials to determine the optimal reaction temperature and ion doping concentration for each sample. The crystal structure and luminescent properties were analyzed via X-ray diffraction (XRD), photoluminescence (PL), and afterglow attenuation curves. The outcomes demonstrate that the kind of crystal structure and the location of the emission peak were unaffected by the addition of ions. The addition of Eu2+ to the matrix's lattice caused a broad green emission with a central wavelength of 508 nm, which was attributed to the characteristic 4f65d1 to 4f7 electronic dipole, which allowed the transition of Eu2+ ions. While acting as sensitizers, Dy3+ and Gd3+ could produce holes to create a trap energy level, which served as an electron trap center to catch some of the electrons produced by the excitation of Eu2+ but did not itself emit light. After excitation ceased, this allowed them to gently transition to the ground state to produce long-afterglow luminescence. It was observed that with the addition of sensitizer ions, the luminous intensity of the sample increased, and the afterglow duration lengthened. The elemental structure and valence states of the doped ions were determined with an X-ray photoelectron spectrometer (XPS). Scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDX) were used to characterize the samples. The results show that the sample was synthesized successfully, and the type and content of ions in the fluorescent powder could be determined. The fluorescence lifetime, quantum yield, bandgap value, afterglow decay time, and coordinate position in the coherent infrared energy (CIE) diagram of the three best sample groups were then analyzed and compared. Combining the prepared phosphor with ink provides a new idea and method for the field of anti-counterfeiting through screen printing. [ABSTRACT FROM AUTHOR]

Spatial and temporal variation in the diversity of ants in four urban fragments of the tropical dry forest in the city of Santa Marta was evaluated. The fragments were sampled four times in the dry and rainy season, from October 2019 to January 2020, using pitfall traps, mini-Winkler bags, baits, and manual collection. Both alpha and beta taxonomic diversity and their components were quantified. The functional groups were established based on proposals for Neotropical ant species. A total of 7 subfamilies, 37 genera, and 84 species were collected. Richness varied spatially from 33 to 61 species, but between the two seasons it was 72 and 76 species. Sites N01 and N02 had greater diversity than N03 and N04. In all the fragments, soil ants were dominated by Ectatomma ruidum, but litter ants showed a structure with less dominant species. The dissimilarity between fragments was 60–80%, attributable mainly to turnover (50–70%) but not to nestedness (10%). Seventeen functional groups were identified. Taxonomic diversity of ants in urban fragments in Santa Marta showed marked spatial variation, without influence from the seasons. Despite taxonomic turnover, there was broad similarity in functional groups between the fragments, indicating ecological equivalence of species between the ant assemblages. [ABSTRACT FROM AUTHOR]

Spectroscopic and thermoactivation methods were used to study the processes of accumulation of electron and hole trapping centers and energy transfer of electronic excitations to impurities in C a S O 4 - M n and B a S O 4 - M n . It is shown that electronic trapping centers are created during the excitation of an anionic complex as a result of charge transfer from O 2 − → S O 4 2 − to closely spaced anionic complexes S O 4 2 − in C a S O 4 and B a S O 4 . In C a S O 4 and B a S O 4 , energy transfer from the host to impurities occurs at the moment of charge transfer from the excited anionic complex to the combined radiative electronic state at 2.95–3.1 eV. This combined state is formed from electronic trapping centers M n + - S O 4 − and S O 4 3 − - S O 4 − . It was found that the emerging combined radiative states at 2.95–3.1 eV of sulfates, which are formed as a result of charge transfer from the excited anionic complexes to the excited state of impurities, T l + , C u + , a n d   M n 2 + , occupy the same energy levels as the intrinsic electronic trapping center S O 4 3 − of the host at 2.95–3.17 eV. Experimental results show that during UV photon irradiation, anionic complexes are excited mainly near impurities in sulfates. [ABSTRACT FROM AUTHOR]

Fe-BiOCl-Vo nanosheets with electron-capture centers of doped Fe and surface oxygen vacancies (Vo) for enhanced photocatalytic-Fenton performances were conducted. Compared with pristine BiOCl nanosheets, the band gap of the resulting Fe-BiOCl-Vo nanosheets was narrowed, and defective bands were introduced due to the Fe doping and Vo. Furthermore, the integrated electron trapping effect of Vo and doped Fe can efficiently drive charge transfer and separation. As a result, the photocatalytic-Fenton performances of phenol over Fe-BiOCl-Vo nanosheets were enhanced. The photocatalytic-Fenton performances of Fe-BiOCl-Vo nanosheets were enhanced two-fold and four-fold, respectively, as compared with the photocatalytic performances of Fe-BiOCl-Vo and pristine BiOCl nanosheets. During the photocatalytic-Fenton process, the multiple reactive species referring holes (h+), superoxide radicals (●O2−), and hydroxyl radicals (●OH) induced by the efficiently separated charge carriers and Fenton reaction played synergetic roles in phenol degradation and mineralization. This work provides a sophisticated structure design of catalysts for efficient charge transfer and separation, promoting photocatalytic-Fenton performance. [ABSTRACT FROM AUTHOR]

The results of experimental studies of ohmic conductivity degradation in the ensembles of nanostructured anatase bridges under a long-term effect of direct current are presented. Stochastic sets of partially conducting inter-electrode bridges consisting of close-packed anatase nanoparticles were formed by means of the seeding particles from drying aqueous suspensions on the surfaces of silica substrates with interdigital platinum electrodes. Multiple-run experiments conducted at room temperature have shown that ohmic conductivity degradation in these systems is irreversible. It is presumably due to the accumulated capture of conduction electrons by deep traps in anatase nanoparticles. The scaling analysis of voltage drops across the samples at the final stage of degradation gives a critical exponent for ohmic conductivity as ≈1.597. This value satisfactorily agrees with the reported model data for percolation systems. At an early stage of degradation, the spectral density of conduction current fluctuations observed within the frequency range of 0.01–1 Hz decreases approximately as 1 / ω , while near the percolation threshold, the decreasing trend changes to ≈ 1 / ω 2 . This transition is interpreted in terms of the increasing contribution of blockages and subsequent avalanche-like breakdowns of part of the local conduction channels in the bridges into electron transport near the percolation threshold. [ABSTRACT FROM AUTHOR]

Antimicrobial resistance poses a significant threat to global health, amplified by factors such as water scarcity and suboptimal hygienic practices. Addressing AMR effectively necessitates a comprehensive strategy encompassing enhanced access to potable water, developing innovative antibiotics, and exploring alternative treatment modalities, such as harnessing solar photocatalysis with zinc oxide nanoparticles for water purification and antimicrobial applications. The Laser-Assisted Chemical Bath Synthesis (LACBS) technique facilitates the fabrication of pure ZnO nanostructures, providing a potentially efficacious solution for mitigating pathogen proliferation and managing wastewater. The photocatalytic degradation of MB and MO dyes was investigated using blue laser light at 445 nm, and degradation rates were determined accordingly. Ag-doped ZnO nanostructures were characterized through X-ray diffraction, field emission scanning electron microscopy, energy dispersive X-ray spectroscopy, and Fourier-transform infrared spectroscopy. The antimicrobial efficacy of LACBS-synthesized ZnO nanoparticles was assessed against C. albicans, S. aureus, B. subtilis, E. coli, and K. pneumoniae using the disc diffusion method, revealing 40 mm, 37 mm, 21 mm, 27 mm, and 45 mm inhibition zones at the highest concentration of doped-Ag (4.5%), respectively. These inhibition zones were measured in accordance with the guidelines established by the Clinical and Laboratory Standards Institute. X-ray diffraction patterns for ZnO, ZnOAg(1.5%), ZnO:Ag(3%), and ZnO:Ag(4.5%) samples revealed variations in intensity and crystallinity. Scanning electron microscopy exposed morphological disparities among the nanostructures, while energy-dispersive X-ray spectroscopy verified their elemental compositions. UV-Vis absorption analyses inspected the optical band gaps, and Fourier-transform infrared spectra identified the stretching mode of metal-oxygen bonds. Under blue laser irradiation, Ag-doped ZnO exhibited enhanced photocatalytic activity during the photocatalytic degradation. These nanoparticles, synthesized via the cost-effective and straightforward LACBS method, benefit from silver doping that augments their electron-trapping properties and photocatalytic activity, thereby enabling efficient dye degradation. Consequently, Ag-doped ZnO nanoparticles hold promise as a potent solution for counteracting drug-resistant microorganisms and as an effective disinfectant. [ABSTRACT FROM AUTHOR]

In this article, an experimental study on the gate-induced drain leakage (GIDL) current repairing worst hot carrier degradation (HCD) in Si p-FinFETs is investigated with the aid of an ultra-fast measurement (UFM) technique (~30 μs). It is found that increasing GIDL bias from 3 V to 4 V achieves a 114.7% VT recovery ratio from HCD. This over-repair phenomenon of HCD by UFM GIDL is deeply discussed through oxide trap behaviors. When the applied gate-to-drain GIDL bias reaches 4 V, a significant electron trapping and interface trap generation of the fresh device with GIDL repair is observed, which greatly contributes to the approximate 114.7% over-repair VT ratio of the device under worst HCD stress (−2.0 V, 200 s). Based on the TCAD simulation results, the increase in the vertical electric field on the surface of the channel oxide layer is the direct cause of an extraordinary electron trapping effect accompanied by the over-repair phenomenon. Under a high positive electric field, a part of channel electrons is captured by oxide traps in the gate dielectric, leading to further VT recovery. Through the discharge-based multi-pulse (DMP) technique, the energy distribution of oxide traps after GIDL recovery is obtained. It is found that over-repair results in a 34% increment in oxide traps around the conduction energy band (Ec) of silicon, which corresponds to a higher stabilized VT shift under multi-cycle HCD-GIDL tests. The results provide a trap-based understanding of the transistor repairing technique, which could provide guidance for the reliable long-term operation of ICs. [ABSTRACT FROM AUTHOR]

The electrical and optoelectronic performance of semiconductor devices are mainly affected by the presence of defects or crystal imperfections in the semiconductor. Oxygen vacancies are one of the most common defects and are known to serve as electron trap sites whose energy levels are below the conduction band (CB) edge for metal oxide semiconductors, including β-Ga2O3. In this study, the effects of plasma nitridation (PN) on polycrystalline β-Ga2O3 thin films are discussed. In detail, the electrical and optical properties of polycrystalline β-Ga2O3 thin films are compared at different PN treatment times. The results show that PN treatment on polycrystalline β-Ga2O3 thin films effectively diminish the electron trap sites. This PN treatment technology could improve the device performance of both electronics and optoelectronics. [ABSTRACT FROM AUTHOR]

Pd nanoparticles (PdNPs) were successfully deposited on the surface of Fe(III)-modified hydroxyapatite (HAp), which was subsequently used as a photocatalyst for simultaneous photocatalytic H2 evolution and xylose conversion. The structural phase and morphology of the pristine HAp, FeHAp, and Pd@FeHAp were examined using XRD, SEM, and TEM instruments. At 20 °C, Pd@FeHAp provided a greater xylose conversion than pristine HAp and FeHAp, about 2.15 times and 1.41 times, respectively. In addition, lactic acid and formic acid production was increased by using Pd@FeHAp. The optimal condition was further investigated using Pd@FeHAp, which demonstrated around 70% xylose conversion within 60 min at 30 °C. Moreover, only Pd@FeHAp produced H2 under light irradiation. To clarify the impact of Fe(III) doping in FeHAp and heterojunction between PdNPs and FeHAp in the composite relative to pure Hap, the optical and physicochemical properties of Pd@FeHAp samples were analyzed, which revealed the extraordinary ability of the material to separate and transport photogenerated electron-hole pairs, as demonstrated by a substantial reduction in photoluminescence intensity when compared to Hp and FeHAp. In addition, a decrease in electron trap density in the Pd@FeHAp composite using reversed double-beam photoacoustic spectroscopy was attributed to the higher photocatalytic activity rate. Furthermore, the development of new electronic levels by the addition of Fe(III) to the structure of HAp in FeHAp may improve the ability to absorb light by lessening the energy band gap. The photocatalytic performance of the Pd@FeHAp composite was improved by lowering charge recombination and narrowing the energy band gap. As a result, a newly developed Pd@FeHAp composite might be employed as a photocatalyst to generate both alternative H2 energy and high-value chemicals. [ABSTRACT FROM AUTHOR]

Green emitting long afterglow phosphor SrAl2O4: Eu2+, Dy3+ was synthesized via the combustion method. The physical phase analysis was carried out by X-ray diffraction, the results show that the introduction of Eu2+ into the lattice of the matrix resulted in a broad green emission centered at 508 nm, which is ascribed to the characteristic 4f65d1 to 4f7 electronic dipole allowed transition of Eu2+ ions. The doping of Eu2+ and Dy3+ did not change the physical phase of the crystals. Dy3+, as a coactivator, does not emit light itself, but can generate holes to form a trap energy level, which acts as an electron trap center to capture some of the electrons generated by the excitation of Eu2+. After excitation has ceased, let them gradually to transfer to the ground state for long afterglow luminescence. Then, we investigate the optical characterizations of different samples excited by X-ray. We found that SrAl2O4: Eu2+, 0.5% Dy3+ has this higher luminous intensity and afterglow. Its fluorescence lifetime is about 720 ns, and its quantum yield can reach 15.18%. Through search engine marketing (SEM) and energy dispersive X-ray spectroscopy (EDX), it has been proved that the sample has been successfully synthesized and its component content has been confirmed. The Eg value calculated from the diffuse reflectance spectrum is 4.61eV. The prepared SrAl2O4: Eu2+, Dy3+ luminescent powder is combined with Polydimethylsiloxane substrate for anticounterfeiting application, which provides a novel idea and method for the development of the anticounterfeiting field. [ABSTRACT FROM AUTHOR]

The c-axis aligned crystalline indium-gallium-zinc-oxide field-effect transistor (CAAC-IGZO FET), exhibiting an extremely low off-state leakage current (~10−22 A/μm), has promised to be an ideal candidate for Dynamic Random Access Memory (DRAM) applications. However, the instabilities leaded by the drift of the threshold voltage in various stress seriously affect the device application. To better develop high performance CAAC-IGZO FET for DRAM applications, it's essential to uncover the deep physical process of charge transport mechanism in CAAC-IGZO FET. In this work, by combining the first-principles calculations and nonradiative multiphonon theory, the charge trapping and emission properties in CAAC-IGZO FET have been systematically investigated. It is found that under positive bias stress, hydrogen interstitial in Al2O3 gate dielectric is probable effective electron trap center, which has the transition level (ε (+1/−1) = 0.52 eV) above Fermi level. But it has a high capture barrier about 1.4 eV and low capture rate. Under negative bias stress, oxygen vacancy in Al2O3 gate dielectric and CAAC-IGZO active layer are probable effective electron emission centers whose transition level ε (+2/0) distributed at −0.73~−0.98 eV and 0.69 eV below Fermi level. They have a relatively low emission barrier of about 0.5 eV and 0.25 eV and high emission rate. To overcome the instability in CAAC-IGZO FET, some approaches can be taken to control the hydrogen concentration in Al2O3 dielectric layer and the concentration of the oxygen vacancy. This work can help to understand the mechanisms of instability of CAAC-IGZO transistor caused by the charge capture/emission process. [ABSTRACT FROM AUTHOR]

QTAIM and source function analysis were used to explore the non-covalent bonding in twelve different water clusters (H2O)n obtained by considering n = 2–7 and various geometrical arrangements. A total of seventy-seven O−H⋯O hydrogen bonds (HBs) were identified in the systems under consideration, and the examination of the electron density at the bond critical point (BCP) of these HBs revealed the existence of a great diversity of O−H⋯O interactions. Furthermore, the analysis of quantities, such as | V (r) | / G (r) and H (r) , allowed a further description of the nature of analogous O−H⋯O interactions within each cluster. In the case of 2-D cyclic clusters, the HBs are nearly equivalent between them. However, significant differences among the O−H⋯O interactions were observed in 3-D clusters. The assessment of the source function (SF) confirmed these findings. Finally, the ability of SF to decompose the electron density (ρ) into atomic contributions allowed the evaluation of the localized or delocalized character of these contributions to ρ at the BCP associated to the different HBs, revealing that weak O−H⋯O interactions have a significant spread of the atomic contributions, whereas strong interactions have more localized atomic contributions. These observations suggest that the nature of the O−H⋯O hydrogen bond in water clusters is determined by the inductive effects originated by the different spatial arrangements of the water molecules in the studied clusters. [ABSTRACT FROM AUTHOR]

With the extensive application of glass fiber reinforced polymer (GFRP) in the field of high voltage insulation, its operating environment is becoming more and more complex, and the surface insulation failure has gradually become a pivotal problem affecting the safety of equipment. In this paper, nano-SiO2 was fluorinated by Dielectric barrier discharges (DBD) plasma and doped with GFRP to enhance the insulation performance. Through Fourier Transform Ioncyclotron Resonance (FTIR) and X-ray Photoelectron Spectroscopy (XPS) characterization of nano fillers before and after modification, it was found that plasma fluorination can graft a large number of fluorinated groups on the surface of SiO2. The introduction of fluorinated SiO2 (FSiO2) can significantly enhance the interfacial bonding strength of the fiber, matrix and filler in GFRP. The DC surface flashover voltage of modified GFRP was further tested. The results show that both SiO2 and FSiO2 can improve the flashover voltage of GFRP. When the concentration of FSiO2 is 3%, the flashover voltage increases most significantly to 14.71 kV, which is 38.77% higher than that of unmodified GFRP. The charge dissipation test results show that the addition of FSiO2 can inhibit the surface charge migration. By the calculation of Density functional theory (DFT) and charge trap, it is found that grafting fluorine-containing groups on SiO2 can increase its band gap and enhance its electron binding ability. Furthermore, a large number of deep trap levels are introduced into the nanointerface inside GFRP to enhance the inhibition of secondary electron collapse, thus increasing the flashover voltage. [ABSTRACT FROM AUTHOR]

The ethylene propylene diene monomer (EPDM) is utilized in high voltage direct current (HVDC) cable accessories due to its exceptional insulation properties. The microscopic reactions and space charge characteristics of EPDM under electric fields are studied using density functional theory. The results indicate that as the electric field intensity increases, the total energy decreases while the dipole moment and polarizability increase, leading to a decrease in the stability of EPDM. The molecular chain elongates under the stretching effect of the electric field and the stability of the geometric structure decreases, resulting in a decline in its mechanical and electrical properties. With increased electric field intensity, the energy gap of the front orbital decreases, and its conductivity improves. Additionally, the active site of the molecular chain reaction shifts, leading to different degrees of hole trap and electron trap energy level distribution in the area where the front track of the molecular chain is located, making EPDM more susceptible to trapping free electrons or injecting charge. When the electric field intensity reaches 0.0255 a.u., the EPDM molecular structure is destroyed, and its infrared spectrum undergoes significant changes. These findings provide a basis for future modification technology, and theoretical support for high voltage experiments. [ABSTRACT FROM AUTHOR]

Herein, the performance of AlGaN/GaN high-electron-mobility transistor (HEMT) devices fabricated on Si and sapphire substrates is investigated. The drain current of the AlGaN/GaN HEMT fabricated on sapphire and Si substrates improved from 155 and 150 mA/mm to 290 and 232 mA/mm, respectively, at VGS = 0 V after SiO2 passivation. This could be owing to the improvement in the two-dimensional electron gas charge and reduction in electron injection into the surface traps. The SiO2 passivation resulted in the augmentation of breakdown voltage from 245 and 415 V to 400 and 425 V for the AlGaN/GaN HEMTs fabricated on Si and sapphire substrates, respectively, implying the effectiveness of SiO2 passivation. The lower transconductance of the AlGaN/GaN HEMT fabricated on the Si substrate can be ascribed to the higher self-heating effect in Si. The X-ray rocking curve measurements demonstrated that the AlGaN/GaN heterostructures grown on sapphire exhibited a full-width half maximum of 368 arcsec against 703 arcsec for the one grown on Si substrate, implying a better crystalline quality of the AlGaN/GaN heterostructure grown on sapphire. The AlGaN/GaN HEMT fabricated on the sapphire substrate exhibited better performance characteristics than that on the Si substrate, owing to the high crystalline quality and improved surface. [ABSTRACT FROM AUTHOR]

In this study, a flower–like BiVO4/MIL–101–NH2 composite is synthesized by a facile and surfactant–free process. The –COO−–Bi3+ ionic bond construction was conductive to enhance the interface affinity between BiVO4 and MIL–101–NH2. Due to the highly efficient light capture and sufficient electron traps induced by oxygen vacancies and the formation of a heterostructure, the improved separation and transportation rates of charge carriers are realized. In addition, the MIL–101–NH2/BiVO4 composite is favorable for Cr(VI) photocatalytic removal (91.2%). Moreover, FNBV–3 (Fe/Bi = 0.25) also exhibited an excellent reusability after five cycles. [ABSTRACT FROM AUTHOR]

The crude extract of cinnamon (after abbreviated as KM) was used to produce silver nanoparticles (AgKM). This was subsequently utilized for the hydrothermal production of a composite consisting of AgKM decorated on zinc oxide (AgKM/ZnO) as a photocatalyst for reducing hexavalent chromium (Cr(VI)). Several methods e.g., XRD, SEM, TEM, XPS, PL, and RDB-PAS were used to analyze the optical and physicochemical properties of ZnO/AgKM samples in order to better comprehend the impact of the development of the AgKM-ZnO heterojunction in comparison to pure ZnO. In 60 min, the optimized ZnO/AgKM reduced Cr(VI) by more than 98%, with a rate constant 63 times faster than that of pure ZnO. The enhancement of the separation and transportation of photogenerated electron-hole pairs, as proven by a decrease in photoluminescence intensity when compared with ZnO, was attributed to the composite's higher Cr(VI) reduction rate. Also, the formation of a new electronic level was created when AgKM are loaded on the surface of ZnO in the composites, as shown by the energy-resolved distribution of the electron trap (ERDT) pattern resulting to enhancement of light absorption ability by narrowing the energy band gap. Thus, ZnO/AgKM composite's photocatalytic efficacy was enhanced by its narrow energy band gap and reduced charge recombination. Therefore, the newly produced ZnO/AgKM composite can be used as a photocatalyst to purify Cr(VI)-containing wastewater. [ABSTRACT FROM AUTHOR]

Many kinds of defects are present in AlGaN/GaN-on-Si based power electronics devices. Their identification is the first step to understand and improve device performance. Electron traps are investigated in AlGaN/GaN-on-Si power diodes using deep level transient Fourier spectroscopy (DLTFS) at different bias conditions for two Schottky contact's etching recipes. This study reveals seven different traps corresponding to point defects. Their energy level ET ranged from 0.4 eV to 0.57 eV below the conduction band. Among them, two new traps are reported and are etching-related: D3 (ET = 0.47–0.48 eV; σ ≈ 10−15 cm2) and D7 (ET = 0.57 eV; σ = 4.45 × 10−12 cm2). The possible origin of the other traps are discussed with respect to the GaN literature. They are proposed to be related to carbon and nitrogen vacancies or to carbon, such as CN-CGa. Some others are likely due to crystal surface recombination, native defects or a related complex, or to the nitrogen antisite: NGa. [ABSTRACT FROM AUTHOR]

This study fabricated tantalum (Ta)-doped titanium dioxide with a unique nanorod-assembled actinomorphic-flower-like microsphere structured film. The Ta-doped TiO2 actinomorphic-flower-like microsphere (TAFM) was fabricated via the solution immersion method in a Schott bottle with a home-made improvised clamp. The samples were characterised using FESEM, HRTEM, XRD, Raman, XPS, and Hall effect measurements for their structural and electrical properties. Compared to the undoped sample, the rutile-phased TAFM sample had finer nanorods with an average 42 nm diameter assembled to form microsphere-like structures. It also had higher oxygen vacancy sites, electron concentration, and mobility. In addition, a reversed double-beam photoacoustic spectroscopy measurement was performed for TAFM, revealing that the sample had a high electron trap density of up to 2.5 μmolg−1. The TAFM showed promising results when employed as the resistive-type sensing film for a humidity sensor, with the highest sensor response of 53,909% obtained at 3 at.% Ta doping. Adding rGO to 3 at.% TAFM further improved the sensor response to 232,152%. [ABSTRACT FROM AUTHOR]

We showed two demonstrations of the local charge carrier dynamics measurements of photocatalytic materials using our recently developed time-resolved phase-contrast microscopic technique combined with the clustering analyses. In this microscopic time-resolved technique, we observed the charge carrier dynamics via the refractive index change instead of the luminescence or absorption change, where we could often observe non-radiative charge carrier processes such as charge carrier trapping and non-radiative relaxation. By the clustering analyses of all the pixel-by-pixel responses, we could extract various different charge carrier dynamics because photocatalytic materials have inhomogeneity on surfaces and the charge carrier behavior depends on the local structure and species. Even for typical photocatalytic materials, titanium oxide and hematite, we could recognize various charge carrier dynamics, which cannot be differentiated by the general fitting procedure for the averaged time response. We could categorize the surface-trapped charge carriers (holes and electrons) and bulk carriers in the nanosecond to millisecond order, which indicates that this analytical procedure will play an important role in understanding the charge carrier dynamics for various photocatalytic materials. [ABSTRACT FROM AUTHOR]

Deep-red persistent luminescence (PersL) materials have promising applications in fluorescence labeling and tracking. PersL spectral range and PersL duration are considered to be the key factors driving the development of high-performance deep-red PersL materials. To address these two key issues, the performance of PersL materials was continually optimized by doping with cations (Si4+ and Al3+ ions), relying on the material of Li2ZnGe3O8:Cr3+ from the previous work of our group, and a 4.8-fold increase in PersL radiation spectrum intensity and more than twice the PersL duration was achieved (PersL duration up to 47 h). Ultimately, the obtained PersL materials are used to demonstrate their potential use in multi-level anti-counterfeiting, tracking and localization, respectively. This study provides a unique and novel entry point for achieving high-performance PersL materials by optimizing the PersL material host to modulate the electronic structure. [ABSTRACT FROM AUTHOR]