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Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The fabricated TFT on the PEN exhibited excellent performance, including a saturation mobility (μsat) of 7.9 cm2/V·s, an Ion/Ioff ratio of 4.58 × 106, a subthreshold swing (SS) of 0.248 V/dec, a transparency of 87.8% at 550 nm, as well as relatively good stability under negative bias stress (NBS) and bending stress, which shows great potential in smart, portable flexible display, and wearable device applications.

This work focuses on the development of a novel organic&ndash, inorganic photoactive material composited by aggregation-induced emission luminogens (AIE) and CdS. Tetraphenylethene-based AIE (TPE-Ca) is synthesized on CdS to form CdS/TPE-Ca electrode, due to its suitable band structure and potential capability of renewable energy production. The CdS/TPE-Ca electrode presents over three-fold improved photocurrent density and dramatically reduced interfacial resistance, compared with the pure CdS electrode. In addition, the engineering of the band alignment allows the holes to accumulate on the valance band of TPE-Ca, which would partially prevent the CdS from photo-corrosion, thus improving the stability of the sacrificial-free electrolyte photoelectrochemical cell.

In recent years, impurity-doped nanocrystal light-emitting diodes (LEDs) have aroused both academic and industrial interest since they are highly promising to satisfy the increasing demand of display, lighting, and signaling technologies. Compared with undoped counterparts, impurity-doped nanocrystal LEDs have been demonstrated to possess many extraordinary characteristics including enhanced efficiency, increased luminance, reduced voltage, and prolonged stability. In this review, recent state-of-the-art concepts to achieve high-performance impurity-doped nanocrystal LEDs are summarized. Firstly, the fundamental concepts of impurity-doped nanocrystal LEDs are presented. Then, the strategies to enhance the performance of impurity-doped nanocrystal LEDs via both material design and device engineering are introduced. In particular, the emergence of three types of impurity-doped nanocrystal LEDs is comprehensively highlighted, namely impurity-doped colloidal quantum dot LEDs, impurity-doped perovskite LEDs, and impurity-doped colloidal quantum well LEDs. At last, the challenges and the opportunities to further improve the performance of impurity-doped nanocrystal LEDs are described. Published version