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Due to the vulnerability of organic optoelectronic devices to moisture and oxygen, thin-film moisture barriers have played a critical role in improving the lifetime of the devices. Here, we propose a hexagonal boron nitride (hBN) embedded Al 2 O 3 thin film as a flexible moisture barrier. After layer-by-layer (LBL) staking of polymer and hBN flake composite layer, Al 2 O 3 was deposited on the nano-laminate template by spatial plasma atomic layer deposition (PEALD). Because the hBN flakes in Al 2 O 3 thin film increase the diffusion path of moisture, the composite layer has a low water vapor transmission ratio (WVTR) value of 1.8 × 10 -4 g/m 2 day. Furthermore, as embedded hBN flakes restrict crack propagation, the composite film exhibits high mechanical stability in repeated 3 mm bending radius fatigue tests.

We report a novel graphene transfer technique for fabricating graphene field-effect transistors (FETs) that avoids detrimental organic contamination on a graphene surface. Instead of using an organic supporting film like poly(methyl methacrylate) (PMMA) for graphene transfer, Au film is directly deposited on the as-grown graphene substrate. Graphene FETs fabricated using the established organic film transfer method are easily contaminated by organic residues, while Au film protects graphene channels from these contaminants. In addition, this method can also simplify the device fabrication process, as the Au film acts as an electrode. We successfully fabricated graphene FETs with a clean surface and improved electrical properties using this Au-assisted transfer method.

Li-ion batteries (LIBs) employ porous, composite-type electrodes, where few weight percentages of carbonaceous conducting agents and polymeric binders are required to bestow electrodes with electrical conductivity and mechanical robustness. However, the use of such inactive materials has limited enhancements of battery performance in terms of energy density and safety. In this study, we introduced graphene/polyvinylidene fluoride (Gr/PVdF) composites in Ni-rich oxide cathodes for LIBs, replacing conventional conducting agents, carbon black (CB) nanoparticles. By using Gr/PVdF suspensions, we fabricated highly dense LiNi 0.85 Co 0.15 Al 0.05 O 2 (NCA) cathodes having a uniform distribution of conductive Gr sheets without CB nanoparticles, which was confirmed by scanning spreading resistance microscopy mode using atomic force microscopy. At a high content of 99 wt.% NCA, good cycling stability was shown with significantly improved areal capacity (Q areal ) and volumetric capacity (Q vol ), relative to the CB/PVdF-containing NCA electrode with a commercial-level of electrode parameters. The NCA electrodes using 1 wt.% Gr/PVdF (0.9:0.1) delivered a high Q areal of ~3.7 mAh cm -2 (~19% increment) and a high Q vol of ~774 mAh cm -3 (~18% increment) at a current rate of 0.2 C, as compared to the conventional NCA electrode. Our results suggest a viable strategy for superseding conventional conducting agents (CB) and improving the electrochemical performance of Ni-rich cathodes for advanced LIBs., Competing Interests: The authors declare no conflicts of interest.

Flexible transparent conducting electrodes (FTCE) are an essential component of next-generation flexible optoelectronic devices. Graphene is expected to be a promising material for the FTCE, because of its high transparency, large charge carrier mobilities, and outstanding chemical and mechanical stability. However, the electrical conductivity of graphene is still not good enough to be used as the electrode of an FTCE, which hinders its practical application. In this study, graphene was heavily n -type doped while maintaining high transmittance by adsorbing amine-rich macromolecules to graphene. The n -type charge-transfer doping of graphene was maximized by increasing the density of free amine in the macromolecule through a vacuum annealing process. The graphene adsorbed with the n -type dopants was stacked twice, resulting in a graphene FTCE with a sheet resistance of 38 ohm/sq and optical transmittance of 94.1%. The figure of merit (FoM) of the graphene electrode is as high as 158, which is significantly higher than the minimum standard for commercially available transparent electrodes (FoM = 35) as well as graphene electrodes doped with previously reported chemical doping methods. Furthermore, the n -doped graphene electrodes not only show outstanding flexibility but also maintain the doping effect even in high temperature (500 K) and high vacuum (~10 -6 torr) conditions. These results show that the graphene doping proposed in this study is a promising approach for graphene-based next-generation FTCEs.

Twisted bi-layer graphene (tBLG) has attracted much attention because of its unique band structure and properties. The properties of tBLG vary with small differences in the interlayer twist angle, but it is difficult to accurately adjust the interlayer twist angle of tBLG with the conventional fabrication method. In this study, we introduce a facile tBLG fabrication method that directly picks up a single-crystalline graphene layer from a growth substrate and places it on another graphene layer with a pre-designed twist angle. Using this approach, we stacked single-crystalline graphene layers with controlled twist angles and thus fabricated tBLG and twisted multi-layer graphene (tMLG). The structural, optical and electrical properties depending on the twist angle and number of layers, were investigated using transmission electron microscopy (TEM), micro-Raman spectroscopy, and gate-dependent sheet resistance measurements. The obtained results show that the pick and place approach enables the direct dry transfer of the top graphene layer on the as-grown graphene to fabricate uniform tBLG and tMLG with minimal interlayer contamination and pre-defined twist angles.