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This paper is about the development and demonstration of a motor drive for e-transport applications based on an innovative hybrid Si-SiC dual switching frequency interleaved buck–boost Y-inverter and a single-rotor Halbach machine. In particular, the focus is the implementation of the required discontinuous inverter modulation scheme, input voltage feed-forward and motor currents feedback control loops, as well as over-voltage, over-current, and over-temperature protections, using an off-the-shelf commercial hardware platform enabling straightforward Simulink-environment programming of all parts, while ensuring the high switching frequency capability required by wide-band-gap semiconductors. Experimental results showed good inverter efficiency, transient dynamic response to load changes, input voltage regulation, and fully functional protection capability, validating the proposed approach as a powerful option for reducing system development time and cost. [ABSTRACT FROM AUTHOR]

This paper introduces a state-of-the-art inverter–machine codesign methodology for achieving an energy-efficient electric drive system. The methodology is applied in an optimal design case study with the context of the latest trend in the 800 V system. To reduce the voltage rating, a three-level active neutral point clamped topology is utilized in the inverter design, incorporating silicon carbide technology for high-speed operation. This combination allows for efficient power conversion with reduced losses. In the machine design, the increased number of poles that can be achieved in the design phase, along with the utilization of high-speed switching frequencies, enables the development of more efficient machines. Based on the design of the experiment method, by optimizing the parameters of both the inverter and machine simultaneously, using a cosimulation model, the 7.7% of total energy loss during drive cycle operation can be improved. [ABSTRACT FROM AUTHOR]

Circuit breakers (CBs) are the main protection devices for both alternating current (AC) and direct current (DC) power systems, ranging from tens of watts up to megawatts. This paper reviews the current status for solid-state circuit breakers (SSCBs) as well as hybrid circuit breakers (HCBs) with semiconductor power devices. A few novel SSCB and HCB concepts are described in this paper, including advantage and limitation discussions of wide-band-gap (WBG) devices in basic SSCB/HCB configuration by simulation and 360 V/150 A experimental verifications. Novel SSCB/HCB configurations combining ultra-fast switching and high efficiency at normal operation are proposed. Different types of power devices are installed in these circuit breakers to achieve adequate performance. Challenges and future trends of semiconductor power devices in SSCB/HCB with different voltage/power levels and special performance requirements are clarified. [ABSTRACT FROM AUTHOR]

This paper presents an in-depth investigation into the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs comprising of functional as well as structural characterization and the corresponding underlying physical mechanisms responsible for device failure. One aspect of robustness for power MOSFETs is determined by its ability to withstand energy during avalanche breakdown. Avalanche energy (EAV) is an important figure of merit for all applications requiring load dumping and/or to benefit from snubber-less converter design. 2D TCAD electro-thermal simulations were performed to get important insight into the failure mechanism of SiC power MOSFETs during avalanche breakdown. [ABSTRACT FROM AUTHOR]

In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon carbide MOSFET power module. The approach is based on a full circuital representation of the module, where use is made of the thermal equivalent of the Ohm's law. The individual transistors are described with subcircuits, while the dynamic power-temperature feedback is accounted for through an equivalent thermal network enriched with controlled sources enabling nonlinear thermal effects. A synchronous step-up DC-DC converter and a single-phase inverter, both incorporating the aforementioned power module, are simulated. Good accuracy was ensured by considering electromagnetic effects due to parasitics, which were experimentally extracted in a preliminary stage. Low CPU times are needed, and no convergence issues are encountered in spite of the high switching frequencies. The impact of some key parameters is effortlessly quantified. The analysis witnesses the efficiency and versatility of the approach, and suggests its adoption for design, analysis, and synthesis of high-frequency power converters in wide-band-gap semiconductor technology. [ABSTRACT FROM AUTHOR]

This work discusses a novel set of alternate implementations of isolated gate driver circuits for power electronic transistors. The proposed topologies for the driver have been designed specifically for SiC power MOSFET. Three different solutions are discussed, all of them providing the required gate turn-on and turn-off command signal with galvanic isolation, but also supplying power to the secondary side of the driver by means of magnetic transformers. The resulting solutions, all of them implemented with simple circuitry, enable the integration of the driver into the power cell, allowing for theoretical higher power density values in the final system. The principle of operation of the different solutions is discussed, and then the main relevant implementation details are presented. After that, the operation of the circuits is demonstrated experimentally, by testing a set of prototypes of these drivers. This provides a comprehensive design example that assesses the feasibility of the proposed solutions. Finally, the main results of the performance of the three gate drivers, on an SiC MOSFET-based prototype are presented and compared. [ABSTRACT FROM AUTHOR]

With the introduction of the more electric aircraft, there is growing emphasis on improving overall efficiency and thus gravimetric and volumetric power density, as well as smart functionalities and safety of an aircraft. In future on-board power distribution networks, so-called high voltage DC (HVDC, typically +/−270VDC) supplies will be introduced to facilitate distribution and reduce the associated mass and volume, including harness. Future aircraft power distribution systems will also very likely include energy storage devices (probably, batteries) for emergency back up and engine starting. Correspondingly, novel DC-DC conversion solutions are required, which can interface the traditional low voltage (28 V) DC bus with the new 270 V one. Such solutions presently need to cater for a significant degree of flexibility in their power ratings, power transfer capability and number of inputs/outputs. Specifically, multi-port power-scalable bi-directional converters are required. This paper presents the design and testing of such a solution, addressing the use of leading edge wide-band-gap (WBG) solid state technology, especially silicon carbide (SiC), for use as high-frequency switches within the bi-directional converter on the high-voltage side. [ABSTRACT FROM AUTHOR]

Wide-bandgap (WBG) semiconductor devices are making their way into large-volume applications, including pivotal domains of societal infrastructure such as sustainable energy generation and conversion. Presented for a long time mainly as a synonym of high-temperature electronics, hands-on experience has highlighted a number of gains that can be drawn from this technology even when used as a straightforward drop-in substitute of silicon in established applications and field-proven designs. Incremental in nature, these gains enable interesting progress beyond state-of-the-art forms, which, though not corresponding to the full exploitation of the potential of this technology, are oftentimes sufficient to justify its adoption. With particular reference to renewable energy power conversion and solid-state transformation, in the context of transport applications and incorporating a storage device, this paper reports on the understanding generated over the past few years and points out some specifically tailored technology and circuit design requirements to ensure overall beneficial impact of the adoption of WBG technology. [ABSTRACT FROM AUTHOR]