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To achieve higher visible light communication (VLC) traffic capacity, using the wide bandwidth light-emitting diode (LED) and spectral efficiency modulation signal, is currently the most commonly used method. In this demonstration, we apply the orthogonal frequency division multiplexing quadrature amplitude modulation (OFDM-QAM) with bit- and power-loading algorithm on single blue LED to achieve >1 Gbit/s VLC capacity, when a 400 MHz bandwidth avalanche photodiode (APD)-based receiver (Rx) is exploited for decoding. Here, the higher sensitivity APD can be applied to compensate for the wireless VLC link length in the proposed LED VLC system, and due to the lower LED illumination (255 to 40 lux), is used for the indoor access network after passing the wireless link length of 1 to 4 m. As a result, using single blue LED can achieve 0.962 to 1.057 Gbit/s OFDM rate with available 400 MHz bandwidth APD in poorly illuminated condition indoors without applying analogy equalization. [ABSTRACT FROM AUTHOR]

This paper presents an 8 × 8 channel optoelectronic readout array (ORA) realized in the TSMC 180 nm 1P6M RF CMOS process for the applications of short-range light detection and ranging (LiDAR) sensors. We propose several circuit techniques in this work, including an amplitude-to-voltage (A2V) converter that reduces the notorious walk errors by intensity compensation and a time-to-voltage (T2V) converter that acquires the linear slope of the output signals by exploiting a charging circuit, thus extending the input dynamic range significantly from 5 μApp to 1.1 mApp, i.e., 46.8 dB. These results correspond to the maximum detection range of 8.2 m via the action of the A2V converter and the minimum detection range of 56 cm with the aid of the proposed T2V converter. Optical measurements utilizing an 850 nm laser diode confirm that the proposed 8 × 8 ORA with 64 on-chip avalanche photodiodes (APDs) can successfully recover the narrow 5 ns light pulses even at the shortest distance of 56 cm. Hence, this work provides a potential CMOS solution for low-cost, low-power, short-range LiDAR sensors. [ABSTRACT FROM AUTHOR]

This paper presents a novel optoelectronic transimpedance amplifier (OTA) for short-range LiDAR sensors used in 180 nm CMOS technology, which consists of a main transimpedance amplifier (m-TIA) with an on-chip P+/N-well/Deep N-well avalanche photodiode (P+/NW/DNW APD) and a replica TIA with another on-chip APD, not only to acquire circuit symmetry but to also obtain concurrent automatic gain control (AGC) function within a narrow single pulse-width duration. In particular, for concurrent AGC operations, 3-bit PMOS switches with series resistors are added in parallel with the passive feedback resistor in the m-TIA. Then, the PMOS switches can be turned on or off in accordance with the DC output voltage amplitudes of the replica TIA. The post-layout simulations reveal that the OTA extends the dynamic range up to 74.8 dB (i.e., 1 µApp~5.5 mApp) and achieves a 67 dBΩ transimpedance gain, an 830 MHz bandwidth, a 16 pA/ √ Hz noise current spectral density, a −31 dBm optical sensitivity for a 10−12 bit error rate, and a 6 mW power dissipation from a single 1.8 V supply. The chip occupies a core area of 200 × 120 µm2. [ABSTRACT FROM AUTHOR]

This paper presents a novel power-efficient topology for receivers in short-range LiDAR sensors. Conventionally, LiDAR sensors exploit complex time-to-digital converters (TDCs) for time-of-flight (ToF) distance measurements, thereby frequently leading to intricate circuit designs and persistent walk error issues. However, this work features a fully differential trans-impedance amplifier with on-chip avalanche photodiodes as optical detectors so that the need of the following post-amplifiers and output buffers can be eliminated, thus considerably reducing power consumption. Also, the combination of amplitude-to-voltage (A2V) and time-to-voltage (T2V) converters are exploited to replace the complicated TDC circuit. The A2V converter efficiently processes weak input photocurrents ranging from 1 to 50 μApp which corresponds to a maximum distance of 22.8 m, while the T2V converter handles relatively larger photocurrents from 40 μApp to 5.8 mApp for distances as short as 30 cm. The post-layout simulations confirm that the proposed LiDAR receiver can detect optical pulses over the range of 0.3 to 22.8 m with a low power dissipation of 10 mW from a single 1.8 V supply. This topology offers significant improvements in simplifying the receiver design and reducing the power consumption, providing a more efficient and accurate solution that is highly suitable for short-range LiDAR sensor applications. [ABSTRACT FROM AUTHOR]

APD (auditory processing disorders) is defined as difficulties in processing auditory stimuli within the central nervous system, with normative physical hearing and intellectual disabilities excluded. The scale of this phenomenon among children and adolescents and the need to raise awareness of its occurrence prompted the authors to review currently available diagnostic and therapeutic methods, as well as outline future directions for addressing children affected by APD. [ABSTRACT FROM AUTHOR]

This paper presents an inverter-based active feedback transimpedance amplifier (IAF-TIA), in which an active feedback is applied to a voltage-mode inverter-based TIA, and therefore, the controlled positive regeneration process enables the proposed IAF-TIA to achieve the limiting operations for input currents greater than 100 μApp. However, the active inverter feedback mechanism might be prone to instability, hence mandating a very careful optimization of the loop gain. For this purpose, a diode-connected NMOS transistor is employed as a switch in the feedback path with its gate connected to the input, which helps not only to mitigate the corresponding issue but also to accommodate large input currents up to 1.5 mApp. The proposed IAF-TIA implemented in a standard 180 nm CMOS process demonstrates a 70.5 dBΩ transimpedance gain, 1.21 GHz bandwidth, 4.3   pA / Hz noise current spectral density, 63.5 dB input dynamic range, and 23.6 mW power dissipation from a single 1.8 V supply. The chip core occupies an area of 180 × 50 μm2, including an on-chip P+/N-well/Deep N-well avalanche photodiode as an optical detector. [ABSTRACT FROM AUTHOR]

To gain a deeper understanding of the hotly contested topic of the non-thermal biological effects of microwaves, new metrics and methodologies need to be adopted. The direction proposed in the current work, which includes peak exposure analysis and not just time-averaged analysis, aligns well with this objective. The proposed methodology is not intended to facilitate a comparison of the general characteristics between 4G and 5G mobile communication signals. Instead, its purpose is to provide a means for analyzing specific real-life exposure conditions that may vary based on multiple parameters. A differentiation based on amplitude-time features of the 4G versus 5G signals is followed, with the aim of describing the peculiarities of a user's exposure when he runs four types of mobile applications on his mobile phone on either of the two mobile networks. To achieve the goals, we used signal and spectrum analyzers with adequate real-time analysis bandwidths and statistical descriptions provided by the amplitude probability density (APD) function, the complementary cumulative distribution function (CCDF), channel power measurements, and recorded spectrogram databases. We compared the exposimetric descriptors of emissions specific to file download, file upload, Internet video streaming, and video call usage in both 4G and 5G networks based on the specific modulation and coding schemes. The highest and lowest electric field strengths measured in the air at a 10 cm distance from the phone during emissions are indicated. The power distribution functions with the highest prevalence are highlighted and commented on. Afterwards, the capability of a convolutional neural network that belongs to the family of single-shot detectors is proven to recognize and classify the emissions with a very high degree of accuracy, enabling traceability of the dynamics of human exposure. [ABSTRACT FROM AUTHOR]

Conventional designs of an avalanche photodiode (APD) have been based on a planar p–n junction since the 1960s. APD developments have been driven by the necessity to provide a uniform electric field over the active junction area and to prevent edge breakdown by special measures. Most modern silicon photomultipliers (SiPM) are designed as an array of Geiger-mode APD cells based on planar p–n junctions. However, the planar design faces an inherent trade-off between photon detection efficiency and dynamic range due to loss of an active area at the cell edges. Non-planar designs of APDs and SiPMs have also been known since the development of spherical APDs (1968), metal-resistor-semiconductor APDs (1989), and micro-well APDs (2005). The recent development of tip avalanche photodiodes (2020) based on the spherical p–n junction eliminates the trade-off, outperforms the planar SiPMs in the photon detection efficiency, and opens new opportunities for SiPM improvements. Furthermore, the latest developments in APDs based on electric field-line crowding and charge-focusing topology with quasi-spherical p–n junctions (2019–2023) show promising functionality in linear and Geiger operating modes. This paper presents an overview of designs and performances of non-planar APDs and SiPMs. [ABSTRACT FROM AUTHOR]

This paper reports the implementation of two critical technologies used in light detection and ranging for space applications: (1) a microchip Q-switched laser breadboard; (2) a breadboard of an indium gallium arsenide avalanche photodiode working at 292 K with high reverse polarization voltages. Microchip Q-switched lasers are small solid-state back-pumped lasers that can generate high-energy short pulses. The implemented breadboard used an erbium and ytterbium co-doped phosphate glass, a Co:Spinel crystal with 98% initial transparency, and an output coupler with 98% reflectivity. For the sensor test, a system for simultaneous operation in vacuum and a wide range of temperatures was developed. Avalanche photodiodes are reverse-polarized photodiodes with high internal gain due to their multiple layer composition, capable of building up high values of photocurrent from small optical signals by exploiting the avalanche breakdown effects. The test avalanche photodetector was assembled to be operated in two modes: linear and Geiger mode. The produced photocurrent was measured by using: (1) a passive quenching circuit; (2) a transimpedance amplifier circuit. These two technologies are important for mobile light detection and ranging applications due to their low mass and high efficiencies. The paper describes the breadboard's implementation methods and sensor characterization at low and room temperatures with high bias voltages (beyond breakdown voltage). [ABSTRACT FROM AUTHOR]

Auditory discrimination, the hearing ability crucial for speech and language development, allowing one to perceive changes in volume, duration and frequency of sounds, was assessed for 366 participants with normal peripheral hearing: 220 participants with auditory processing disorders (APD) and 146 typically developing (TD) children, all aged 6–9 years. Discrimination of speech was tested with nonsense words using the phoneme discrimination test (PDT), while pure tones—with the frequency pattern test (FPT). The obtained results were statistically analyzed and correlated. The median of the FPT results obtained by participants with APD was more than twice lower than those of TD (20% vs. 50%; p < 0.05), similarly in the PDT (21 vs. 24; p < 0.05). The FPT results of 9-year-old APD participants were worse than the results of TD 6-year-olds (30% vs. 40%; p < 0.05), indicating that the significant FPT deficit strongly suggests APD. The process of auditory discrimination development does not complete with the acquisition of phonemes but continues during school age. Physiological phonemes discrimination is not yet equalized among 9-year-olds. Nonsense word tests allow for reliable testing of phoneme discrimination. APD children require testing with PDT and FPT because both test results allow for developing individual therapeutic programs. [ABSTRACT FROM AUTHOR]

Low-Gain Avalanche Diodes (LGAD) are a class of silicon sensors developed for the fast detection of Minimum Ionizing Particles (MIPs). The development was motivated by the need of resolving piled-up tracks of charged particles emerging from several vertexes originating from the same bunch-crossing in High-Energy Physics (HEP) collider experiments, which, however, are separated not only in space but also in time by a few tens of picoseconds. Built on thin silicon substrates and featuring an internal moderate gain, they provide fast signals for excellent timing performance, which are therefore useful to distinguish the different tracks. Unfortunately, this comes at the price of poor spatial resolution. To overcome this limitation, other families of LGAD-based silicon sensors which can deliver in the same substrate both excellent timing and spatial information are under development. Such devices are, to name a few, capacitively coupled LGADs (AC-LGAD), deep-junction LGADs (DJ-LGAD) and trench-isolated LGADs (TI-LGADs). These devices can be fabricated by even small-scale research-focused clean rooms for faster development within the scientific community. However, to scale up production, efforts towards integrating these sensor concepts in CMOS substrates, with the obvious advantage of the possibility of integrating part of the read-out electronics in the same substrate, have begun. [ABSTRACT FROM AUTHOR]

We report on the design of an attached guard ring (AGR) and a floating guard ring (FGR) in a planar separate absorption, grading, charge, and multiplication In0.53Ga0.47As/InP avalanche photodiode to prevent premature edge breakdowns. The depths of the two Zn diffusions were utilized to manipulate the guard ring structures. Results from TCAD simulation indicate that the optimal AGR diffusion depth is right at the turning point where the breakdown current shifts from the edge of active region to the AGR region. The devices with optimal AGR depth contain significantly higher breakdown voltages than those of devices either with shallower—or without any— AGR. For the FGR design, a series of devices with different spacings between AGR and FGR and different FGR opening widths for diffusion were fabricated and characterized. We show that when the spacing is longer than the critical value, the breakdown voltage can increase ~1.5 V higher than those of the APD devices without FGR. In addition, the wider the FGR opening width, the higher the breakdown voltage. TCAD simulations were also performed to study the effect of FGR, but showed less pronounced improvements, which could be due the discrepancy between the calculated and experimental diffusion profile. [ABSTRACT FROM AUTHOR]

Cardiac calcium alternans is defined as beat-to-beat alternations of Ca transient (CaT) amplitude and has been linked to cardiac arrhythmia, including atrial fibrillation. We investigated the mechanism of atrial alternans in isolated rabbit atrial myocytes using high-resolution line scan confocal Ca imaging. Alternans was induced by increasing the pacing frequency until stable alternans was observed (1.6–2.5 Hz at room temperature). In atrial myocytes, action potential-induced Ca release is initiated in the cell periphery and subsequently propagates towards the cell center by Ca-induced Ca release (CICR) in a Ca wave-like fashion, driven by the newly identified 'fire-diffuse-uptake-fire' (FDUF) mechanism. The development of CaT alternans was accompanied by characteristic changes of the spatio-temporal organization of the CaT. During the later phase of the CaT, central [Ca]i exceeded peripheral [Ca]i that was indicative of a reversal of the subcellular [Ca]i gradient from centripetal to centrifugal. This gradient reversal resulted in a reversal of CICR propagation, causing a secondary Ca release during the large-amplitude alternans CaT, thereby prolonging the CaT, enhancing Ca-release refractoriness and reducing Ca release on the subsequent beat, thus enhancing the degree of CaT alternans. Here, we propose the 'reverse FDUF' mechanism as a novel cellular mechanism of atrial CaT alternans, which explains how the uncoupling of central from peripheral Ca release leads to the reversal of propagating CICR and to alternans. [ABSTRACT FROM AUTHOR]

The Si- and InP-based APDs as the most important weak light semiconductor photodetectors to have achieved commercial success and are widely used in irradiation environments. Investigating the influencing mechanism of neutron irradiation on the above two types of APDs is of scientific and practical importance. In this paper, the dark current and gain characteristics of Si- and InP-based APDs around breakdown voltage were analyzed in detail before and after irradiation. The increase of dark current and the decrease of gain were observed for both the neutron irradiated Si- and InP-based APDs. Generation centers induced by neutrons are responsible for the increased dark current. The decrease of gain can be attributed to the increase of multiplied dark current and the change of electric field distribution in APD. The Si-based APD exhibits soft breakdown with the breakdown voltage reduced by ~8 V under the neutron fluence of 1.0 × 1012 cm−2, while the soft breakdown occurs along with a small change of breakdown voltage of ~1.5 V under the neutron fluence of 1.0 × 1013 cm−2 for InP-based APD. The difference in the change of breakdown voltage probably occurs because the Si-based APD uses p-doped Si as the multiplication layer, in which the neutron induced carrier removing effect cannot be ignored to keep the electric field distribution away from the optimal state. Therefore, using an intrinsic multiplication layer in APD is helpful to improve the neutron radiation resistance. The findings here are not only useful for the radiation hardened design of APD, but also deepen the understanding of irradiation mechanism. [ABSTRACT FROM AUTHOR]

This paper introduces an indoor-monitoring LiDAR sensor for patients with Alzheimer disease residing in long-term care facilities (LTCFs), and this sensor exploits an optoelectronic analog front-end (AFE) to detect light signals from targets by utilizing on-chip avalanche photodiodes (APDs) realized in a 180 nm CMOS process and a neural processing unit (NPU) used for motion detection and decisions, especially for incidents of falls occurring in LTCFs. The AFE consists of an on-chip CMOS P+/N-well APD, a linear-mode transimpedance amplifier, a post-amplifier, and a time-to-digital converter, whereas the NPU exploits network sparsity and approximate processing elements for low-power operation. This work provides a potential solution of low-cost, low-power, indoor-monitoring LiDAR sensors for patients with Alzheimer disease in LTCFs. [ABSTRACT FROM AUTHOR]

The SCN5A mutations have been long associated with long QT variant 3 (LQT3). Recent experimental and computation studies have reported that mexiletine effectively treats LQT3 patients associated with the A1656D mutation. However, they have primarily focused on cellular level evaluations and have only looked at the effects of mexiletine on action potential duration (APD) or QT interval reduction. We further investigated mexiletine's effects on cardiac cells through simulations of single-cell (behavior of alternant occurrence) and 3D (with and without mexiletine). We discovered that mexiletine could shorten the cell's APD and change the alternant's occurrence to a shorter basic cycle length (BCL) between 350 and 420 ms. The alternant also appeared at a normal heart rate under the A1656D mutation. Furthermore, the 3D ventricle simulations revealed that mexiletine could reduce the likelihood of a greater spiral wave breakup in the A1656D mutant condition by minimizing the appearance of rotors. In conclusion, we found that mexiletine could provide extra safety features during therapy for LQT3 patients because it can change the alternant occurrence from a normal to a faster heart rate, and it reduces the chance of a spiral wave breakup. Therefore, these findings emphasize the promising efficacy of mexiletine in treating LQT3 patients under the A1656D mutation. [ABSTRACT FROM AUTHOR]

The physiological importance of NCX in human-induced pluripotent stem cell-derived cardiomyocytes (hiPSC-CMs) is not well characterized but may depend on the relative strength of the current, compared to adult cardiomyocytes, and on the exact spatial arrangement of proteins involved in Ca2+ extrusion. Here, we determined NCX currents and its contribution to action potential and force in hiPSC-CMs cultured in engineered heart tissue (EHT). The results were compared with data from rat and human left ventricular tissue. The NCX currents in hiPSC-CMs were larger than in ventricular cardiomyocytes isolated from human left ventricles (1.3 ± 0.2 pA/pF and 3.2 ± 0.2 pA/pF for human ventricle and EHT, respectively, p < 0.05). SEA0400 (10 µM) markedly shortened the APD90 in EHT (by 26.6 ± 5%, p < 0.05) and, to a lesser extent, in rat ventricular tissue (by 10.7 ± 1.6%, p < 0.05). Shortening in human left ventricular preparations was small and not different from time-matched controls (TMCs; p > 0.05). Force was increased by the NCX block in rat ventricle (by 31 ± 5.4%, p < 0.05) and EHT (by 20.8 ± 3.9%, p < 0.05), but not in human left ventricular preparations. In conclusion, hiPSC-CMs possess NCX currents not smaller than human left ventricular tissue. Robust NCX block-induced APD shortening and inotropy makes EHT an attractive pharmacological model. [ABSTRACT FROM AUTHOR]

This work explores the benefits of linear-mode avalanche photodiodes (APDs) in high-speed CMOS imaging as compared to different approaches present in literature. Analysis of APDs biased below their breakdown voltage employed in single-photon counting mode is also discussed, showing a potentially interesting alternative to existing Geiger-mode APDs. An overview of the recently presented gated pinned avalanche photodiode pixel concept is provided, as well as the first experimental results on a 8×16 pixel test array. Full feasibility of the proposed pixel concept is not demonstrated; however, informative data is obtained from the sensor operating under –32 V substrate bias and clearly exhibiting wavelength-dependent gain in frontside illumination. The readout of the chip designed in standard 130 nm CMOS technology shows no dependence on the high-voltage bias. Readout noise level of 15 e¯ rms, full well capacity of 8000 e¯, and the conversion gain of 75 æV/e¯ are extracted from the photon-transfer measurements. The gain characteristics of the avalanche junction are characterized on separate test diodes showing a multiplication factor of 1.6 for red light in frontside illumination. [ABSTRACT FROM AUTHOR]

Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100-300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. [ABSTRACT FROM AUTHOR]

The Si- and InP-based APDs as the most important weak light semiconductor photodetectors to have achieved commercial success and are widely used in irradiation environments. Investigating the influencing mechanism of neutron irradiation on the above two types of APDs is of scientific and practical importance. In this paper, the dark current and gain characteristics of Si- and InP-based APDs around breakdown voltage were analyzed in detail before and after irradiation. The increase of dark current and the decrease of gain were observed for both the neutron irradiated Si- and InP-based APDs. Generation centers induced by neutrons are responsible for the increased dark current. The decrease of gain can be attributed to the increase of multiplied dark current and the change of electric field distribution in APD. The Si-based APD exhibits soft breakdown with the breakdown voltage reduced by ~8 V under the neutron fluence of 1.0 × 10 12 cm -2 , while the soft breakdown occurs along with a small change of breakdown voltage of ~1.5 V under the neutron fluence of 1.0 × 10 13 cm -2 for InP-based APD. The difference in the change of breakdown voltage probably occurs because the Si-based APD uses p-doped Si as the multiplication layer, in which the neutron induced carrier removing effect cannot be ignored to keep the electric field distribution away from the optimal state. Therefore, using an intrinsic multiplication layer in APD is helpful to improve the neutron radiation resistance. The findings here are not only useful for the radiation hardened design of APD, but also deepen the understanding of irradiation mechanism.

The relationship between the performance of avalanche photodiode (APD) and structural parameters of the absorption, grading, and multiplication layers has been thoroughly simulated and discussed using the equivalent materials approach and Crosslight software. Based on separate absorption, grading, charge, and multiplication (SAGCM) structure, the absorption layer of APD was replaced with InGaAs/GaAsSb superlattice compared to conventional InGaAs/InP SAGCM APD. The results indicated that the breakdown voltage increased with the doping concentration of the absorption layer. When the thickness of the multiplication layer increased from 0.1 μm to 0.6 μm, the linear range of punchthrough voltage increased from 16 V to 48 V, and the breakdown voltage decreased at first and then increased when the multiplication layer reached the critical thickness at 0.35 μm. The grading layer could not only slow down the hole carrier, but also adjust the electric field. The dark current was reduced to about 10 nA and the gain was over 100 when the APD was cooled to 240 K. The response wavelength APD could be extended to 2.8 μm by fine tuning the superlattice parameters. The simulation results indicated that the APD using superlattice materials has potential to achieve a long wavelength response, a high gain, and a low dark current. [ABSTRACT FROM AUTHOR]

In this paper, the sampling current characteristics of the external circuit and the internal mechanism of the current generation in APD irradiated by a millisecond pulse laser were studied. The photocurrent of APD irradiated by a millisecond pulse laser with different energy densities was obtained by the sampling resistance of the external circuit. The photocurrent can be divided into a photocurrent stage, conduction stage and recovery stage in the time domain. This is mainly due to the carrier flow in APD, which leads to the lowering of the barrier between the PN junction. The research results of this paper can be extended to the response of the detector to the high-power infrared pulse laser and provide a certain experimental basis for the design of a millisecond pulse infrared laser detection circuit. [ABSTRACT FROM AUTHOR]

Performance of systems for optical detection depends on the choice of the right detector for the right application. Designers of optical systems for ranging applications can choose from a variety of highly sensitive photodetectors, of which the two most prominent ones are linear mode avalanche photodiodes (LM-APDs or APDs) and Geiger-mode APDs or single-photon avalanche diodes (SPADs). Both achieve high responsivity and fast optical response, while maintaining low noise characteristics, which is crucial in low-light applications such as fluorescence lifetime measurements or high intensity measurements, for example, Light Detection and Ranging (LiDAR), in outdoor scenarios. The signal-to-noise ratio (SNR) of detectors is used as an analytical, scenario-dependent tool to simplify detector choice for optical system designers depending on technologically achievable photodiode parameters. In this article, analytical methods are used to obtain a universal SNR comparison of APDs and SPADs for the first time. Different signal and ambient light power levels are evaluated. The low noise characteristic of a typical SPAD leads to high SNR in scenarios with overall low signal power, but high background illumination can saturate the detector. LM-APDs achieve higher SNR in systems with higher signal and noise power but compromise signals with low power because of the noise characteristic of the diode and its readout electronics. Besides pure differentiation of signal levels without time information, ranging performance in LiDAR with time-dependent signals is discussed for a reference distance of 100 m. This evaluation should support LiDAR system designers in choosing a matching photodiode and allows for further discussion regarding future technological development and multi pixel detector designs in a common framework. [ABSTRACT FROM AUTHOR]