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High-performing superconducting YBa2Cu3O7–x (YBCO) films are fabricated by a chemical solution deposition methodology through novel barium-deficient low-fluorine solutions. The precursor solutions, distinguished for being straightforward, inexpensive and eco-friendly, allow us to reduce the growing temperature of YBCO down to 750 °C. We investigated the influence of the growing temperatures on both the microstructure and superconducting properties of YBCO films by using conventional thermal annealing and flash-heating approaches. A clear correlation between the growing temperature (Tg) and the superconducting performance of the films was obtained with improved performances observed at low Tg. [ABSTRACT FROM AUTHOR]

Memristive devices are attracting a great attention for memory, logic, neural networks, and sensing applications due to their simple structure, high density integration, low-power consumption, and fast operation. In particular, multi-terminal structures controlled by active gates, able to process and manipulate information in parallel, would certainly provide novel concepts for neuromorphic systems. In this way, transistor-based synaptic devices may be designed, where the synaptic weight in the postsynaptic membrane is encoded in a source-drain channel and modified by presynaptic terminals (gates). In this work, we show the potential of reversible field-induced metal-insulator transition (MIT) in strongly correlated metallic oxides for the design of robust and flexible multi-terminal memristive transistor-like devices. We have studied different structures patterned on YBa2Cu3O7−δ films, which are able to display gate modulable non-volatile volume MIT, driven by field-induced oxygen diffusion within the system. The key advantage of these materials is the possibility to homogeneously tune the oxygen diffusion not only in a confined filament or interface, as observed in widely explored binary and complex oxides, but also in the whole material volume. Another important advantage of correlated oxides with respect to devices based on conducting filaments is the significant reduction of cycle-to-cycle and device-to-device variations. In this work, we show several device configurations in which the lateral conduction between a drain-source channel (synaptic weight) is effectively controlled by active gate-tunable volume resistance changes, thus providing the basis for the design of robust and flexible transistor-based artificial synapses. [ABSTRACT FROM AUTHOR]